Spontaneous Growth of Nickel Silicide Nanowires and Formation of Self-Assembled Nanobridges by the Metal Induced Growth Method

2005 ◽  
Vol 872 ◽  
Author(s):  
Joondong Kim ◽  
Wayne A. Anderson ◽  
Young-Joo Song
Keyword(s):  
Low Temperatures ◽  
Nickel Silicide ◽  
Dc Magnetron Sputtering ◽  
Growth Property ◽  
Growth Method ◽  
Self Assembled ◽  
Metal Induced Growth ◽  
Lift Off ◽  
Si Wafer ◽  
Sputtering System

AbstractNickel monosilicide (NiSi) nanowires (NWs) have been fabricated by the metal induced growth (MIG) method. Ni as a catalyst was deposited on a SiO2 coated Si wafer. In a DC magnetron sputtering system, the Ni reacts at 575°C with sputtered Si to give nanowires. Different metal catalysts (Co and Pd) were used to prove the MIG NW growth mechanism. NiSi NWs were a single crystal structure, 20-80 nm in diameter and 1-10 μm in length. The linear NW growth property provided nanobridge formation in a trenched Si wafer. The trenches in a Si wafer were made by dry etching and a simple, conventional metal lift off method. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

Solid-state growth of nickel silicide nanowire by the metal-induced growth method

2006 ◽  
Vol 21 (11) ◽  
pp. 2936-2940 ◽  
Author(s):  
Joondong Kim ◽  
Jong-Uk Bae ◽  
Wayne A. Anderson ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim
Keyword(s):  
Solid State ◽  
Catalyst Layer ◽  
Nickel Silicide ◽  
Metal Species ◽  
Dominant Factor ◽  
Silicide Layer ◽  
Deposited Metal ◽  
Growth Method ◽  
Metal Induced Growth ◽  
State Growth

Unique nanowire growth was accomplished at 575 °C by the metal-induced growth (MIG) method. This involved a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowires in the solid state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication, and the Ni-induced case was successful in demonstrating that metal species should be the dominant factor for growing nanowires. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer. The practical application of the MIG nanowire was proved by fabricating nanoscale contacts.

Metal Induced Growth of Poly-Si Solar Cells and Silicide Nanowires by use of Multiple Catalyst Layers

2005 ◽  
Vol 862 ◽  
Author(s):  
Joondong Kim ◽  
Chunhai Ji ◽  
Wayne A. Anderson
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Catalyst Layers ◽  
Si Solar Cells ◽  
Sputtering Power ◽  
Growth Method ◽  
Metal Induced Growth ◽  
Sputtering System

AbstractPolycrystalline Si thin films and single NiSi crystalline nanowires were made by the metal induced growth method. The different growth mechanisms for poly-Si and nanowires lie in the metal silicide formation. Poly-Si growth is based on metal disilicide formation and the growth of nanowires depends on metal monosilicide formation. The metal silicide formation depends on catalyst species and sputtering power. Following catalyst coating, Si was deposited in a DC magnetron sputtering system to grow poly-Si or nanowires. Several metals (Ni, Co, Co/Ni and Pd) were used as catalysts to confirm the nanowire growth mechanism as well as to fabricate solar cells. Poly-Si thin films were about 5 μm thick with up to 1 μm crystallite size. Nanowires were up to 10 μm long with about 50 nm diameter.

NiSi Nanowires and Nanobridges Formed by Metal-Induced Growth

2005 ◽  
Vol 901 ◽  
Author(s):  
Joondong Kim ◽  
Dongho Lee ◽  
Wayne A Anderson
Keyword(s):  
Solid State ◽  
Ohmic Contact ◽  
Solid State Reaction ◽  
Building Block ◽  
Low Temperatures ◽  
Optical Lithography ◽  
The Self ◽  
Metal Induced Growth ◽  
Lift Off ◽  
Nanoscale Building Block

AbstractNickel monosilicide (NiSi) nanowires (NWs) were fabricated by metal-induced growth at 575 °C. The solid-state reaction of Ni and Si provides linear grown NWs. The parallel grown NW forms a nanobridge (NB) across a trench, patterned with a simple optical lithography and metal lift-off method. The Ni pads gave a good Ohmic contact without affecting the I-V transport characteristics through a NB. The metallic NB, 2.73 µm in length and 50 nm in diameter, gave a low resistance of 148 . The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

Strongly confined excitons in self-assembled InGaAs quantum dot clusters produced by a hybrid growth method

2010 ◽  
Vol 107 (10) ◽  
pp. 104302 ◽  
Author(s):  
Megan Creasey ◽  
Xiaoqin Li ◽  
J. H. Lee ◽  
Zh. M. Wang ◽  
G. J. Salamo
Keyword(s):  
Quantum Dot ◽  
Growth Method ◽  
Hybrid Growth ◽  
Self Assembled

Magnetic Properties of Sputtered Fe-O and Co-O Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
D. V. Dimitrov ◽  
A. S. Murthy ◽  
G. C. Hadjipanayis ◽  
C. P. SWANN
Keyword(s):  
Grain Size ◽  
Low Temperatures ◽  
Room Temperature ◽  
Oxide Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Large Shift ◽  
X Ray ◽  
Grain Size And Shape ◽  
Spherical Grains

AbstractFe-O and Co-O films were prepared by DC magnetron sputtering in a mixture of Ar and O2 gases. By varying the oxygen to argon ratio, oxide films with stoichiometry FeO, Fe3O4, α-Fe2O3, CoO and Co3O4 were produced. TEM studies showed that the Fe – oxide films were polycrystalline consisting of small almost spherical grains, about 10 nm in size. Co-O films had different microstructure with grain size and shape dependent on the amount of oxygen. X-ray diffraction studies showed that the grains in Fe-O films were randomly oriented in contrast to Co-O films in which a <111> texture was observed. Pure FeO and α-Fe2O3 films were found to be superparamagnetic at room temperature but strongly ferromagnetic at low temperatures in contrast to the antiferromagnetic nature of bulk samples. A very large shift in the hysteresis loop, about 3800 Oe, was observed in field cooled Co-CoO films indicating the presence of a large unidirectional exchange anisotropy.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Tunable ion flux density and its impact on AlN thin films deposited in a confocal DC magnetron sputtering system

2018 ◽  
Vol 348 ◽  
pp. 159-167 ◽  
Author(s):  
M. Trant ◽  
M. Fischer ◽  
K. Thorwarth ◽  
S. Gauter ◽  
J. Patscheider ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Flux Density ◽  
Ion Flux ◽  
Dc Magnetron Sputtering ◽  
Sputtering System

scholarly journals Hands-on project aimed at technical education: realizing a dc magnetron sputtering system

2021 ◽  
Author(s):  
Sonny Massahi ◽  
Desiree Ferreira ◽  
Michael Avngaard ◽  
Aksel Christensen ◽  
Daniel Haugbølle ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Technical Education ◽  
Dc Magnetron Sputtering ◽  
Hands On ◽  
Sputtering System
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