Effect of the Load Resistance in the Linearity and Sensitivity of MIS Position Sensitive Detectors

2005 ◽  
Vol 862 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
L. Raniero E. Fortunato ◽  
R. Martins
Keyword(s):  
Load Resistance ◽  
Sensor Response ◽  
Electrical Model ◽  
Output Impedance ◽  
Metal Insulator ◽  
Resistive Layer ◽  
Good Compromise ◽  
Maximum Value ◽  
Position Sensitive ◽  
Position Sensitive Detectors

AbstractIt is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose an electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (≤ 500 Ω), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 kΩ in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.

Role of the Oxide Layer on the Performances of a-Si:H Schottky Structures Applied to PDS Fabrication

2006 ◽  
Vol 910 ◽  
Author(s):  
Hugo Aguas ◽  
Luis Pereira ◽  
Daniel Costa ◽  
Leandro Raniero ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Structural Changes ◽  
Diffusion Profile ◽  
Metal Insulator ◽  
Linearity Error ◽  
Position Sensitive ◽  
Position Sensitive Detectors ◽  
532 Nm ◽  
Mis Structures

AbstractIn this work we present results of studies performed on Schottky and MIS (metal-insulator – semiconductor) PSD (position sensitive detectors) structures: substrate (glass)/ Cr (300 nm) / a-Si:H [n] (37 nm) / a-Si:H [i] (600 nm) / SiO2 (1.5 nm – for the MIS) / Au (7 nm). The effect of the interfacial oxide layer between Au and a-Si:H, for the MIS structures, was studied and compared with the Schottky, in order to determine how beneficial it could be for device performances and time degradation. For doing so, the Au thickness of 70Å was deposited by thermal evaporation on an oxide free (Schottky) and oxidized (20Å) (MIS) a-Si:H surfaces. These structures were characterized by SIMS, RBS, SEM and AFM in order to correlate the obtained diffusion profile of Au at the interface and the topography with the presence of the oxide at the interface. The results show that the Au inter-diffuses very easily in the oxide free a-Si:H surface, even at room temperature, degrading the devices performance. On the other hand, the MIS structures, with their interfacial oxide present no structural changes after annealing and the PSD produced are stable. We believe that this effect is associated with the barrier effect of the interfacial oxide that prevents the Au diffusion. The optimized 1D MIS sensors are stable and exhibit a linearity error as low as 0.8 % and sensitivities of 33 mV/cm for a 5 mW spot beam intensity at a wavelength of 532 nm, while the Schottky sensors showed a time degradation of their characteristics.

Role of the Collecting Resistive Layer on the Static Characteristics of 2D a-Si:H thin Film Position Sensitive Detector

1998 ◽  
Vol 507 ◽  
Author(s):  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Analytical Model ◽  
Sensitive Detector ◽  
Static Characteristics ◽  
Resistive Layer ◽  
Position Sensitive ◽  
Predicted Values ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated pin thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

3 dimensional polymorphous silicon based metal-insulator-semiconductor position sensitive detectors

2007 ◽  
Vol 515 (19) ◽  
pp. 7530-7533 ◽  
Author(s):  
H. Águas ◽  
S. Pereira ◽  
D. Costa ◽  
P. Barquinha ◽  
L. Pereira ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
3 Dimensional ◽  
Position Sensitive ◽  
Silicon Based ◽  
Position Sensitive Detectors

Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Steady State ◽  
Detection Limit ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

scholarly journals Comparative study of UV radiation hardness of n+p and p+n duo-lateral position sensitive detectors

2014 ◽  
Vol 68 (2) ◽  
pp. 21301 ◽  
Author(s):  
Omeime Xerviar Esebamen ◽  
Göran Thungström ◽  
Hans-Erik Nilsson ◽  
Anders Lundgren
Keyword(s):  
Comparative Study ◽  
Uv Radiation ◽  
Lateral Position ◽  
Radiation Hardness ◽  
Position Sensitive ◽  
Position Sensitive Detectors

SnSe/SiO2/Si Heterostructures for Ultrahigh-Sensitivity and Broadband Optical Position Sensitive Detectors

2019 ◽  
Vol 40 (1) ◽  
pp. 55-58 ◽  
Author(s):  
Lanzhong Hao ◽  
Hanyang Xu ◽  
Shichang Dong ◽  
Yongjun Du ◽  
Li Luo ◽  
...  
Keyword(s):  
Optical Position ◽  
Ultrahigh Sensitivity ◽  
Position Sensitive ◽  
Position Sensitive Detectors

scholarly journals Electrical Equivalent Circuit of Multi-Tips Pulsed Corona Discharge Reactor

2021 ◽  
Vol 348 ◽  
pp. 01014
Author(s):  
Karim Saber ◽  
Alyen Abahazem ◽  
Nofel Merbahi ◽  
Mohamed Yousfi
Keyword(s):  
Corona Discharge ◽  
Electrical Circuit ◽  
Electrical Model ◽  
Electrical Equivalent Circuit ◽  
Rls Algorithm ◽  
Estimated Parameters ◽  
Maximum Value ◽  
Pulsed Corona ◽  
Discharge Behavior

In this work, an electrical model equivalent to the corona discharge reactor has been proposed in a multitips plan configuration, in dry air at atmospheric pressure. The electrical parameters evolution of the circuit are obtained by using the identification method which is based on the least squares recursive (RLS) algorithm, the estimated parameters allow us to describe the corona discharge behavior inside the reactor. The RLS method used during the determination of capacitance and resistance is validated by the comparison between the measured and the calculated currents, the significant forms of capacitance and resistance confirm the validity of the proposed electrical model. The estimated parameters of the electrical circuit allowed us to determine the discharge power, the power delivered to the reactor and thus the energy efficiency during the discharge, this efficiency increases during the propagation of streamers towards the plane, it reaches a maximum value which is equal to 50% in the case of the fourtips- plane configuration. The energy stored in the reactor is also calculated using the electrical circuit, it increases to a maximum value of 2.6 pJ, which is a very low value compared to the energy delivered to the reactor. This work allows us to control the discharge and lost energy during the corona discharge in the case of multi-tips-plane configuration.

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