scholarly journals Ultra-wide bandgap semiconductor behavior of NaCaF3 fluoro-perovskite with external static isotropic pressure and its impact on optical properties: First-principles computation

Author(s):  
Syed Sajid Ali Gillani ◽  
Nisar Fatima ◽  
M. Shakil ◽  
R. Kiran ◽  
M. B. Tahir ◽  
...  

Abstract A comprehensive theoretical study to investigate the outcomes of externally applied static isotropic pressure (0 GPa - 50 GPa) on electronic, optical and structural properties of NaCaF3, using density functional theory (DFT) based CASTEP (Cambridge Serial Total Energy Package) code with ultra-soft pseudo-potential USP plane wave and Perdew Burke Ernzerhof (PBE) exchange-correlation functional of Generalized Gradient Approximation (GGA), is reported. The electronic bandgap shows the increasing trend 4.773 eV - 6.203 eV (direct bandgap) with increasing external pressure. The increase in bandgap is significant up to 20 GPa as compared to higher external pressures. The mystery of increasing band gap is nicely decoded by total density of states (TDOS) and elemental partial density of states (EPDOS). Optical properties have been calculated to analyze the impact of increment in band gap on them. We observed that highest peak of energy loss function L(w) shows the blue shift which confirms the increment of band gap. At zero photon energy, for 0 GPa, the static refractive index n(w) has value of 1.4456. After applying external pressure, there is a slight increase in n(w) which favors the semiconducting behavior of ternary compound. The energy points at which the absorption peak is maxima, the refractive index has lowest value.

2021 ◽  
Author(s):  
Abdehafid Najim ◽  
Omar BAJJOU ◽  
Mustapha BOULGHALLAT ◽  
Mohammed Khenfouch ◽  
Khalid Rahmani

Abstract Electronic and optical properties of graphene oxide (GO), under an external electric field (Eext) applied in three directions of space (x, y, z), are investigated using the density functional theory (DFT). The application of the Eext, causes a significant modifications to the electronic and optical properties of GO material. It has change the band gap, total density of states (TDOS), partial density of states (PDOS), absorption coefficient (α), dielectric function, optical conductivity, refractive index and loss function. The band gap of GO layer increases under the effects of the Eext, applied in x and y directions. On the other hand, for z direction, the band gap decreases by the effects of the Eext. The peaks of the TDOS around the Fermi level, change by the Eext applied in (x, y, z) directions. The α peaks of the GO sheet, decreases by the Eext applied in x direction, and increases if Eext applied in y and z directions. It is found that, the electronic and optical properties of GO layer, could be affected by the effects of the Eext and by its direction of application.


2020 ◽  
Vol 1010 ◽  
pp. 308-313
Author(s):  
Akeem Adekunle Adewale ◽  
Abdullah Chik ◽  
Ruhiyuddin Mohd Zaki

Barium titanate (BaTiO3) is a perovskite based oxides with many potential application in electronic devices. From experimental report BaTiO3 has wide energy band gap of about 3.4 eV which by doped with Ca and Zr at A- and B- sites respectively can enhance their piezoelectric properties. Using first principles method within the density functional theory (DFT) as implement in Quantum Espresso (QE) with the plane wave pseudo potential function, the influence of the Ca and Zr doping in BaTiO3 are studied via electronic properties: band structure, total density of states (TDOS) and partial density of states (PDOS). The energy band gap calculated was underestimation which is similar to other DFT work. Two direct band gap where observed in Ba0.875Ca0.125Ti0.875Zr0.125O3 sample at Γ- Γ (2.31 eV) and X- X (2.35 eV) symmetry point.


2015 ◽  
Vol 1104 ◽  
pp. 125-130 ◽  
Author(s):  
Fang Gui ◽  
Shi Yun Zhou ◽  
Wan Jun Yan ◽  
Chun Hong Zhang ◽  
Shao Bo Chen

The electronic structure and optical properties of V-doped CrSi2 have been calculated by using the first-principle peudo-potential plane-wave method based on the density functional theory.The parameters and properties of structure were given and the theory data were offered to research the effect of V doping into CrSi2. The calculations of energy band structure, total density of states, partial density of states of V-doped CrSi2were analysed. Fermi level enters into valence band which makes the V-doped CrSi2to be p-type semiconductor that improves the electrical conductivity of material. Additionally, the optical parameters of V-doped CrSi2were also discussed. It was found that both static dielectric constant and static refractive index increase after doping.


