The formation of orthorhombic SnS nanorods using CTAB in solvothermal method with its phase stability, optical and electrical properties

2020 ◽  
Vol 128 ◽  
pp. 110883 ◽  
Author(s):  
Benjamin Hudson Baby ◽  
Amrutha E. G. ◽  
Bharathi Mohan D.
2021 ◽  
Author(s):  
Mohamed Samir Abdel-Latif ◽  
Abdallah Rezk ◽  
Ahmed Abdel-Moniem ◽  
Amr Hessein

Abstract In this study, the synthesis of Cu2SnS3 (CTS) nanoparticles by solvothermal method using different sulfur precursors is reported. The influence of sulfur precursors on the structure, optical and electrical properties of prepared CTS material is investigated. The sulfur precursor sources have showed a noticeable effect on crystallite size, secondary phases, and resulted CTS nanoparticles structure. Among the four sulfur precursor sources used in this study, thiourea is the only sulfur source that produces CTS with a cubic structure and without the need for thermal treatment. Whereas after sulfurization at 580 ºC, all the four samples attained CTS nanoparticles with diverse properties. Changing the sulfur precursors have clear effects on crystallite size and optical bandgap prepared samples as they ranged from 11.21 to 21.23 nm and from 1.4 to 1.7 eV, respectively. Additionally, Hall effect measurement revealed that all CTS samples are p-type semiconductors with bulk carrier concentrations in 1018 order, which is suitable for various optoelectronic applications such as photovoltaics and photodetectors.


2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.


2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.


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