Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film
Keyword(s):
Wide Gap
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AbstractZn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.
2020 ◽
Vol 89
(3)
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pp. 30201
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Keyword(s):
2019 ◽
Vol 9
(1)
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pp. 28
2021 ◽