ABSTRACTWe have developed a fully self-aligned amorphous silicon TFT technology, which is suitable for large area image sensors and active matrix displays. Self-alignment is achieved by defining the top nitride by back exposure and then forming source and drain contacts by ionimplantation and silicidation. We incorporate a low resistance gate metallisation process, by using Al metal, capped by Cr. We have compared the process of forming the silicide after the ion-implantation step, with a new process of forming the silicide first and then implanting through the formed silicide. We find a significant advantage to the latter method, where we can achieve a higher doping level and reduced contact resistance. We have therefore optimised our process based on this method. Transistor characteristics as a function of channel length for both methods show the improved contact resistance, obtained with the latter method. We obtain field effect mobilities of 0.7cm2V−1s−1, measured in the saturated region, for a channel length of 8μm.
