Retardation of Grain Growth in Nanocrystalline Zirconia by an Electric Field

ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

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Piezoelectric Properties and Electric Field-Induced-Strains of Textured (Bi1/2K1/2)TiO3- BaTiO3 Ceramics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.566.50 ◽

2013 ◽

Vol 566 ◽

pp. 50-53

Author(s):

Fumiaki Kawada ◽

Yuji Hiruma ◽

Hajime Nagata ◽

Tadashi Takenaka

Keyword(s):

Electric Field ◽

Grain Growth ◽

Piezoelectric Properties ◽

Density Ratio ◽

Orientation Factor ◽

Templated Grain Growth ◽

Direction Parallel ◽

Piezoelectric Strain ◽

High Orientation ◽

Piezoelectric Strain Constant

Grain-oriented 0.8(Bi1/2K1/2)TiO3-0.2BaTiO3 (BKT-BT20) ceramics were prepared by the Reactive Templated Grain Growth (RTGG) method. The BKT-BT20 ceramics sintered at 1070°C for 100 h. The grain-oriented BKT-BT20 exhibited relatively high orientation factor, F, of 0.87 and density ratio of 92%. A resistivity of textured BKT-BT20 was 1.29×1013 Ωcm. Piezoelectric strain constant, d33, and the normalized strain, d33*, of the textured BKTBT20 ceramic in the direction parallel (//) to the tape stacking direction were 117 pC/N and 243 pm/V (at 80 kV/cm), respectively.

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Grain growth model for electric field-assisted processing and flash sintering of materials

Scripta Materialia ◽

10.1016/j.scriptamat.2013.01.008 ◽

2013 ◽

Vol 68 (10) ◽

pp. 785-788 ◽

Cited By ~ 53

Author(s):

J. Narayan

Keyword(s):

Electric Field ◽

Grain Growth ◽

Growth Model ◽

Flash Sintering ◽

Grain Growth Model

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Ion beam-induced amorphous-to-tetragonal phase transformation and grain growth of nanocrystalline zirconia

Nanotechnology ◽

10.1088/0957-4484/20/24/245303 ◽

2009 ◽

Vol 20 (24) ◽

pp. 245303 ◽

Cited By ~ 41

Author(s):

Jie Lian ◽

Jiaming Zhang ◽

Fereydoon Namavar ◽

Yanwen Zhang ◽

Fengyuan Lu ◽

...

Keyword(s):

Phase Transformation ◽

Grain Growth ◽

Tetragonal Phase ◽

Ion Beam ◽

Nanocrystalline Zirconia

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Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries

Physical Chemistry Chemical Physics ◽

10.1039/c6cp01763k ◽

2016 ◽

Vol 18 (25) ◽

pp. 16921-16929 ◽

Cited By ~ 14

Author(s):

Sanchita Dey ◽

John Mardinly ◽

Yongqiang Wang ◽

James A. Valdez ◽

Terry G. Holesinger ◽

...

Keyword(s):

Grain Boundaries ◽

Grain Growth ◽

Thermally Induced ◽

Defect Evolution ◽

Nanocrystalline Zirconia

Irradiation induced grain growth in nanocrystalline zirconia cannot be stopped by using similar strategies as in thermally induced grain growth.

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Processing of Dense Nanocrystalline Zirconia Thin Films by Sol-Gel

MRS Proceedings ◽

10.1557/proc-0928-gg16-01 ◽

2006 ◽

Vol 928 ◽

Author(s):

Christoph Peters ◽

Matthias Bockmeyer ◽

Reinhard Krüger ◽

André Weber ◽

Ellen Ivers-Tiffée

Keyword(s):

Thin Films ◽

Grain Growth ◽

Rapid Thermal Annealing ◽

Growth Phase ◽

Sol Gel ◽

Grain Sizes ◽

Sapphire Substrates ◽

Metal Organic ◽

Nanocrystalline Zirconia ◽

Metal Organic Deposition

ABSTRACTVia metal organic deposition (MOD) sapphire substrates were multiple dip-coated with a molecular dispersive 8 mol% Y2O3 doped ZrO2 (8YSZ) sol to prepare dense, crack-free thin films. The thin films were consecutively exposed to a tempering program with several rapid thermal annealing (RTA) steps and a final dwell temperature between 500 °C and 1400 °C for 24 h. Grain growth, phase, stoichiometry and macroscopic density of the thin films were analyzed by XRD and SEM. Grain sizes ranged between a few nanometers in diameter at 500 °C and several hundreds of nanometers at 1400 °C.

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