Bidirectional Electric-induced Conductance based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-inspired Computing

Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2Te3)16 iPCM with a superlattice structure under optimized identical pulse trains. Based on atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2Te3)16 iPCM can achieve a desired resistance level using the pulse width. Therefore, we also fabricated a Ge2Sb2Te5 PCM and designed a pulse scheme based on the phase transition mechanism to compare to the (GeTe/Sb2Te3)16 iPCM. We designed an identical pulse scheme that implements linear and symmetrical LTP and LTD based on the iPCM mechanism. As a result, the (GeTe/Sb2Te3)16 iPCM showed relatively excellent synaptic characteristics by implementing gradual conductance modulation, a nonlinearity value of 0.32, and LTP/LTD 40 conductance states using identical pulses trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next generation non-volatile memory.

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Optical Switching of Coherent VO2 Precipitates Embedded in Sapphire

MRS Proceedings ◽

10.1557/proc-396-215 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 1

Author(s):

L. A. Gea ◽

L. A. Boatner ◽

J. D. Budai ◽

R. A. Zuhr

Keyword(s):

Phase Transition ◽

Vanadium Dioxide ◽

Thermal Processing ◽

Optical Switching ◽

Optical Transmission ◽

Structural Phase ◽

Switching Behavior ◽

New Type ◽

Single Crystal Sapphire ◽

Smart Surface

AbstractIn this work, we report the formation of a new type of active or “smart” surface that is produced by ion implantation and thermal processing. By co-implanting vanadium and oxygen into a single-crystal sapphire substrate and annealing the system under appropriate conditions, it was possible to form buried precipitates of vanadium dioxide that were crystallographically oriented with respect to the host AI2O3 lattice. The implanted VO2 precipitate system undergoes a structural phase transition that is accompanied by large variations in the optical transmission which are comparable to those observed for thin films of VO2 deposited on sapphire. Co-implantation with oxygen was found to be necessary to ensure good optical switching behavior.

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Volume Phase Transition Mechanism of Poly[di(ethylene glycol)ethyl ether acrylate]-Based Microgels Involving a Thermosensitive Poly(ionic liquid)

Langmuir ◽

10.1021/acs.langmuir.7b02884 ◽

2017 ◽

Vol 33 (43) ◽

pp. 12326-12335 ◽

Cited By ~ 6

Author(s):

Lan Ma ◽

Hui Tang ◽

Peiyi Wu

Keyword(s):

Phase Transition ◽

Ionic Liquid ◽

Ethylene Glycol ◽

Ethyl Ether ◽

Volume Phase Transition ◽

Volume Phase ◽

Transition Mechanism ◽

Poly Ionic Liquid ◽

Glycol Ethyl Ether

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Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

Journal of Materials Chemistry C ◽

10.1039/c6tc03607d ◽

2016 ◽

Vol 4 (46) ◽

pp. 10967-10972 ◽

Cited By ~ 35

Author(s):

Sujaya Kumar Vishwanath ◽

Jihoon Kim

Keyword(s):

Resistive Switching ◽

Retention Time ◽

Elevated Temperatures ◽

Switching Behavior ◽

Memory Devices ◽

Bipolar Switching ◽

Non Volatile Memory ◽

Volatile Memory ◽

Switching Characteristics ◽

Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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Heat and Mass Transfer of the Droplet Vacuum Freezing Process Based on the Diffusion-controlled Evaporation and Phase Transition Mechanism

Scientific Reports ◽

10.1038/srep35324 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 2

Author(s):

Zhijun Zhang ◽

Jingxin Gao ◽

Shiwei Zhang

Keyword(s):

Phase Transition ◽

Mass Transfer ◽

Heat And Mass Transfer ◽

Freezing Process ◽

Transition Mechanism ◽

Diffusion Controlled ◽

Vacuum Freezing

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Unexpectedly efficient absorption of low-concentration SO2 with phase-transition mechanism using deep eutectic solvent consisting of tetraethylammonium chloride and imidazole

Separation and Purification Technology ◽

10.1016/j.seppur.2022.120489 ◽

2022 ◽

pp. 120489

Author(s):

Ping Zhang ◽

Guangzhi Xu ◽

Mingzhen Shi ◽

Zongheng Wang ◽

Zhuoheng Tu ◽

...

Keyword(s):

Phase Transition ◽

Deep Eutectic Solvent ◽

Tetraethylammonium Chloride ◽

Low Concentration ◽

Transition Mechanism

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Correction to “Phase Structure and Phase Transition Mechanism for Light-Induced Ia3d Cubic Phase in 4′-n-Docosyloxy-3′-nitrobiphenyl-4-carboxlic acid/Ethyl 4-(4′-n-Docosyloxyphenylazo)benzoate Binary Mixture”

The Journal of Physical Chemistry B ◽

10.1021/jp509310h ◽

2014 ◽

Vol 118 (40) ◽

pp. 11862-11862

Author(s):

Ryo Hori ◽

Yohei Miwa ◽

Katsuhiro Yamamoto ◽

Shoichi Kutsumizu

Keyword(s):

Phase Transition ◽

Binary Mixture ◽

Phase Structure ◽

Cubic Phase ◽

Transition Mechanism

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Scaling behavior of oxide-based electrothermal threshold switching devices

Nanoscale ◽

10.1039/c7nr03865h ◽

2017 ◽

Vol 9 (37) ◽

pp. 14139-14148 ◽

Cited By ~ 11

Author(s):

Dasheng Li ◽

Jonathan M. Goodwill ◽

James A. Bain ◽

Marek Skowronski

Keyword(s):

Transition Metal ◽

Metal Oxides ◽

Transition Metal Oxides ◽

Scaling Behavior ◽

Switching Behavior ◽

Threshold Switching ◽

Non Volatile Memory ◽

Volatile Memory ◽

Switching Devices

Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application.

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Monoclinic–orthorhombic first-order phase transition in K2ZnSi5O12 leucite analogue; transition mechanism and spontaneous strain analysis.

Mineralogical Magazine ◽

10.1180/mgm.2021.67 ◽

2021 ◽

pp. 1-20

Author(s):

Anthony M.T. Bell ◽

Francis Clegg ◽

Christopher M.B. Henderson

Keyword(s):

Phase Transition ◽

Strain Analysis ◽

Phase Region ◽

Martensitic Transition ◽

Two Phase ◽

Spontaneous Strain ◽

First Order ◽

Transition Mechanism ◽

First Order Phase Transition ◽

Increasing Temperature

Abstract Hydrothermally synthesised K2ZnSi5O12 has a polymerised framework structure with the same topology as leucite (KAlSi2O6, tetragonal I41/a), which has two tetrahedrally coordinated Al3+ cations replaced by Zn2+ and Si4+. At 293 K it has a cation-ordered framework P21/c monoclinic structure with lattice parameters a = 13.1773(2) Å, b = 13.6106(2) Å, c = 13.0248(2) Å and β = 91.6981(9)°. This structure is isostructural with K2MgSi5O12, the first cation-ordered leucite analogue characterised. With increasing temperature, the P21/c structure transforms reversibly to cation-ordered framework orthorhombic Pbca. This transition takes place over the temperature range 848−863 K where both phases coexist; there is an ~1.2% increase in unit cell volume between 843 K (P21/c) and 868 K (Pbca), characteristic of a first-order, displacive, ferroelastic phase transition. Spontaneous strain analysis defines the symmetry- and non-symmetry related changes and shows that the mechanism is weakly first order; the two-phase region is consistent with the mechanism being a strain-related martensitic transition.

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