Preparation of Aluminum Nitride and Oxynitride Thin Films by Ion-Assisted Deposition

ABSTRACTAluminum nitride thin films have been deposited by ion-assisted deposition. Aluminum was electron-beam evaporated onto substrates with simultaneous nitrogen ion bombardment. Rutherford backscattering spectrometry showed that nitrogen-to-aluminum ratios of one or greater could be achieved with sufficient nitrogen ion fluxes. This excess nitrogen apparently degrades the optical properties of the films in the visible. Annealing at 500°C improves the optical properties drastically at the expense of a slight oxygen diffusion into the films. Finally, aluminum oxynitride films were deposited by adding an oxygen backfill to the vacuum chamber during deposition. These films had very similar optical properties to the annealed nitride films.

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Microstructure and Optical Properties of Aluminum Nitride Thin Films

MRS Proceedings ◽

10.1557/proc-403-539 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 3

Author(s):

Yoshihisa Watanabe ◽

Yoshikazu Nakamura ◽

Shigekazu Hirayama ◽

Yuusaku Naota

Keyword(s):

Thin Films ◽

Optical Properties ◽

Aluminum Nitride ◽

Beam Energy ◽

Ion Beam ◽

Optical Measurements ◽

Constant Current ◽

Constant Current Density ◽

Polycrystalline Aluminum ◽

Nitrogen Ion

AbstractPolycrystalline aluminum nitride (AIN) thin films have been synthesized by ion-beam assisted deposition method and the effect of ion beam energy on the film structure and optical properties has been studied. The kinetic energy of nitrogen ion beam was varied from 0.05 to 1.5 keV under the constant current density. Microstructure of films was examined by thin film X ray diffraction (TFXRD) and optical transmission spectrum from 220 to 2200 nm was measured by UV-visible spectrometer. The TFXRD studies show that the (00*02) plane of hexagonal AIN grows preferentially with the ion beam energy of 0.05 keV and the intensity of the (10*0) and (10*1) planes becomes strong with increasing the ion beam energy. The optical measurements reveal that the wavy structures due to the interference effect are observed in the transmission spectra and the wavy pattern decreases with increasing the ion beam energy, resulting in the decrease of refractive index.

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Influence of magnesium doping on the structural and optical properties of tin (II) oxide thin films deposited by electron beam evaporation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2013.01.017 ◽

2013 ◽

Vol 16 (3) ◽

pp. 899-904 ◽

Cited By ~ 3

Author(s):

Syed Mansoor Ali ◽

Syed Tajammul Hussain ◽

Jan Muhammad ◽

M. Ashraf ◽

Aslam Farooq ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Electron Beam Evaporation ◽

Oxide Thin Films ◽

Structural And Optical Properties ◽

Magnesium Doping

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Effect of Substrate Temperature on the Structural and Optical Properties of Nanocrystalline Cadmium Selenide Thin Films Prepared by Electron Beam Evaporation Technique

Acta Physica Polonica A ◽

10.12693/aphyspola.118.623 ◽

2010 ◽

Vol 118 (4) ◽

pp. 623-628 ◽

Cited By ~ 12

Author(s):

N.J. Suthan Kissinger ◽

J. Suthagar ◽

B. Saravana Kumar ◽

T. Balasubramaniam ◽

K. Perumal

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Substrate Temperature ◽

Cadmium Selenide ◽

Electron Beam Evaporation ◽

Structural And Optical Properties ◽

Electron Beam Evaporation Technique ◽

Evaporation Technique

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Comparison of optical properties of TiO2 thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo14.04.427 ◽

2011 ◽

Vol 14 (4) ◽

pp. 427-431 ◽

Cited By ~ 6

Author(s):

V. V. Brus ◽

◽

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Magnetron Sputtering ◽

Electron Beam Evaporation ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Tio2 Thin Films

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Substrate temperature dependent structural and optical properties of ZnSe thin films by electron beam evaporation technique

Journal of the Korean Physical Society ◽

10.3938/jkps.55.1577 ◽

2009 ◽

Vol 55 (4) ◽

pp. 1577-1581 ◽

Cited By ~ 9

Author(s):

