Processing of Dense Nanocrystalline Zirconia Thin Films by Sol-Gel

2006 ◽  
Vol 928 ◽  
Author(s):  
Christoph Peters ◽  
Matthias Bockmeyer ◽  
Reinhard Krüger ◽  
André Weber ◽  
Ellen Ivers-Tiffée

ABSTRACTVia metal organic deposition (MOD) sapphire substrates were multiple dip-coated with a molecular dispersive 8 mol% Y2O3 doped ZrO2 (8YSZ) sol to prepare dense, crack-free thin films. The thin films were consecutively exposed to a tempering program with several rapid thermal annealing (RTA) steps and a final dwell temperature between 500 °C and 1400 °C for 24 h. Grain growth, phase, stoichiometry and macroscopic density of the thin films were analyzed by XRD and SEM. Grain sizes ranged between a few nanometers in diameter at 500 °C and several hundreds of nanometers at 1400 °C.

1990 ◽  
Vol 202 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Wendell E. Rhine

ABSTRACTThe evolution of the microstructure of sol-gel derived LiNbO3 thin films was investigated to understand the growth of epitaxial films. LiNbO3 films were prepared from a precursor solution of lithium ethoxide and niobium pentaethoxide. Prehydrolysis promoted the development of polycrys-talline LiNbO3 films, whereas nonhydrolysis produced solid-state epitaxial growth of LiNbO3 films on sapphire substrates. Although the films looked smooth after annealing at 400°C, the morphology of the films changed, depending on substrates and precursors, due to grain growth at high annealing temperature. Prehydrolysis of the alkoxides caused a decrease in the temperature at which grain growth occurred, whereas the film prepared from the nonhydrolyzed precursor on a sapphire substrate showed denser texture and contained abnormally large domains that appeared to be single phase.


1995 ◽  
Vol 10 (7) ◽  
pp. 1779-1783 ◽  
Author(s):  
K. Terabe ◽  
N. Iyi ◽  
K. Kitamura ◽  
S. Kimura

Epitaxial thin films of LiNbO3 were prepared by the sol-gel method on (0001)-sapphire, (0001)-LiTaO3 and (0001)-5% MgO-doped LiNbO3, substrates. The precursor films crystallized with the highly preferred orientation on all substrates. When sapphire substrates, which have large discrepancies in the lattice constant and thermal expansion percentage with the film were used, the resulting films showed a low crystallinity after heat treatment at 500 °C and grain growth at 650 °C. On the other hand, when using LiTaO3 and 5% MgO-doped LiNbO3 substrates, with smaller discrepancies, the formed films, after heat treatment at 500 °C, showed better crystallinity with the smooth surface.


2007 ◽  
Vol 544-545 ◽  
pp. 1061-1064
Author(s):  
Hyeong Ho Park ◽  
Hyung Ho Park ◽  
Ho Jung Chang ◽  
Hyeong Tag Jeon

The ferroelectric properties of UV irradiated and non-irradiated SBT thin films using photosensitive starting precursors were investigated. The observation of surface microstructure showed that UV irradiation and increase in anneal temperature induced the grain growth of SBT. The measured remnant polarization values of UV irradiated and non-irradiated SBT films after anneal at 700oC were 5.8 and 4.7 )C/cm2 and after anneal at 750oC, the values were 10.8 and 9.3 )C/cm2, respectively.


2015 ◽  
Vol 04 (01) ◽  
pp. 1-8
Author(s):  
Kais Daoudi ◽  
Zied Othmen ◽  
Saoussen El Helali ◽  
Meherzi Oueslati ◽  
Tetsuo Tsuchiya

2008 ◽  
Vol 368-372 ◽  
pp. 1817-1819
Author(s):  
Cui Hua Zhao ◽  
Bo Ping Zhang ◽  
Yong Liu ◽  
Song Jie Li

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.


Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1600 ◽  
Author(s):  
Alexander Tkach ◽  
André Santos ◽  
Sebastian Zlotnik ◽  
Ricardo Serrazina ◽  
Olena Okhay ◽  
...  

If piezoelectric micro-devices based on K0.5Na0.5NbO3 (KNN) thin films are to achieve commercialization, it is critical to optimize the films’ performance using low-cost scalable processing conditions. Here, sol–gel derived KNN thin films are deposited using 0.2 and 0.4 M precursor solutions with 5% solely potassium excess and 20% alkali (both potassium and sodium) excess on platinized sapphire substrates with reduced thermal expansion mismatch in relation to KNN. Being then rapid thermal annealed at 750 °C for 5 min, the films revealed an identical thickness of ~340 nm but different properties. An average grain size of ~100 nm and nearly stoichiometric KNN films are obtained when using 5% potassium excess solution, while 20% alkali excess solutions give the grain size of 500–600 nm and (Na + K)/Nb ratio of 1.07–1.08 in the prepared films. Moreover, the 5% potassium excess solution films have a perovskite structure without clear preferential orientation, whereas a (100) texture appears for 20% alkali excess solutions, being particularly strong for the 0.4 M solution concentration. As a result of the grain size and (100) texturing competition, the highest room-temperature dielectric permittivity and lowest dissipation factor measured in the parallel-plate-capacitor geometry were obtained for KNN films using 0.2 M precursor solutions with 20% alkali excess. These films were also shown to possess more quadratic-like and less coercive local piezoelectric loops, compared to those from 5% potassium excess solution. Furthermore, KNN films with large (100)-textured grains prepared from 0.4 M precursor solution with 20% alkali excess were found to possess superior local piezoresponse attributed to multiscale domain microstructures.


2017 ◽  
Vol 9 (11) ◽  
pp. e447-e447 ◽  
Author(s):  
Masashi Miura ◽  
Boris Maiorov ◽  
Michio Sato ◽  
Motoki Kanai ◽  
Takeharu Kato ◽  
...  

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