Metal Induced Growth of Poly-Si Solar Cells and Silicide Nanowires by use of Multiple Catalyst Layers

2005 ◽  
Vol 862 ◽  
Author(s):  
Joondong Kim ◽  
Chunhai Ji ◽  
Wayne A. Anderson
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Catalyst Layers ◽  
Si Solar Cells ◽  
Sputtering Power ◽  
Growth Method ◽  
Metal Induced Growth ◽  
Sputtering System

AbstractPolycrystalline Si thin films and single NiSi crystalline nanowires were made by the metal induced growth method. The different growth mechanisms for poly-Si and nanowires lie in the metal silicide formation. Poly-Si growth is based on metal disilicide formation and the growth of nanowires depends on metal monosilicide formation. The metal silicide formation depends on catalyst species and sputtering power. Following catalyst coating, Si was deposited in a DC magnetron sputtering system to grow poly-Si or nanowires. Several metals (Ni, Co, Co/Ni and Pd) were used as catalysts to confirm the nanowire growth mechanism as well as to fabricate solar cells. Poly-Si thin films were about 5 μm thick with up to 1 μm crystallite size. Nanowires were up to 10 μm long with about 50 nm diameter.

Additional coating effects on textured ZnO : Al thin films as transparent conducting oxides for thin-film Si solar cells

2011 ◽  
Vol 20 (3) ◽  
pp. 294-297 ◽  
Author(s):  
Taeho Moon ◽  
Jin Hyung Jun ◽  
Hyun Lee ◽  
Wonki Yoon ◽  
Soohyun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Transparent Conducting Oxides ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Si Solar Cells

Spontaneous Growth of Nickel Silicide Nanowires and Formation of Self-Assembled Nanobridges by the Metal Induced Growth Method

2005 ◽  
Vol 872 ◽  
Author(s):  
Joondong Kim ◽  
Wayne A. Anderson ◽  
Young-Joo Song
Keyword(s):  
Low Temperatures ◽  
Nickel Silicide ◽  
Dc Magnetron Sputtering ◽  
Growth Property ◽  
Growth Method ◽  
Self Assembled ◽  
Metal Induced Growth ◽  
Lift Off ◽  
Si Wafer ◽  
Sputtering System

AbstractNickel monosilicide (NiSi) nanowires (NWs) have been fabricated by the metal induced growth (MIG) method. Ni as a catalyst was deposited on a SiO2 coated Si wafer. In a DC magnetron sputtering system, the Ni reacts at 575°C with sputtered Si to give nanowires. Different metal catalysts (Co and Pd) were used to prove the MIG NW growth mechanism. NiSi NWs were a single crystal structure, 20-80 nm in diameter and 1-10 μm in length. The linear NW growth property provided nanobridge formation in a trenched Si wafer. The trenches in a Si wafer were made by dry etching and a simple, conventional metal lift off method. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

Silver Thin Films Deposited by Compact Magnetron Sputtering System

2010 ◽  
Vol 93-94 ◽  
pp. 413-416 ◽  
Author(s):  
N. Promros ◽  
Boonchoat Paosawatyanyong
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Input Power ◽  
Grain Structure ◽  
Plasma Parameters ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Silver Thin Films ◽  
Alloy Magnet ◽  
Sputtering System

A compact dc magnetron sputtering system capable of silver thin films depositions was designed and constructed. The novel small footprint sputtering head with target diameter of 52 mm was constructed utilizing powerful neodymium alloy magnet. Silver metal was sputter-deposited under various powers. Plasma parameters were analyzed by using the sweeping-bias single langmuir probe. The electron temperatures of the plasma glow were constant at approximately 2 eV even with the increasing of input power whereas plasma density increases with the increasing of the input power. The X-ray diffraction analysis (XRD) and scanning electron microscope (SEM) were used to study the crystalline structure and the surface morphology of the obtained silver thin films. Crystalline orientations of (111) and (200) in the silver films deposited on slide glass substrates were revealed from XRD pattern. The highest degrees of (111) and (200) orientations was obtained at the sputtering power between 0.228 and 0.265 Wcm-2. Sub-micron crystalline silver grain structure were observed using SEM micrographs. Facetted grain size and deposition rate of silver thin films increases as the sputtering power increases.

scholarly journals Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 430 ◽  
Author(s):  
Cao Yu ◽  
Shengzhi Xu ◽  
Jianxi Yao ◽  
Shuwei Han
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Global Market ◽  
Crystalline Silicon Solar Cells ◽  
Novel Device ◽  
Si Solar Cells ◽  
Passivation Layers ◽  
Conversion Efficiencies

Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.

scholarly journals Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

Energies ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 402 ◽  
Author(s):  
Yu-Tsu Lee ◽  
Fang-Ru Lin ◽  
Ting-Chun Lin ◽  
Chien-Hsun Chen ◽  
Zingway Pei
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Titanium Oxide ◽  
Tunneling Rate ◽  
Oxide Thin Films ◽  
Si Solar Cells

Comprehensive Investigation on the Nanovoid Heterogeneity in Mo Thin Films Used for Solar Cells Applications

MRS Advances ◽  
2018 ◽  
Vol 3 (39) ◽  
pp. 2323-2329
Author(s):  
Hamda A. Al-Thani ◽  
Falah S. Hasoon
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Solar Cells ◽  
Research Work ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Sputtering Power ◽  
Planar Magnetron ◽  
Pressure Changes ◽  
Sputtering Pressure

ABSTRACTThe purpose of this research work is to gain a better understanding of the nanostructural properties of Molybdenum (Mo) thin films’ porosity, nanovoid heterogeneity and provide detailed quantitative data on voids volume fractions, sizes, shapes, and their preferred orientations as the growth sputtering pressure changes systematically. This knowledge shall assists in optimizing Mo film nano- and micro-structural properties as desired for solar cells applications. Therefore, two separate series of Mo thin films (∼ 0.7 μm thick) were deposited on high purity (99.999) Al-foil (10 μm thick), and Si/SiO2 substrates using direct-current (DC) planar magnetron sputtering. The sputtering pressure was varied from 0.8 mT to 12 mT, with a sputtering power density of 1.2 W/cm2. High-Resolution Scanning Electron Microscopy (HRSEM) was used to examine the Mo films’ morphology. Whereas, the Mo films’ bulk resistivity was calculated from the films’ thickness and average sheet resistance measurements using Dektak Surface Profilometer, and Four Point Probe method, respectively. Small Angle X-Ray Scattering (SAXS) technique was applied to examine the existence of nanovoids and its heterogeneity in the Mo-coated Al foils (Al/Mo). Moreover, the porosity of the Mo films as a function of sputtering pressure was studied by Transmission Electron Microscopy (TEM) on Mo-coated Si/SiO2 (Si/SiO2/Mo) substrates.

Comparison of AZO, GZO, and AGZO Thin Films TCOs Applied for a-Si Solar Cells

2012 ◽  
Vol 159 (6) ◽  
pp. H599-H604 ◽  
Author(s):  
Y. C. Lin ◽  
T. Y. Chen ◽  
L. C. Wang ◽  
S. Y. Lien
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Si Solar Cells
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