A Differential on Chip Oscillator with 1.47-μs Startup Time and 3.3-ppm/°C Temperature Coefficient of Frequency

2021 ◽  
Vol E104.A (2) ◽  
pp. 499-505
Author(s):  
Guoqiang ZHANG ◽  
Lingjin CAO ◽  
Kosuke YAYAMA ◽  
Akio KATSUSHIMA ◽  
Takahiro MIKI
Keyword(s):  
Temperature Coefficient ◽  
Temperature Coefficient Of Frequency ◽  
Startup Time ◽  
On Chip

Resistorless Frequency Locked On-Chip Oscillator with Proportional-to-Absolute Temperature References

2019 ◽  
Vol 28 (10) ◽  
pp. 1950162 ◽  
Author(s):  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang
Keyword(s):  
Power Consumption ◽  
Temperature Coefficient ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Chip Area ◽  
Frequency Spread ◽  
Temperature Coefficient Of Frequency ◽  
On Chip

A 36-kHz frequency locked on-chip oscillator is proposed, the proportional-to-absolute temperature (PTAT) current and voltage generator is presented to eliminate conventional temperature-compensated resistors. The resistorless approach reduces the process variation of frequency and the chip area. The oscillator is fabricated in 0.18-[Formula: see text]m standard CMOS process with an active area of 0.072[Formula: see text]mm2. The temperature coefficient of frequency is 48[Formula: see text]ppm/∘C at best and 82.5[Formula: see text]ppm/∘C on average over [Formula: see text]–70∘C and the frequency spread is 1.43% ([Formula: see text]/[Formula: see text] without calibration. The supply voltage sensitivity is 1.8%/V in the range from 0.65[Formula: see text]V to 1[Formula: see text]V and the power consumption is 95[Formula: see text]nW under the supply voltage of 0.65[Formula: see text]V.

Simulation and Analysis of the Temperature-Compensated FBAR

2015 ◽  
Vol 719-720 ◽  
pp. 490-495
Author(s):  
Bin Zhou ◽  
Yang Gao ◽  
Yi He ◽  
Wan Jing He
Keyword(s):  
Temperature Coefficient ◽  
Electromechanical Coupling ◽  
Positive Temperature Coefficient ◽  
Frequency Drift ◽  
Center Frequency ◽  
Positive Temperature ◽  
Analysis Software ◽  
Element Analysis ◽  
Simulated Temperature ◽  
Temperature Coefficient Of Frequency

The property of temperature-frequency drift has an effect on the passband ripples, center frequency and insertion loss of FBAR filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo/AlN/Mo FBAR is achieved by means of finite element analysis software ANSYS, the simulated temperature coefficient of frequency is about-35ppm/°C within the temperature range of-50°C~150°C. By adding a compensated layer with positive temperature coefficient in the FBAR structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature coefficient of frequency of designed temperature compensated FBAR, which composed of Mo/AlN/SiO2/Mo, is about 0.8ppm/°C, the property of temperature-frequency drift is effectively improved.

Zero Temperature Coefficient of Frequency Surface Acoustic Wave Resonator for Narrow-Duplex-Gap Application on SiO2/Al/LiNbO3Structure

2011 ◽  
Vol 50 (7) ◽  
pp. 07HD13 ◽  
Author(s):  
Hidekazu Nakanishi ◽  
Hiroyuki Nakamura ◽  
Tetsuya Tsurunari ◽  
Joji Fujiwara ◽  
Yosuke Hamaoka ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Surface Acoustic Wave ◽  
Zero Temperature ◽  
Wave Resonator ◽  
Temperature Coefficient Of Frequency

The Improvement of Temperature Coefficient of Frequency in Thin Film Bulk Acoustic Wave Resonator using Secondary Harmonics

2002 ◽  
Vol 741 ◽  
Author(s):  
Yukio Yoshino ◽  
Masaki Takeuchi ◽  
Hajime Yamada ◽  
Yoshihiko Goto ◽  
Tadashi Nomura ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Finite Element Method Simulation ◽  
Thickness Ratio ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk ◽  
Temperature Coefficient Of Frequency

ABSTRACTWe have succeeded in making an 870MHz-range thin film bulk acoustic wave (BAW) resonator that has a small temperature coefficient of frequency (TCF) using secondary harmonics. The 870MHz-range BAW resonator has been requested to have nearly zero TCF, because it will be used in an oscillator for remote keyless entry systems. The BAW resonator has composite structure that consists of Al electrodes and ZnO/SiO2. We directed our attention to the fact that ZnO and Al have negative TCF, and SiO2 has a positive one. It is theoretically possible to make zero TCF BAW resonators by optimizing the thickness ratio of ZnO and SiO2. However, using fundamental resonance, TCF is so sensitive to the thickness ratio that it cannot be easily controlled by MEMS techniques. We founds in finite element method simulation and confirmed by experiment that the TCF of secondary harmonics has a local minimum when changing the ZnO/SiO2 thickness ratio. As the result, a nearly zero TCF resonator without strict control of ZnO/SiO2 thickness ratio has been realized by adopting Al/ZnO/SiO2/ZnO/Al/SiO2 structure and combining thermal oxidized Si and sputtered SiO2. The resonator has the TCF of -1.86ppm/degree in the range of −40 to 85 degrees centigrade.

scholarly journals Effects of compensating the temperature coefficient of frequency with the acoustic reflector layers on the overall performance of solidly mounted resonators

Ultrasonics ◽  
2017 ◽  
Vol 74 ◽  
pp. 153-160 ◽  
Author(s):  
Junaid Munir ◽  
Teona Mirea ◽  
Mario DeMiguel-Ramos ◽  
M.A. Saeed ◽  
Amiruddin Bin Shaari ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Temperature Coefficient Of Frequency ◽  
Overall Performance
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