Design and simulation of strip loaded and rib waveguide with integration of 2D material

Objective- To design Graphene-Silicon based rib waveguide and reduce the losses in the strip in order to meet the requirement for ultra-fast & ultrahigh optical bandwidth communication and computing in integrated optical devices. Method –Propagation losses and effective refractive index are the two key parameters. In order to meet the objective, the effects of Graphene for manufacturing passive devices/components in the field of Integrated Photonic like integrated optical waveguide have been analysed by measuring the changes in propagation losses and effective refractive index of the silicon photonics devices for operating at different wavelengths. Findings- We have presented the design and simulation of SOI (Silicon-on-Insulator) platforms with 2D layer materials (graphene) which has been used along with their mode of propagation, effective refractive index (ne f f ), propagation losses (dB/cm) and varying wavelength range for optimum performance. In addition to this, we have also calculated the boundary limit for both the speed and bandwidth. We also reported the development of Silicon rib waveguide, Graphene-Silicon based rib waveguide and Ge on SOI with graphene later at the top of strip waveguide.Minimum loss of strip waveguide is 2.9 dB/cm which has been obtained for Mid-IR wavelength generally used for high power mid- IR sensing.

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Performance of the Active Microring Resonator Based on SOI Rib Waveguide

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.462.375 ◽

2012 ◽

Vol 462 ◽

pp. 375-379

Author(s):

B. Mardiana ◽

A.R. Hanim ◽

H. Hazura ◽

S. Shaari ◽

P. Susthitha Menon ◽

...

Keyword(s):

Refractive Index ◽

Ring Resonator ◽

Refractive Index Change ◽

Electrical Signal ◽

Free Carrier ◽

Simulation Software ◽

Microring Resonator ◽

Silicon On Insulator ◽

Carrier Injection ◽

Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

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Experimental Extraction of Effective Refractive Index and Thermo-Optic Coefficients of Silicon-on-Insulator Waveguides Using Interferometers

Journal of Lightwave Technology ◽

10.1109/jlt.2015.2476603 ◽

2015 ◽

Vol 33 (21) ◽

pp. 4471-4477 ◽

Cited By ~ 16

Author(s):

Sarvagya Dwivedi ◽

Alfonso Ruocco ◽

Michael Vanslembrouck ◽

Thijs Spuesens ◽

Peter Bienstman ◽

...

Keyword(s):

Refractive Index ◽

Effective Refractive Index ◽

Silicon On Insulator

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Numerical analysis of effective refractive index sensor based on slot micro-ring and Bragg grating

International Journal of Modern Physics B ◽

10.1142/s0217979219502928 ◽

2019 ◽

Vol 33 (25) ◽

pp. 1950292

Author(s):

C. Y. Zhao ◽

P. Y. Chen ◽

L. Zhang

Keyword(s):

Refractive Index ◽

Effective Refractive Index ◽

Free Spectral Range ◽

Fdtd Method ◽

Bragg Gratings ◽

Measurement Range ◽

Silicon On Insulator ◽

Refractive Index Sensor ◽

Silicon Photonic ◽

On Chip

A novel design of a silicon-on-insulator (SOI)-based resonator based on slot micro-ring and Bragg gratings is presented. The corrugated Bragg gratings are structured on both sides of slot micro-ring waveguides. The variation of the effective refractive index is detected by monitoring the shift of the spectral of the resonator. The transmission spectrum and field distribution of the sensor structures are simulated using finite-difference time-domain (FDTD) method. With the combination of the Bragg gratings, the measurement range of the sensor significantly increases without the restriction of a free spectral range (FSR). Our proposed sensor design provides a promising candidate for on-chip integration with other silicon photonic element.

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Optimization of the Transverse Electric Photonic Strip Waveguide Biosensor for Detecting Diabetes Mellitus from Bulk Sensitivity

Journal of Healthcare Engineering ◽

10.1155/2021/6081570 ◽

2021 ◽

Vol 2021 ◽

pp. 1-8

Author(s):

Prasanna Kumaar S. ◽

Sivasubramanian A.

Keyword(s):

Diabetes Mellitus ◽

Silicon Nitride ◽

Transverse Electric ◽

Transverse Magnetic ◽

Silicon On Insulator ◽

Waveguide Width ◽

Te Mode ◽

Strip Waveguide ◽

Silicon Based ◽

Waveguide Surface

Diabetes mellitus is a chronic metabolic condition that affects millions of people worldwide. The present paper investigates the bulk sensitivity of silicon and silicon nitride strip waveguides in the transverse electric (TE) mode. At 1550 nm wavelength, silicon on insulator (SOI) and silicon nitride (Si3N4) are two distinct waveguides of the same geometry structure that can react to refractive changes around the waveguide surface. This article examines the response of two silicon-based waveguide structures to the refractive index of urine samples (human renal fluids) to diagnose diabetes mellitus. An asymmetric Mach–Zehnder interferometer has waveguide sensing and a reference arm with a device that operates in the transverse electric (TE) mode. 3D FDTD simulated waveguide width 800 nm, thickness 220 nm, and analyte thickness 130 nm give the bulk sensitivity of 1.09 (RIU/RIU) and 1.04 (RIU/RIU) for silicon and silicon nitride, respectively, high compared to the regular transverse magnetic (TM) mode strip waveguides. Furthermore, the proposed design gives simple fabrication, contrasting sharply with the state-of-the-art 220 nm wafer technology.

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