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Author(s):  
Apostolos Gerodimos ◽  
Leandros Maglaras ◽  
Ioanna Kantzavelou ◽  
NIck Ayres

The IoT is recognized as one of the most important areas of future technology and is gaining vast attention from a wide range of industries. Although, after 20 years from the first published literature (2002) the technology (as a whole) is not yet mature. In this study we will review the basics of IoT with a general approach, by addressing the problems of a standard architecture, vulnerabilities and use cases of this promising technology. Moreover, we will review some of the communication protocols that have invented especially for IoT technology, security threats and general implementation challenges.


2021 ◽  
pp. 160-167
Author(s):  
A. TSINA

The article presents generalizations, in line with world and domestic educational processes, ideas and forms of development of scientific and pedagogical school “Aesthetic culture in the preparation of future educators” by Professor V. Tytarenko. The method of historical-retrospective analysis revealed the progressive achievements of the scientific school as a research center and a collective form of scientific creativity in the field of technological education on theoretical and methodological aspects of technological education of students by means of aesthetic culture and design. The study of the laws of formation of aesthetic culture of pupils and students by means of Ukrainian folk crafts began with the search and study of samples of Ukrainian folk embroidery, description of its techniques, distribution in different areas of certain ornaments, colors, traditions. The result of this work were her books “Ukrainian towel as a means of national education and a work of folk decorative and applied arts”, “Poltava traditional embroidery: past and present”. V. Tytarenko is one of the first initiators of conducting comprehensive research and experiments in Ukraine in the field of decorative and applied art, as well as the methodology of scientific and pedagogical research in this field of knowledge. The scientific interests of Valentyna Tytarenko’s scientific school are focused on the study of the laws of formation of the aesthetic culture of pupils and students by means of Ukrainian folk crafts. The creative team of like-minded people has successfully carried out research in recent years, funded by the state budget on “Theory and methods of forming the aesthetic culture of future technology teachers in the process of personality-oriented training”, and today completes research on “Theoretical -methodical aspects of technological education of pupils and students by means of culture and design”. Continuation of basic and applied research on this topic is implemented in the Poltava regional special research group of teachers of labor training and technology “Design as a method of cognition in the educational field of technology”, which works under the leadership of Professor V. Tytarenko. The formulated results of its activity on theoretical and methodological aspects of technological education of pupils and students by means of aesthetic culture and design which we can observe as a result of opening of ways of use of the maintenance and a technique of preparation of future teachers of labor training and student’s youth for training of the Ukrainian national crafts confirm their full conformity. data presented in the materials of dissertation research of representatives of the scientific school.


Author(s):  
Frederic Hilkenmeier ◽  
Christian Fechtelpeter ◽  
Julian Decius

AbstractOne of the main challenges in technology transfer is to actively involve small and medium-sized enterprises (SMEs)—which are most in need of and benefit the most from collaborative Research and Development (R&D) programs. This study presents a large-scale collaboration program which focuses on project-based technology transfer in SMEs with little to no prior experience in collaborative research projects. The core of this collaboration program is the temporary secondment of scientists from a Research and Technology Organization (RTO) into an SME to jointly work on a practical project objective—which is directly tailored to the demands of the SME. To evaluate the effectiveness of this approach in overcoming barriers related to finding the right collaboration partner, limited resources, and limited absorptive capabilities, we adopt the R&D Lifecycle Model as a theoretical framework. Our findings, using self-reported and objective data from 106 different projects in a structural equation model, highlight that most SMEs in the considered cluster environment not only successfully mastered a challenging topic in the context of industry 4.0 that immediately benefits the organization, but also engaged in new R&D projects to strengthen their scientific and technical human capital in the long term. Moreover, consistent with previous literature, we found that trust is the main driver within the R&D Lifecycle Model both in building capabilities and economic growth. Based on these insights, we consider a long and close secondment of scientists to SMEs as key for collaboration projects and discuss implications for research and future technology transfer approaches.


Children ◽  
2021 ◽  
Vol 8 (12) ◽  
pp. 1203
Author(s):  
Jill Edwards ◽  
Jenny Waite-Jones ◽  
Toni Schwarz ◽  
Veronica Swallow

Worldwide, the prevalence of chronic (or long-term) conditions in children and young people from birth to 18 years (children) is increasing. Promoting competent and effective self-management skills early in the trajectory is important to improve adherence to treatment and optimise quality of life. Successful self-management, therefore, requires parents and children who are developmentally able to develop a range of complex skills, including the use of digital technologies. This scoping review aimed to identify primary research investigating digital technologies for children and parents sharing self-management in childhood chronic illnesses. A comprehensive search of electronic databases was conducted. Nineteen papers were included, assessed for quality and methodological rigour using the Hawker tool and thematically analysed. Three themes were identified: (i) the feasibility and acceptability of using technology, (ii) the usability of technologies and (iii) the effect of technologies on adherence and self-management skills. The results indicate that technologies such as mobile apps and websites can assist the management of long-term conditions, are an acceptable method of delivering information and can promote the development of effective self-management skills by parents and children. However, future technology design must include children and parents in all stages of development.


