High-performance hysteresis-free perovskite transistors through anion engineering

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited owing to ion migration and large organic spacer isolation. Herein, we report high-performance and hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on crystallinity enhancement and vacancy suppression, realising a high hole mobility of 20 cm2 V−1 s−1, current on/off ratio exceeding 107, and threshold voltage of 0 V with high operational stability and reproducibility. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.