scholarly journals Coexistence of Nonvolatile Unipolar Memory and Volatile Threshold Resistance Switching In LaMnO3 Thin Films

2020 ◽  
Author(s):  
yanfeng Yin ◽  
ying Zhang ◽  
caihong Jia ◽  
weifeng Zhang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Negative Bias ◽  
Positive Bias ◽  
Computing Technology ◽  
Insulator Metal Transition

Abstract Coexistence of nonvolatile unipolar memory and volatile threshold resistive switching was observed in Pt/LaMnO 3 /Pt system. Specifically, nonvolatile unipolar memory was achieved by applying a negative bias, while volatile threshold resistive switching was obtained at a positive bias. The formation/rupture of conducting filaments and insulator-metal transition are supposed to induce nonvolatile unipolar memory and volatile threshold resistive switching, respectively. The convenient transition between nonvolatile and volatile switching by polarity is very useful for applications in in-memory computing technology.

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6668-6678 ◽  
Author(s):  
Ji-Wook Yoon ◽  
Jung Ho Yoon ◽  
Jong-Heun Lee ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Impedance Spectroscopy ◽  
Partial Oxidation ◽  
Resistive Switching ◽  
Spectroscopic Analysis ◽  
Bottom Electrode ◽  
Resistance Switching ◽  
Microscopic Level ◽  
Ac Impedance Spectroscopy ◽  
Bipolar Resistive Switching

Microscopic-level changes such as the dynamic evolutions in conducting filament, interfacial TiON region, and matrix phase during various steps of resistance switching were studied using AC impedance spectroscopy.

scholarly journals Unipolar resistive switching behavior in sol–gel synthesized FeSrTiO3 thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 54111-54116 ◽  
Author(s):  
Atul Thakre ◽  
Jyoti Kaswan ◽  
A. K. Shukla ◽  
Ashok Kumar
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Resistive Switching ◽  
Sol Gel ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Charge Retention ◽  
Resistance State ◽  
Unipolar Resistive Switching

A robust and reproducible resistance switching in iron substituted strontium titanate is reported which shows giant high to low resistance state ratio (∼105) and stable charge retention.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Improved Resistive Switching Properties of Solution Processed TiO[sub 2] Thin Films

2010 ◽  
Vol 13 (12) ◽  
pp. H443 ◽  
Author(s):  
Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
El Mostafa Bourim ◽  
Insung Kim ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Solution Processed

Interfacial resistive switching properties of Sr2TiO4/SrTiO3 heterojunction thin films prepared via sol-gel process

2021 ◽  
Author(s):  
Jun Li ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Sol Gel Process

Substrate bias effects during R-F sputtering of Y-Ba-Cu-O films

1990 ◽  
Vol 5 (4) ◽  
pp. 677-679 ◽  
Author(s):  
A. J. Drehman ◽  
M. W. Dumais
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Reactive Sputtering ◽  
Negative Bias ◽  
Superconducting Thin Films ◽  
Substrate Bias ◽  
Composition Control ◽  
Zero Resistance

Y-Ba-Cu-O films were made by R-F diode sputtering using a single oxide target. It was found that if a small negative bias is applied to the substrate, the etching associated with reactive sputtering is significantly reduced. This results in better composition control and uniformity, which are quite important for the formation of superconducting thin films. Films deposited on strontium titanate, when annealed in oxygen, become superconducting with zero resistance at 89 K.

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