Analysis of Proton Induced Defects in Cu(In,Ga)Se2 Thin-Film Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Shirou Kawakita ◽  
Mitsuru Imaizumi ◽  
Koichi Kibe ◽  
Shinichi Yoda ◽  
Takeshi Ohshima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Minority Carrier Diffusion Length ◽  
Defect Annealing ◽  
Radiation Induced ◽  
Cigs Solar Cells ◽  
Induced Defects ◽  
Mev Protons

AbstractWe investigated radiation-induced defects in CIGS solar cells with a solar-cell simulator to analyze the spectral response of the irradiated cells. The damage constant of the minority-carrier diffusion length of the cells irradiated with 1 MeV protons was determined to be 3.5 ×10-5. This analysis led to the relation between the defect introduction rate and proton energy, and was obtained using the same method, as was the defect annealing rate. This result agreed well with that estimated from an analysis of changes in short-circuit current degradation.

scholarly journals Annealing Characteristics of Amorphous Silicon Alloy Solar Cells Irradiated with 1.00 MeV Protons

1991 ◽  
Vol 219 ◽  
Author(s):  
Salman S. Abdulaziz ◽  
James R. Woodyard
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Dispersive Transport ◽  
Carrier Recombination ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Mev Protons

ABSTRACTa-Si:H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.2 5E15 cm-2. Annealing of the short-circuit current density was studied at 0, 22, 50, 100 and 150 °C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at O °C and the initial characteristics of the cells are restored by annealing at 200 °C. It is proposed that the degradation in the short-circuit current density with irradiation is due to carrier recombination through the fraction of D° states bounded by the guasi-Fermi energies. The time dependence of the rate of annealing in the short-circuit current density appears to be consistent with the interpretation that there is dispersive transport mechanism which leads to the annealing of the irradiation induced defects.

scholarly journals Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electron Microscopic ◽  
Current Increase ◽  
Time Resolved ◽  
Cigs Solar Cells

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Rear Surface ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

scholarly journals A Quarterthiophene-Based Dye as an Efficient Interface Modifier for Hybrid Titanium Dioxide/Poly(3-hexylthiophene)(P3HT) Solar Cells

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1752 ◽  
Author(s):  
Arumugam Pirashanthan ◽  
Thanihaichelvan Murugathas ◽  
Neil Robertson ◽  
Punniamoorthy Ravirajan ◽  
Dhayalan Velauthapillai
Keyword(s):  
Titanium Dioxide ◽  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Hole Mobility ◽  
Short Circuit Current ◽  
Acid Group ◽  
Open Circuit ◽  
Absorption Data

This work focused on studying the influence of dyes, including a thiophene derivative dye with a cyanoacrylic acid group ((E)-2-cyano-3-(3′,3′′,3′′′-trihexyl-[2,2′:5′,2′′:5′′,2′′′- quaterthiophene]-5-yl) acrylicacid)(4T), on the photovoltaic performance of titanium dioxide (TiO2)/poly(3-hexyl thiophene)(P3HT) solar cells. The insertion of dye at the interface improved the efficiency regardless of the dye used. However, 4T dye significantly improved the efficiency by a factor of three when compared to the corresponding control. This improvement is mainly due to an increase in short circuit current density (JSC), which is consistent with higher hole-mobility reported in TiO2/P3HT nanocomposite with 4T dye. Optical absorption data further revealed that 4T extended the spectral response of the TiO2/P3HT nanocomposite, which could also enhance the JSC. The reduced dark current upon dye insertion ensured the carrier recombination was controlled at the interface. This, in turn, increased the open circuit voltage. An optimized hybrid TiO2/P3HT device with 4T dye as an interface modifier showed an average efficiency of over 2% under-simulated irradiation of 100 mWcm−2 (1 sun) with an Air Mass 1.5 filter.

