scholarly journals Quantum Efficiency Effects on Modal Gain, Threshold Current and Threshold Current Density of PbSe/Pb0.934Sr0.066 Se Multiple Quantum Well Structure

2016 ◽  
Vol 12 (5) ◽  
pp. 607-611
Author(s):  
Majed Khodr
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Current Density ◽  
Multiple Quantum Well ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Modal Gain ◽  
Efficiency Effects ◽  
Gain Threshold

scholarly journals Numerical Design and Frequency Response of all group-IV alloys based MQW Transistor Laser

2021 ◽  
Author(s):  
Ravi Ranjan ◽  
Prakash Pareek ◽  
Mukul Kumar Das ◽  
Saurabh Kumar Pandey
Keyword(s):  
Frequency Response ◽  
Current Density ◽  
Multiple Quantum Well ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Photon Density ◽  
Multiple Quantum ◽  
Optical Confinement ◽  
Modal Gain ◽  
Transistor Laser

Abstract In this work, a theoretical model is developed for n-p-n mid-infrared transistor laser (TL) with strain-balanced Ge0.85Sn0.15 multiple quantum well (MQW) structure in the base. Variation of optical confinement factor, modal gain and threshold current density have been rigorously investigated for different number of QWs (N) in MQW structure. The result shows that overall optical confinement factor and modal gain increase with N. The frequency response of MQWTL for common base (CB) configuration is estimated from small signal relationship between the photon density and emitter current density by solving laser rate equation and continuity equation considering the virtual states as a conversion mechanism. Increment of N causes modulation bandwidth to initially increase and then decreases with N, which reveals a shifting of device nature for higher values of N. The results also suggest that on judicious selection of N, the proposed device can become a viable monolithic light source.

scholarly journals Лазеры на основе квантовых яма-точек, излучающие в оптических диапазонах 980 и 1080 nm

2019 ◽  
Vol 45 (4) ◽  
pp. 42
Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
Ю.М. Шерняков ◽  
Г.О. Корнышов ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Active Regions ◽  
Threshold Current ◽  
Threshold Current Density ◽  
New Type ◽  
Emitting Lasers

AbstractThe main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm^2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and 0.9 cm^–1), respectively.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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