scholarly journals Taxonomic history, comparative morphology, and variation in Astrophytum myriostigma and its subspecies tulense (Cactaceae)

2021 ◽  
Vol 15 (2) ◽  
pp. 327-341
Author(s):  
Richard R. Montanucci ◽  
Klaus-Peter Kleszewski

Astrophytum myriostigma subsp. myriostigma and subsp. tulense are distinguished by both vegetative and reproductive characters. The stem of the nominotypical subspecies is broad and depressed becoming broadly cylindrical in age, reaching a known maximum height of ca. 52 cm. In subsp. tulense, the stem is relatively slen-der and columnar and can reach a maximum height of ca. 90 cm. Both taxa show variation in the angle and profile of the ribs. In the nominotypical subspecies, the ribs are usually obtuse with a rounded or angular profile, or moderately acute with an angular profile. In subsp. tulense, the ribs are typically moderately to very acute with an angular profile. There are exceptions to these generalities. Both taxa have a modal number of five ribs, and both have the tendency to insert additional ribs with age, although the tendency seems more pronounced in subsp. tulense. The flower of the nominotypical subspecies differs from that of subsp. tulense in having a significantly larger mean perianth diameter (P <= 0.01), a significantly higher mean number of stigma lobes (P <= 0.05), and more tepal rows (3–5 vs. 1–3). The color of the tepals is pale yellow to whitish yellow in subsp. tulense, but brighter yellow or golden yellow in the nominotypical subspecies. The seeds of the nominotypical subspecies are significantly larger (P <= 0.01) than the seeds of subsp. tulense. Morphological variation was studied in nine populations of the subsp. myriostigma and six populations of the subsp. tulense. The nominotypical subspecies displays rib angle and rib profile differences among individual plants within a population. Plants with a depressed stem and obtuse, rounded ribs are predominant at some localities. At other localities, plants with more moderately acute, angular ribs are predominant, or at least common. Populations of subsp. tulense show individual variation in stem morphology. The stem varies from attenuated (tapered) to non-attenuated and from relatively slender (diameter ca. 20% of height) to relatively broad (diameter ca. 77% of height). The plants from near Mama León and adjacent localities in Tamaulipas, have very robust stems and are the least typical of the columnar subspecies. The rela-tionships of this population to other columnar populations warrant further study. The population near Las Tablas, San Luis Potosí, shows considerable variation in the stem and rib morphology. Some plants resemble the nominotypical subspecies whereas others are similar morphologically to subsp. tulense. The perianth diameter is intermediate between those of the two subspecies. The evidence suggests that this is an area of past or ongoing hybridization between the two taxa; the question of hybridization warrants further investigation. Attenuated and non-attenuated stems are the result of differential rates of vertical and lateral growth due to cellular activity in the apical and lateral meristems, respectively. The attenuated (tapered) stem is produced by a gradually increasing lateral growth rate which remains slower than the vertical rate. A non-attenuated stem is produced by the lateral growth rate exceeding the vertical rate early in development, then stabilizing at some point and not surpassing the vertical rate.

Polymer ◽  
2006 ◽  
Vol 47 (21) ◽  
pp. 7601-7606 ◽  
Author(s):  
Koji Yamada ◽  
Kaori Watanabe ◽  
Kiyoka Okada ◽  
Akihiko Toda ◽  
Masamichi Hikosaka

2009 ◽  
Vol 257 (10) ◽  
pp. 2175-2181 ◽  
Author(s):  
Miho Kojima ◽  
Fabio Minoru Yamaji ◽  
Hiroyuki Yamamoto ◽  
Masato Yoshida ◽  
Takahisa Nakai

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Shin ◽  
D. B. Thomson ◽  
P. Q. Miraglia ◽  
S. D. Wolter ◽  
R. Schlesser ◽  
...  

ABSTRACTFree-standing single crystals of bulk GaN were grown via unseeded vapor phase transport at 1130°C on hexagonal BN surfaces via direct reaction of Ga with ammonia. The number of nucleation events was reduced and the crystal size increased by introducing the ammonia at high temperatures. The resulting crystals were either needles or platelets depending on the process variables employed. Low V/III ratios achieved via ammonia flow rates ≤ 75sccm and/or ammonia total pressures ≤ 430Torr favored lateral growth. The average lateral growth rate for the platelets was ∼50μm/hr; the average vertical growth rate for the needles was ∼500μm/hr. Growth rates in all other directions for each of these two morphologies were very low. Seeded growth of both needle and platelet crystals was also achieved; however, the growth rate decreased at longer times and higher pressures due to reaction with H2 from the increased decomposition of ammonia. Nitrogen dilution suppressed this decomposition. A 2mm × 1.5mm GaN crystal was grown with minimal decomposition in a 66.7%NH3 and 33.3%N2 gas mixture.


2012 ◽  
Vol 19 (4) ◽  
pp. 28-33 ◽  
Author(s):  
Guo-wei Chang ◽  
Shu-ying Chen ◽  
Qing-chun Li ◽  
Xu-dong Yue ◽  
Guang-can Jin

1998 ◽  
Vol 537 ◽  
Author(s):  
H. Marchand ◽  
J.P. Ibbetson ◽  
P.T. Fini ◽  
X.H. Wu ◽  
S. Keller ◽  
...  

AbstractWe demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <1010>-oriented stripes is initiated at a low V/II1 ratio to produce smooth, vertical {1120} sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the {1101} facets is inhibited using this two-step process, and that it is possible to maintain the {1120} sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.


2012 ◽  
Vol 19 (4) ◽  
pp. 312-316 ◽  
Author(s):  
Guo-wei Chang ◽  
Shu-ying Chen ◽  
Qing-chun Li ◽  
Xu-dong Yue ◽  
Guang-can Jin

1999 ◽  
Vol 4 (S1) ◽  
pp. 453-458 ◽  
Author(s):  
H. Marchand ◽  
J.P. Ibbetson ◽  
P.T. Fini ◽  
X.H. Wu ◽  
S. Keller ◽  
...  

We demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <100>-oriented stripes is initiated at a low V/III ratio to produce smooth, vertical <110> sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the <101> facets is inhibited using this two-step process, and that it is possible to maintain the <110> sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.


2001 ◽  
Vol 18 (8) ◽  
pp. 1135-1137 ◽  
Author(s):  
Shao Qing-Yi ◽  
Fang Rong-Chuan ◽  
Zhu Kai-Gui ◽  
Liao Yuan ◽  
Xue Zeng-Quan

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