Suthan Kissinger ◽

Natarajan Velmuruganb ◽

K. Perumalc

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Substrate Temperature ◽

Electron Beam Evaporation ◽

Temperature Dependent ◽

Structural And Optical Properties ◽

Electron Beam Evaporation Technique ◽

Evaporation Technique ◽

Znse Thin Films

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Reaction Sintering of Transparent Aluminum Oxynitride (AlON) Ceramics Using MgO and Y2O3 as Co-Additives

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.697.7 ◽

2016 ◽

Vol 697 ◽

pp. 7-11 ◽

Cited By ~ 3

Author(s):

Shen Qi ◽

Xiao Jian Mao ◽

Bao Yan Chai ◽

Long Zhang

Keyword(s):

Grain Size ◽

Optical Properties ◽

Liquid Phase ◽

Aluminum Nitride ◽

Sintering Temperature ◽

Direct Reaction ◽

Reaction Sintering ◽

Aluminum Oxynitride ◽

Sintering Additives

Transparent aluminum oxynitride (AlON) ceramics have been prepared through a method based on direct reaction sintering of alumina and aluminum nitride powders using MgO and Y2O3 as co-additives. The sintering additives could cause the formation of liquid phase during sintering, which would greatly promote the densification and eliminate pores. The grain size of AlON is about 50-100μm. The influence of different component of Al2O3 and AlN as well as sintering temperature on microstructure and optical properties of AlON have been studied. High transparent AlON ceramics with the in-line transmittance of 80.3% at 2000 nm wavelength have been prepared when the concentration of sintering additives was 0.16wt% Y2O3 and 0.02wt% MgO.

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Electron beam induced modifications of bismuth sulphide (Bi2S3) thin films: Structural and optical properties

Radiation Physics and Chemistry ◽

10.1016/j.radphyschem.2010.06.002 ◽

2010 ◽

Vol 79 (11) ◽

pp. 1127-1131 ◽

Cited By ~ 11

Author(s):

S. Subramanian ◽

M. Balaji ◽

P. Chithra lekha ◽

Ganesh Sanjeev ◽

E. Subramanian ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Structural And Optical Properties

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Compositional Tailored Sol-Gel SiO2–TiO2 Thin Films: Crystallization, Chemical Bonding Configuration, and Optical Properties

Journal of Materials Research ◽

10.1557/jmr.2005.0393 ◽

2005 ◽

Vol 20 (11) ◽

pp. 3141-3149 ◽

Cited By ~ 29

Author(s):

Li-Lan Yang ◽

Yi-Sheng Lai ◽

J.S. Chen ◽

P.H. Tsai ◽

C.L. Chen ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Chemical Bonding ◽

Rutherford Backscattering Spectrometry ◽

Incident Angle ◽

Sol Gel ◽

Molar Ratio ◽

Titanium Tetraisopropoxide ◽

Tio2 Thin Films ◽

Bonding Configuration

Thin films of SiO2–TiO2 composite oxides with various SiO2:TiO2 compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium tetraisopropoxide (TTIP) as precursors. The composition, crystal structure, and chemical bonding configuration of the as-deposited and annealed SiO2–TiO2 thin films were analyzed using Rutherford backscattering spectrometry (RBS), glancing incident angle x-ray diffraction (GIAXRD) and Fourier transform infrared spectroscopy (FTIR), respectively. Optical properties of the films were characterized by spectroscopic ellipsometry and ultraviolet-visible spectrophotometry. The Si/Ti ratios in the SiO2–TiO2 films agree with the TEOS/TTIP molar ratio in the sol-gel precursor. When the TEOS/(TEOS + TTIP) ratio is greater than 40%, the SiO2–TiO2 thin films remain amorphous (without formation of TiO2 crystalline phase) after annealing at temperatures as high as 700 °C. FTIR spectra indicate that the quantity of Si–O–Ti bonding can be maximized when the TEOS:TTIP in the precursor is 80%:20%. The refractive index of the SiO2–TiO2 films increases approximately linearly to the mixing ratio of TTIP/(TEOS + TTIP). However, SiO2-rich films possess higher ultraviolet-visible transmittance than the TiO2-rich films. The modification of microstructure and chemical bonding configuration in the SiO2–TiO2 films by the composition and its influence on the optical properties are discussed.

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