Understanding Metastable Defect Creation in CIGS by Detailed Device Modeling and Measurements on Bifacial Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
Jin Woo Lee ◽  
David Berney Needleman ◽  
William N. Shafarman ◽  
J. David Cohen
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Channel Modeling ◽  
Open Circuit ◽  
Conversion Model ◽  
Donor Acceptor ◽  
Recombination Channel ◽  
Cigs Solar Cells ◽  
Induced Changes

AbstractWe present a compensated donor-acceptor conversion model to explain the metastable light-induced changes in the performance of CIGS solar cells. In this model, compensating donors plays the role of recombination channel. Modeling using SCAPS-1D yielded reasonable fits to the I-V curves in different metastable states, matching the experimentally observed decreases in short circuit current and fill factor as well as the lack of change in open circuit voltage. Comparison of the experimental results from bifacial solar cells and SCAPS simulations strongly supports the compensated donor-acceptor conversion model both qualitatively and quantitatively.

Enhanced Light Absorption in a-Si:H Layers of Solar Cells by Applying Tco/Metal Back Contacts

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Tao ◽  
B.S. Girwar ◽  
G.E.N. Landweer ◽  
M. Zeman ◽  
J.W. Metselaar
Keyword(s):  
Solar Cells ◽  
Metal Layer ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Back Contact ◽  
Flat Substrate ◽  
Metal Layers ◽  
Metal Back

The optimization of the back contact reflectivity for thin film a-Si:H solar cells has been performed. The results of optical calculations show that a-Si:H/TCO/Metal interfaces with a proper TCO thickness reflect much more than their a-Si:H/Metal counterparts. We compared solar cells which were deposited on a flat substrate with different back contacts. The back contacts consisted of a metal layer (aluminum, silver/aluminum) or combined TCO/metal layers (TCO/Al, TCO/Ag/Al). The same was done with solar cells which were deposited on a textured substrate. The solar cells with a TCO/metal back contact showed not only a significantly increased short-circuit current density but also an increase in the spectral response. The cells with TCO/Ag/Al back contact showed the best result.

Effect of CdCl2 Treatment of CdS Films on CdTe/CdS Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
W. Song ◽  
D. Mao ◽  
L. Feng ◽  
Y. Zhu ◽  
M. H. Aslan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
X Ray Diffraction ◽  
Cdcl2 Treatment ◽  
The Difference ◽  
Cds Films

AbstractWe investigated the effect of CdCl2 treatment of CdS films on the photovoltaic performance of polycrystalline CdTe/CdS solar cells. X-ray diffraction studies indicated that the diffusion of S into CdTe is qualitatively the same for CdTe/CdS films fabricated with both as-deposited and CdCl2-treated CdS. A major difference was observed in the extent of Te diffusion into CdS for the two types of CdS films. Full conversion of CdS into CdS1-yTey; was observed for films prepared with asdeposited CdS, while the formation of the ternary phase was below the detection limit for films prepared with CdCl2-treated CdS. Photoluminescence measurements confirmed this result. The difference in interdiffusion leads to differences in optical transmission of CdS films and spectral response of CdTe/CdS solar cells. An increase of 2.7 mA/cm2 in short-circuit current density was observed as a result of improved spectral response in the wavelength range of 500–600 nm for the CdCl2-treated CdS.

Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film

2005 ◽  
Vol 865 ◽  
Author(s):  
K. Matsubara ◽  
A. Yamada ◽  
S. Ishizuka ◽  
K. Sakurai ◽  
H. Tampo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Band Gap Energy ◽  
Short Circuit Current Density ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Wide Gap ◽  
Cigs Solar Cells ◽  
Mg Content

AbstractZn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

scholarly journals Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Antonino Parisi ◽  
Riccardo Pernice ◽  
Vincenzo Rocca ◽  
Luciano Curcio ◽  
Salvatore Stivala ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Energy Gap ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Doping Density ◽  
Cigs Solar Cells

We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%).

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