Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth

Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional crystals are among the most promising materials for next-generation nanoelectronics and photonics. The exploration of the feasibility of 2D materials devices causes a deeper insight into the physical properties of these new materials and provides a starting point for the development of a number of important practical areas. Over the past few years, researchers have been attracting increased attention from graphene-like materials of group IVA elements, such as silicene (Si), germanene (Ge), stanene (Sn), and plumbene (Pb). Experimental production and study of the unique properties of two-dimensional monatomic layers of carbon, silicon, germanium, tin and lead on various substrates created the prerequisites for the development of new generation devices based on them. The wide possibilities for controlling their exotic electronic, magnetic and optical properties through the choice of the substrate, the design and geometry of the two-dimensional layer, as well as by controlling the magnitude of elastic stresses, have made them a dominating topic for studying in the field of nanotechnology and materials sciences. This paper reviews the latest advances in growing silicene, germanene, stanene, and plumbene using epitaxial methods. Growth technologies for creation of high-quality two-dimensional structures of large area required for promising instrumentation area are considered in more details.

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Microstrip Gas Counters

Innovative Applications and Developments of Micro-Pattern Gaseous Detectors - Advances in Chemical and Materials Engineering ◽

10.4018/978-1-4666-6014-4.ch002 ◽

2014 ◽

pp. 31-51

Keyword(s):

Glass Surface ◽

Two Dimensional ◽

Large Area ◽

Proportional Chamber ◽

Microelectronic Technology ◽

Multiwire Proportional Chamber ◽

Dimensional Version ◽

A Chain ◽

New Generation ◽

First Time

In this chapter, the first micropattern gaseous detector, the microstrip gas counter, invented in 1988 by A. Oed, is presented. It consists of alternating anode and cathode strips with a pitch of less than 1 mm created on a glass surface. It can be considered a two-dimensional version of a multiwire proportional chamber. This was the first time microelectronic technology was applied to manufacturing of gaseous detectors. This pioneering work offers new possibilities for large area planar detectors with small gaps between the anode and the cathode electrodes (less than 0.1 mm). Initially, this detector suffered from several serious problems, such as charging up of the substrate, discharges which destroyed the thin anode strips, etc. However, by efforts of the international RD28 collaboration hosted by CERN, most of them were solved. Although nowadays this detector has very limited applications, its importance was that it triggered a chain of similar developments made by various groups, and these collective efforts finally led to the creation of a new generation of gaseous detectors-micropattern detectors.

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Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

Journal of Visualized Experiments ◽

10.3791/58693 ◽

2019 ◽

Cited By ~ 2

Author(s):

Josh P. Thompson ◽

M. Hasan Doha ◽

Peter Murphy ◽

Jin Hu ◽

Hugh O.H. Churchill

Keyword(s):

Two Dimensional ◽

Large Area ◽

Two Dimensional Materials

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Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

Nano-Micro Letters ◽

10.1007/s40820-020-0402-x ◽

2020 ◽

Vol 12 (1) ◽

Cited By ~ 15

Author(s):

Ali Zavabeti ◽

Azmira Jannat ◽

Li Zhong ◽

Azhar Ali Haidry ◽

Zhengjun Yao ◽

...

Keyword(s):

Two Dimensional ◽

Large Area ◽

Large Crystal ◽

High Quality ◽

Future Technology ◽

Advantages And Disadvantages ◽

Grain Sizes ◽

Two Dimensional Materials ◽

Synthesis Properties ◽

Synthetic Routes

AbstractLarge-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.

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A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽

10.3390/nano9091245 ◽

2019 ◽

Vol 9 (9) ◽

pp. 1245 ◽

Cited By ~ 2

Author(s):

Kun Yang ◽

Hongxia Liu ◽

Shulong Wang ◽

Wei Li ◽

Tao Han

Keyword(s):

Carrier Mobility ◽

Transition Metal Dichalcogenides ◽

Image Force ◽

Drain Current ◽

Equivalent Model ◽

Two Dimensional ◽

Monolayer Mos2 ◽

Two Dimensional Materials ◽

Metal Dichalcogenides ◽

New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

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