scholarly journals Toward Enhanced Humidity Stability of Triboelectric Mechanical Sensors via Atomic Layer Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1795
Author(s):  
Wook Kim ◽  
Sumaira Yasmeen ◽  
Chi Thang Nguyen ◽  
Han-Bo-Ram Lee ◽  
Dukhyun Choi

Humid conditions can disrupt the triboelectric signal generation and reduce the accuracy of triboelectric mechanical sensors. This study demonstrates a novel design approach using atomic layer deposition (ALD) to enhance the humidity resistance of triboelectric mechanical sensors. Titanium oxide (TiOx) was deposited on polytetrafluoroethylene (PTFE) film as a moisture passivation layer. To determine the effective ALD process cycle, the TiOx layer was deposited with 100 to 2000 process cycles. The triboelectric behavior and surface chemical bonding states were analyzed before and after moisture exposure. The ALD-TiOx-deposited PTFE showed three times greater humidity stability than pristine PTFE film. Based on the characterization of TiOx on PTFE film, the passivation mechanism was proposed, and it was related to the role of the oxygen-deficient sites in the TiOx layer. This study could provide a novel way to design stable triboelectric mechanical sensors in highly humid environments.

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  

2021 ◽  
Author(s):  
Matthias Marcus Minjauw ◽  
Ji-Yu Feng ◽  
Timo Sajavaara ◽  
Christophe Detavernier ◽  
Jolien Dendooven

In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts...


2017 ◽  
Vol 46 (4) ◽  
pp. 1172-1178 ◽  
Author(s):  
T. Jurca ◽  
A. W. Peters ◽  
A. R. Mouat ◽  
O. K. Farha ◽  
J. T. Hupp ◽  
...  

The synthesis and characterization of molybdenum oxo-amidinate ALD precursors MoO2(R2AMD)2[AMD =N,N′-di-R-acetamidinate; R = Cy (2; cyclohexyl) andiPr (3)] is reported.


Vacuum ◽  
2021 ◽  
pp. 110686
Author(s):  
Soumya Saha ◽  
Gregory Jursich ◽  
Abhijit H. Phakatkar ◽  
Tolou Shokuhfar ◽  
Christos G. Takoudis

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