Ultralong free-standing single crystal perovskite microwires with extremely low dark current

Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.

Highly-Efficient thin Film LiNbO3 Surface Couplers Connected by Ridge-Waveguide Subwavelength Gratings

The ridge waveguide integrated grating couplers (GCs) in lithium niobate on insulator (LiNbO 3 , LNOI) were designed, fabricated and characterized. Two ends of the gratings structures were connected through the middle photonic rib-waveguide of a sub-micrometric-diameter, which was nanostructured with the geometry of side-wall corrugated subwavelength gratings structure. A high coupling efficiency of -5.1 dB for the best thin film LiNbO 3 (TFLN) grating coupler was measured at the telecommunication wavelength of 1561 nm for quasi-transverse-electric (TE) polarized signals, with a broad 3-dB optical bandwidth of wider than 95 nm. All the devices structure patterns for the integrated LNOI GCs could be simultaneously defined by one step of electron-beam lithography, and then easily fabricated by the dry-etching processes. This compact component exhibited magnificent performance, and might show the potential functionalities for the TFLN-based integrated optical waveguide devices.

Design and simulation of strip loaded and rib waveguide with integration of 2D material

Objective- To design Graphene-Silicon based rib waveguide and reduce the losses in the strip in order to meet the requirement for ultra-fast & ultrahigh optical bandwidth communication and computing in integrated optical devices. Method –Propagation losses and effective refractive index are the two key parameters. In order to meet the objective, the effects of Graphene for manufacturing passive devices/components in the field of Integrated Photonic like integrated optical waveguide have been analysed by measuring the changes in propagation losses and effective refractive index of the silicon photonics devices for operating at different wavelengths. Findings- We have presented the design and simulation of SOI (Silicon-on-Insulator) platforms with 2D layer materials (graphene) which has been used along with their mode of propagation, effective refractive index (ne f f ), propagation losses (dB/cm) and varying wavelength range for optimum performance. In addition to this, we have also calculated the boundary limit for both the speed and bandwidth. We also reported the development of Silicon rib waveguide, Graphene-Silicon based rib waveguide and Ge on SOI with graphene later at the top of strip waveguide.Minimum loss of strip waveguide is 2.9 dB/cm which has been obtained for Mid-IR wavelength generally used for high power mid- IR sensing.