Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

2021 ◽  
Author(s):  
Mohamed Samir Abdel-Latif ◽  
Abdallah Rezk ◽  
Ahmed Abdel-Moniem ◽  
Amr Hessein
Keyword(s):  
Electrical Properties ◽  
Crystallite Size ◽  
Solvothermal Method ◽  
Hall Effect Measurement ◽  
Sulfur Source ◽  
Optical And Electrical Properties ◽  
Secondary Phases ◽  
Bulk Carrier ◽  
Noticeable Effect ◽  
P Type

Abstract In this study, the synthesis of Cu2SnS3 (CTS) nanoparticles by solvothermal method using different sulfur precursors is reported. The influence of sulfur precursors on the structure, optical and electrical properties of prepared CTS material is investigated. The sulfur precursor sources have showed a noticeable effect on crystallite size, secondary phases, and resulted CTS nanoparticles structure. Among the four sulfur precursor sources used in this study, thiourea is the only sulfur source that produces CTS with a cubic structure and without the need for thermal treatment. Whereas after sulfurization at 580 ºC, all the four samples attained CTS nanoparticles with diverse properties. Changing the sulfur precursors have clear effects on crystallite size and optical bandgap prepared samples as they ranged from 11.21 to 21.23 nm and from 1.4 to 1.7 eV, respectively. Additionally, Hall effect measurement revealed that all CTS samples are p-type semiconductors with bulk carrier concentrations in 1018 order, which is suitable for various optoelectronic applications such as photovoltaics and photodetectors.

Optical and Electrical Properties of P-Type N-Doped ZnO Film

2014 ◽  
Vol 609-610 ◽  
pp. 113-117
Author(s):  
Ya Juan Sun ◽  
Wan Xing Wang
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Band Gap ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
High Quality ◽  
Doped Zno ◽  
P Type

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

The grain-boundary-related optical and electrical properties in polycrystalline p-type ZnO films

2006 ◽  
Vol 420 (4-6) ◽  
pp. 448-452 ◽  
Author(s):  
C.Y. Zhang ◽  
X.M. Li ◽  
X.D. Gao ◽  
J.L. Zhao ◽  
K.S. Wan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
P Type

Preparation and Evaluation of p-Type Materials for a-Si Solar Cells Using DC Plasma Discharge Deposition of Trimethylboron (B(CH3)3)

1989 ◽  
Vol 149 ◽  
Author(s):  
Benjamin F. Fieselmann ◽  
B. Goldstein
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Plasma Discharge ◽  
Optical And Electrical Properties ◽  
Dc Plasma ◽  
Doping Agent ◽  
Si Solar Cells ◽  
P Type ◽  
Amorphous Sic ◽  
Preparation And Evaluation

ABSTRACTAmorphous SiC p-layers doped with trimethylboron (B(CH3) 3) were prepared with optical and electrical properties superior to those prepared with B2H6. Devices were prepared with efficiencies as high as 11.4% using trimethyl boron. The improved properties of B(CH3)3-doped a-SiC result from the fact that trimethylboron is a more effective doping agent than B2H6 and produces p-layers with a higher bandgap.

Optical and Electrical Properties of Electrochemically Doped n- and p-Type Polythiophenes

1984 ◽  
Vol 23 (Part 2, No. 3) ◽  
pp. L189-L191 ◽  
Author(s):  
Keiichi Kaneto ◽  
Shogo Ura ◽  
Katsumi Yoshino ◽  
Yoshio Inuishi
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
P Type
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