Electron Diffraction and TEM Studies of Y1Ba2Cu3O7−x

1987 ◽  
Vol 99 ◽  
Author(s):  
R. Pérez ◽  
J. G. Pérez-Ramírez ◽  
M. Avalos ◽  
J. Reyes ◽  
L. Martinez ◽  
...  

ABSTRACTOptical microscopy and transmission electron microscopy show that most of the crystalline grains in Y1Ba2Cu3O7−x superconducting specimens have large number of twins. These bands of different image contrast have similar microdiffraction patterns. However the diffraction conditions are different and correspond to different tilts of the crystalline grains along one of the zone axis. HREM images of these twin boundaries indicate that the boundary area has appreciable dimensions and both matrix and twin crystals show the existence of a superstructure with double of the common periodicity obtained under [001] diffraction conditions.

2009 ◽  
Vol 1216 ◽  
Author(s):  
Ke Wang ◽  
Jason Hattrick-Simpers ◽  
Leonid Bendersky

AbstractPhase transformations in epitaxial yttrium films grown on (0001)Ti//(0001)Al2O3 Ti-buffered sapphire substrates and hydrogenated for 10 min were characterized using transmission electron microscopy. After hydrogen charging, dense twin lamellae form during α(Y(H))-to-β(YH2) phase transition with twin boundaries predominately parallel to the interface between Y and a substrate. High densities of Shockley partial dislocations are present at the twin boundaries, their glides during phase transformation are responsible for the formation of twin lamellae. Electron diffraction from YH2 phase shows superlattice reflections, which suggests a new type of ordering on octahedral interstitial sites.


Author(s):  
John F. Mansfield

The current imaging trend in optical microscopy, scanning electron microscopy (SEM) or transmission electron microscopy (TEM) is to record all data digitally. Most manufacturers currently market digital acquisition systems with their microscope packages. The advantages of digital acquisition include: almost instant viewing of the data as a high-quaity positive image (a major benefit when compared to TEM images recorded onto film, where one must wait until after the microscope session to develop the images); the ability to readily quantify features in the images and measure intensities; and extremely compact storage (removable 5.25” storage devices which now can hold up to several gigabytes of data).The problem for many researchers, however, is that they have perfectly serviceable microscopes that they routinely use that have no digital imaging capabilities with little hope of purchasing a new instrument.


Author(s):  
George Guthrie ◽  
David Veblen

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


1997 ◽  
Vol 5 (4) ◽  
pp. 14-15
Author(s):  
John F. Mansfield

The current imaging trend in optical microscopy, scanning electron microscopy (SEM) or transmission electron microscopy (TEM) is to record all data digitally. Most manufacturers currently market digital acquisition systems with their microscope packages. The advantages of digital acquisition include: almost instant viewing of the data as a high-quality positive image (a major benefit when compared to TEM images recorded onto film, where one must wait until after the microscope session to develop the images); the ability to readily quantify features in the images and measure intensities; and extremely compact storage (removable 5.25” storage devices which now can hold up to several gigabytes of data).


1983 ◽  
Vol 29 ◽  
Author(s):  
M. I. Birjega ◽  
C. A. Constantin ◽  
M. Dinescu ◽  
I. Th. Florescu ◽  
I. N. Mihailescu ◽  
...  

ABSTRACTThe crystallization and oxidation processes of thin, free-standing (FS), sputtered Cr films under the action of cw CO2 laser irradiation were studied by transmission electron microscopy (TEM) and transmission electron diffraction (TED). The crystallization is induced at power densities above 28.65 W cm−2, dwell time of 1 s, and the oxidation at power densities of 48.1 W cm−2 and longer dwell times.


2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.


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