Mineral Associations of Veins with Quartz of the "Diamonds оf Donbass" Type in the Seleznevsky Coal-Bearing District (Folded Donbass)

2021 ◽  
pp. 66-72
Author(s):  
Oleg S. Krisak ◽  
Yuri V. Popov
Keyword(s):  
Low Temperature ◽  
Hydrothermal System ◽  
Third Order ◽  
Quartz Crystals ◽  
The Third ◽  
Hydrothermal Mineralization ◽  
Water Composition ◽  
Mineral Associations

The authors have established quartz and quartz-carbonate veins, the formation of which is associated with a low-temperature hydrothermal system of methane-water composition within the Seleznevsky coal-bearing region of the Folded Donbass. The article considers the features of localization of hydrothermal mineralization containing quartz with inclusions of hydrocarbons, and its potential ore content. It is established that the vein bodies are localized mainly in the near-hinge parts of the third-order brachianticlines in the central and marginal parts of the Seleznevskaya syncline. These veins form systems associated with the fracturing of the inter-layer stratification or intersecting the layers. Interplastic veins are subdivided into plate-like massive and vein-like bodies with a druze texture. The veins of the second type contain quartz crystals with hydrocarbon inclusions, referred to as "diamonds of Donbass". They form a paragenetic association with dickite. In addition, calcite in the form of short-prismatic crystals is a typical associated mineral in the vein bodies among limestone strata. In the veins among the sandstone layers, the association with goethite, oxides and hydroxides of manganese is developed. Two morphological types of cinnabar were found in the vein bodies on the basis of HMS sampling, the largest number is confined to the brachianticlines of the marginal parts of the Seleznevskaya syncline. The analysis of the results indicates the prospects for identifying mercury mineralization with quartz-dickite-cinnabar type of mineralization.

Self-starting mode locking of a Nd:glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs

1999 ◽  
Vol 24 (22) ◽  
pp. 1567 ◽  
Author(s):  
M. Leitner ◽  
P. Glas ◽  
T. Sandrock ◽  
M. Wrage ◽  
G. Apostolopoulos ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fiber Laser ◽  
Mode Locking ◽  
Third Order ◽  
The Third ◽  
Third Order Nonlinearity ◽  
Low Temperature Grown Gaas

scholarly journals THERMAL EFFECTS IN JAYNES–CUMMINGS MODEL DERIVED WITH LOW-TEMPERATURE EXPANSION

2011 ◽  
Vol 22 (10) ◽  
pp. 1015-1062 ◽  
Author(s):  
HIROO AZUMA ◽  
MASASHI BAN
Keyword(s):  
Perturbation Theory ◽  
Low Temperature ◽  
Thermal Effects ◽  
Temperature Limit ◽  
Rabi Oscillations ◽  
Third Order ◽  
Perturbative Approach ◽  
Thermal Equilibrium State ◽  
Temperature Expansion ◽  
The Third

In this paper, we investigate thermal effects of the Jaynes–Cummings model (JCM) at finite temperature with a perturbative approach. We assume a single two-level atom and a single cavity mode to be initially in the thermal equilibrium state and the thermal coherent state, respectively, at a certain finite low temperature. Describing this system with Thermo Field Dynamics formalism, we obtain a low-temperature expansion of the atomic population inversion in a systematic manner. Letting the system evolve in time with the JCM Hamiltonian, we examine thermal effects of the collapse and the revival of the Rabi oscillations by means of the third-order perturbation theory under the low-temperature limit, that is to say, using the low-temperature expansion up to the third-order terms. From an intuitive discussion, we can expect that the period of the revival of the Rabi oscillations becomes longer as the temperature rises. Numerical results obtained with the perturbation theory reproduce well this temperature dependence of the period.

