A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon
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Si Films
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ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.
Keyword(s):
2021 ◽
Vol 47
(21)
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pp. 39
2010 ◽
Vol 663-665
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pp. 654-657
Keyword(s):