scholarly journals Neutron Detection in the A2 Collaboration Experiment on Neutral Pion Photo-production on Neutron

KnE Energy ◽  
2018 ◽  
Vol 3 (1) ◽  
pp. 51 ◽  
Author(s):  
S A Bulychjov ◽  
A E Kudryavtsev ◽  
V V Kulikov ◽  
M A Martemianov ◽  
V E Tarasov ◽  
...  
Keyword(s):  
Neutral Pion ◽  
Detection Efficiency ◽  
Neutron Detection ◽  
Photon Detection ◽  
Deuterium Target ◽  
Production Study ◽  
Decay Photon ◽  
Electro Magnetic ◽  
Neutron Momentum ◽  
Photo Production

Neutron detection is of crucial importance for the neutral pion photo-production study on a neutron target that now is in progress at MAMI. Two electro-magnetic calorimeters, based on NaI and BaF2 crystals, are used in the A2 experiment. While these calorimeters are optimized for pion decay photon detection, they have a reason able efficiency for neutron detection also. The paper describes the method, which has been used to measure this efficiency using the same data taken for pion photo-production study on deuterium target with tagged photon been of 800 MeV maximal energy. The detection efficiency is a rising function of neutron momentum that reaches 40% near 1 GeV/c.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

Average neutron detection efficiency for DEMON detectors

2013 ◽  
Vol 709 ◽  
pp. 68-71 ◽  
Author(s):  
S. Zhang ◽  
W. Lin ◽  
M.R.D. Rodrigues ◽  
M. Huang ◽  
R. Wada ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Neutron Detection ◽  
Neutron Detection Efficiency ◽  
Average Neutron

Neutron detection efficiency of BGO calorimeter at GRAAL

2006 ◽  
Vol 562 (1) ◽  
pp. 85-91 ◽  
Author(s):  
O. Bartalini ◽  
V. Bellini ◽  
J.P. Bocquet ◽  
M. Capogni ◽  
M. Casano ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Neutron Detection ◽  
Neutron Detection Efficiency

Neutron Detectors Made From Chemically Vapour Deposited Semiconductors

1997 ◽  
Vol 487 ◽  
Author(s):  
F. Foulon ◽  
P. Bergonzo ◽  
A. Brambilla ◽  
C. Jany ◽  
B. Guizard ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Low Cost ◽  
Chemical Vapour ◽  
Polycrystalline Diamond ◽  
Neutron Detection ◽  
Large Area ◽  
Neutron Detectors ◽  
Gadolinium Isotope ◽  
Neutron Detection Efficiency ◽  
Hydrogenated Amorphous

AbstractIn this paper, we present the results of investigations on the use of semiconductors deposited by chemical vapour deposition (CVD) for the fabrication of neutron detectors. For this purpose, 20 μm thick hydrogenated amorphous silicon (a-Si:H) pin diodes and 100 μm thick polycrystalline diamond resistive detectors were fabricated. The detectors were coupled to a neutron-charged particle converter : a layer of either gadolinium or boron (isotope 10 enriched) deposited by evaporation. We have demonstrated the capability of such neutron detectors to operate at neutron fluxes ranging from 101 to 106 neutrons/cm2.s. The fabrication of large area detectors for neutron counting or cartography through the use of multichannel reading circuits is discussed. The advantages of these detectors include the ability to produce large area detectors at low cost, radiation hardness (∼ 4 Mrad for a-Si:H and ∼ 100 Mrad for diamond), and for diamond, operation at temperatures up to 500°C. These properties enable the use of these devices for neutron detection in harsh environments. Thermal neutron detection efficiency up to 22 % and 3 % are expected by coupling a-Si:H diodes and diamond detectors to 3 μm thick gadolinium (isotope 157) and 2 μm thick boron layers, respectively.

High photon detection efficiency single photon avalanche diode in 0.18 μm standard CMOS process

2017 ◽  
Vol 31 (17) ◽  
pp. 1750193 ◽  
Author(s):  
Wei Wang ◽  
Xiaoyuan Bao ◽  
Li Chen ◽  
Ting Chen ◽  
Guanyu Wang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Bias Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Process ◽  
Guard Ring ◽  
Reverse Bias Voltage ◽  
Photon Detection ◽  
Standard Cmos Process ◽  
Photon Detection Efficiency

This paper proposed a single photon avalanche diodes (SPADs) designed with 0.18 [Formula: see text] standard CMOS process. One of the major challenges in CMOS SPADs is how to raise the low photon detection efficiency (PDE). In this paper, the device structure and process parameters of the CMOS SPAD are optimized so as to improve PDE properties which have been investigated in detail. The CMOS SPADs are designed in p+/n-well/deep n-well (DNW) structure with the p-sub and the p-well guard ring (GR). The simulation results show that with the p-well GR, the quantum efficiency (QE) is about 80% with the breakdown voltage of 12.7 V, the unit responsivity is as high as 0.38 A/W and the PDE of 51% and 53% is obtained when the excess bias is at 1 V and 2 V, respectively. The dark count rate (DCR) is 6.2 kHz when bias voltage is 14 V. With the p-sub GR, the breakdown voltage is 13 V, the unit responsivity is up to 0.26 A/W, the QE is 58%, the PDE is 33% and 37% at excess bias of 1 V and 2 V, respectively. The DCR is 3.4 kHz at reverse bias voltage of 14 V.

scholarly journals Comparison of thermal neutron detection efficiency of 6 Li scintillation glass and 3 He gas proportional tube

2013 ◽  
Vol 37 (10) ◽  
pp. 106001
Author(s):  
Ming Xu ◽  
Zhi-Cheng Tang ◽  
Guo-Ming Chen ◽  
Jun-Quan Tao
Keyword(s):  
Thermal Neutron ◽  
Detection Efficiency ◽  
Neutron Detection ◽  
Neutron Detection Efficiency

Reflections on a photo-production study

2020 ◽  
pp. 113-132
Author(s):  
Steven D. Brown ◽  
Ava Kanyeredzi ◽  
Laura McGrath ◽  
Paula Reavey ◽  
Ian Tucker
Keyword(s):  
Production Study ◽  
Photo Production

A scalable single-photon avalanche diode with improved photon detection efficiency and dark count noise

Optik ◽  
2020 ◽  
Vol 212 ◽  
pp. 164692
Author(s):  
Dong Han ◽  
Yue Xu ◽  
Feiyang Sun ◽  
Fuming Song
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency
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