Rheed Observations of Silicon (100) Surface Reconstruction after Remote Hydrogen Plasma Cleaning

1989 ◽  
Vol 146 ◽  
Author(s):  
T. Hsu ◽  
L. Breaux ◽  
B. Anthony ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Low Temperature ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Third Order ◽  
Silicon Epitaxy ◽  
The Third ◽  
Lower Temperature ◽  
Order Pattern

ABSTRACTLow temperature silicon epitaxy is critical to novel silicon-based devices requiring hyper-abrupt transitions in doping profiles or heterointerfaces. Epitaxy by Remote Plasma-Enhanced Chemical Vapor Deposition (RPCVD) consists of an in situ remote hydrogen plasma clean of the silicon surface followed by growth of silicon from silane at 220° - 400°C. Reconstruction of the silicon (100) surface from a (1×1) to a (2×1) structure after cleaning at 310°C is observed by RHEED, indicating an atomically clean surface. The removal of carbon and oxygen has been further substantiated by Auger Electron Spectroscopy (AES) and growth on these atomically clean substrates has produced good quality epitaxial films. Using remote hydrogen plasma cleans at lower temperature we report the first observation of third-order silicon surface reconstruction on a Si(100) surface, where two faint fractional order streaks between the sharp integral order streaks are observed. After a short (5 minute), low temperature (300-400 °C) anneal the third order pattern transforms rather quickly to a strong (2×1) reconstruction pattern. The third order pattern can then be restored by following the anneal with a repeat of the lower temperature hydrogen clean. Although the origin of the third order pattern is unclear at this time, we believe it is due to a Si-H complex formation at the silicon surface.

Probe size and 5th-order aberration

1987 ◽  
Vol 45 ◽  
pp. 134-135 ◽  
Author(s):  
Zhifeng Shao
Keyword(s):  
Electron Probe ◽  
Spherical Aberration ◽  
Wave Length ◽  
Cylindrical Symmetry ◽  
Electron Wave ◽  
Third Order ◽  
The Third ◽  
Probe Radius ◽  
Small Probe ◽  
Probe Size

A small electron probe has many applications in many fields and in the case of the STEM, the probe size essentially determines the ultimate resolution. However, there are many difficulties in obtaining a very small probe.Spherical aberration is one of them and all existing probe forming systems have non-zero spherical aberration. The ultimate probe radius is given byδ = 0.43Csl/4ƛ3/4where ƛ is the electron wave length and it is apparent that δ decreases only slowly with decreasing Cs. Scherzer pointed out that the third order aberration coefficient always has the same sign regardless of the field distribution, provided only that the fields have cylindrical symmetry, are independent of time and no space charge is present. To overcome this problem, he proposed a corrector consisting of octupoles and quadrupoles.

Children’s Recall of Approximations to English

1973 ◽  
Vol 16 (2) ◽  
pp. 201-212 ◽  
Author(s):  
Elizabeth Carrow ◽  
Michael Mauldin
Keyword(s):  
Language Development ◽  
Fourth Order ◽  
Third Order ◽  
Memory Processes ◽  
The Third ◽  
General Index ◽  
General Linguistic

As a general index of language development, the recall of first through fourth order approximations to English was examined in four, five, six, and seven year olds and adults. Data suggested that recall improved with age, and increases in approximation to English were accompanied by increases in recall for six and seven year olds and adults. Recall improved for four and five year olds through the third order but declined at the fourth. The latter finding was attributed to deficits in semantic structures and memory processes in four and five year olds. The former finding was interpreted as an index of the development of general linguistic processes.

scholarly journals Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu
Keyword(s):  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Laser Pulses ◽  
Third Harmonic Generation ◽  
High Repetition Rate ◽  
Third Order ◽  
Third Harmonic ◽  
The Third ◽  
High Repetition ◽  
Gan Crystal

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.

Boundary-Value Problems for Third-Order Lipschitz Ordinary Differential Equations

2014 ◽  
Vol 58 (1) ◽  
pp. 183-197 ◽  
Author(s):  
John R. Graef ◽  
Johnny Henderson ◽  
Rodrica Luca ◽  
Yu Tian
Keyword(s):  
Differential Equation ◽  
Differential Equations ◽  
Ordinary Differential Equations ◽  
Boundary Value Problems ◽  
Order Differential Equation ◽  
Boundary Value ◽  
Point Boundary ◽  
Third Order ◽  
Optimal Length ◽  
The Third

AbstractFor the third-order differential equationy′″ = ƒ(t, y, y′, y″), where, questions involving ‘uniqueness implies uniqueness’, ‘uniqueness implies existence’ and ‘optimal length subintervals of (a, b) on which solutions are unique’ are studied for a class of two-point boundary-value problems.

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