2021 ◽  
Vol 5 (Supplement_1) ◽  
pp. 425-425
Author(s):  
Lyndsie Koon ◽  
Shraddha Shende ◽  
Wendy Rogers ◽  
Jenny Singleton ◽  
Megan Bayles

Abstract American Sign Language (ASL) is the primary form of communication for approximately 250,000 people in the U.S. (Mitchell et al., 2006). As these individuals age, they may experience challenges in their everyday activities. For example, ASL users rely on visual cues, but have age-related change in vision. Moreover, ASL users may need to utilize technology to communicate with non-ASL users, but the technology may not be suitable/usable for older adults. We explored these issues in the Aging Concerns, Challenges, and Everyday Solution Strategies (ACCESS) study, wherein we interviewed Deaf older adults (N=60) in ASL, who provided insights into unique, everyday challenges they encounter. We will focus on the technology solution strategies they incorporate to address and overcome challenges with daily activities. Understanding how participants think about, adapt, and utilize different technologies can inform future technology design to successfully support diverse, aging populations.


2021 ◽  
Vol 2136 (1) ◽  
pp. 012059
Author(s):  
Songlan Wang ◽  
Ji Zhang

Abstract In the continuous optimization of computer graphics, game engine and virtual reality have become the focus of research and innovation in the current technology field. Rendering is a core technology to show a variety of graphic effects, which has been attached great importance to and applied by the whole society. Nowadays, although the rendering of large-scale and complex scenes has a wide range of applications, the actual optimization requirements are very high. Therefore, in the future technology application and research and development, based on higher and higher technical requirements, it is necessary to improve the efficiency of actual rendering while ensuring or improving the rendering quality. Therefore, this paper studies how to use the algorithm to improve the efficiency of actual rendering, so as to provide a new basis for future computer graphics research.


Author(s):  
Fahimul Islam Sakib ◽  
Md. Azizul Hasan ◽  
Mainul Hossain

Abstract Negative capacitance (NC) effect in nanowire (NW) and nanosheet (NS) field effect transistors (FETs) provide the much-needed voltage scaling in future technology nodes. Here, we present a comparative analysis on the performance of NC-NWFETs and NC-NSFETs through fully calibrated, three-dimensional computer aided design (TCAD) simulations. In addition to single channel NC-NSFETs and NC-NWFETs, those, with vertically stacked NSs and NWs, have been examined for the same layout footprint (LF). Results show that NC-NSFETs can achieve lower subthreshold swing (SS) and higher ON-current (ION ) than NC-NWFET of comparable device dimensions. However, NC-NWFETs show slightly higher ION/IOFF ratio. Negative differential resistance (NDR) is found to be more pronounced in NC-NSFET, enabling these devices to attain a stronger drain-induced-barrier-rising (DIBR) and steeper SS for gate lengths as small as 10 nm. The results presented here can, therefore, provide useful insights for performance optimization of NC-NWFETs and NC-NSFETs, in ultra-scaled and high-density logic applications, for 7 nm and beyond technology nodes.


2021 ◽  
Vol 7 (Special) ◽  
pp. 11-11
Author(s):  
Dmitry Istomin ◽  
◽  
Andrey Ivanov

Digital innovation is increasingly being promoted as a practice that allows producers to tackle the challenges of reducing the impact of livestock on greenhouse gas emissions, meeting the growing needs of the population, and the welfare of animals and the environment. Today, digital technologies are being implemented in the livestock sector in different ways: automation technologies are popular among farmers, and not technologies for collecting or processing data for decision-making. There is a risk that, with a focus on the future, technology development will focus on livestock in corporate, large-scale industrial production and therefore will not address the barriers to integrated digital solutions development and access for smallholder farmers. If so, Agriculture 4.0 will play a more limited role in making food systems sustainable. Agriculture 4.0 developers must focus not only on developing the latest sensor or device, but on a more holistic perspective, including consideration of regulatory requirements, business model, recommendations and capacity development, to ensure implementation and ensure the sharing of the benefits of Agriculture 4.0 for all participants in the agricultural sector. Keywords: LIVESTOCK, DIGITAL AGRICULTURE, AGRICULTURE 4.0


Author(s):  
Bharath Sreenivasulu Vakkalakula ◽  
Narendar Vadthiya

Abstract Silicon (Si) nanosheet (NS) metal-oxide semiconductor field effect transistors (MOSFETs) are realized as an outstanding structure to obtain better area scaling and power performance compared to FinFETs. Si NS MOSFETs provide high current drivability due to wider effective channel (Weff) and maintain better short channel performance. Here, the performance of junctionless (JL) NS p-MOSFET was evaluated by invoking HfxTi1-xO2 gate stack. The device performance was enhanced using various spacer dielectrics and the electrical characteristics are presented. Moreover, the effect of NS width variation on ION/IOFF, SS, Vth is presented and the analog/RF metrics of the device are evaluated. The power analysis of NS MOSFET is presented with respect to the ITRS road map. Our investigation reveals that the device exhibits an ION/IOFF ratio of more than ~106 with NS widths of 10 to 30 nm, respectively. For high-performance applications, the device exhibits better performance (ION) with higher NS widths. However, the threshold voltage downfall leads to deterioration in subthreshold performance with an increase in NS widths. With Si3N4 as a spacer dielectric the device exhibits better static power consumption for the CMOS inverter. By careful control of NS width and effective usage of spacer dielectric ensures better p-MOSFET design for future technology nodes.


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