Author(s):  
Jalil Rehman ◽  
M.Awais Rehman ◽  
Muhammad Bilal Tahir ◽  
Muhammad Usman ◽  
Faisal Iqbal

This study addresses the first-principles analysis using generalized gradient approximation (GGA), which is pillared on density functional theory (DFT), to find the effects of silver (Ag) doping on SrTiO3 structurally, electronically and optical properties. As Ag doping into SrTiO3, we see a small decrease in the volume of unit cell. Moreover, Ag-doping adds new states in SrTiO3 at Brillouin zone symmetry points, transferring host material’s indirect band gap to a direct band gap. Ag doping in SrTiO3 results in the transfer density of states to smaller energies and increase in interaction among Ag atom and its surrounding atoms. Moreover, at the conduction band, the partial density of states (PDOS) of SrTiO3 changes generally. As a result, we conclude that Ag doping has an effect on the electronic band structure of SrTiO3. SrTiO3 doping with Ag has improved optical properties and its ability of converting to direct band gap results it in a perfect choice for optoelectronic applications.


Author(s):  
L. S. Taura ◽  
Isah Abdulmalik ◽  
A. S. Gidado ◽  
Abdullahi Lawal

Stanene is a 2D hexagonal layer of tin with exceptional electronic and optical properties. However, the semiconductor applications of stanene are limited due to its zero band-gap. However, doping stanene could lead to a band gap opening, which could be a promising material for electronic and optical applications. In this work, optimized structure, electronic band structure, real and imaginary parts of the frequency-dependent dielectric function, electron loss function, and refractive index of stanene substitutionally doped with alkaline earth metal (beryllium) were analyzed using density functional theory (DFT) calculations as implemented in the quantum espresso and yambo suites. A pure stanene has a zero band gap energy, but with the inclusion of spin-orbit coupling in the electronic calculation of pure stanene, the band-gap is observed to open up by 0.1eV. Doping stanene with beryllium opens the band-gap and shifts the Dirac cone from the Fermi level, the band gap opens by 0.25eV, 0.55eV, and 0.8eV when the concentration of Beryllium is 12.5%, 25%, and 37.5% respectively. The Dirac cone vanished when the concentration of the dopant was increased to 50%.  The Fermi level is shifted towards the valence band edge indicating a p-type material. The material absorption shows that SnBe absorption ranges in the visible to the ultraviolet region, The refractive index in stanene doped beryllium (SnBe) was found to be higher than that of pristine stanene, the highest refractive index was 9.2 at SnBe25%. In a nutshell, the results indicate that stanene can be a good material for electronic and optical applications if doped with beryllium.


2018 ◽  
Vol 32 (32) ◽  
pp. 1850357 ◽  
Author(s):  
M. U. Salma ◽  
Md. Atikur Rahman

In this paper, we have explored the physical, mechanical, chemical bonding, dialectical and thermodynamic properties of ARh2Ge2 (A = Ca, Sr, Y and Ba) theoretically for the first time. This investigation has been completed by density functional theory (DFT) calculations with the help of CASTEP code. The structural optimized factors of ARh2Ge2 (A = Ca, Sr, Y and Ba) are in excellent concurrence with the existing experimental data. The observed elastic constants are positive and prove the mechanical constancy for all these compounds. The calculated Pugh’s ratio and Poisson’s ratio show the ductile behaviors of Ca/YRh2Ge2 and brittleness behaviors of Sr/BaRh2Ge2, whereas the Cauchy pressure indicates the ductility for all these phases. The anisotropic factors, universal anisotropy indicator and fraction of anisotropy in compression and shear ensure the elastically anisotropic nature for all these phases. Bulk modulus and hardness values indicate that Sr/BaRh2Ge2 are soft and easily machinable in comparison with Y/CaRh2Ge2. The analysis of the band structure diagrams as well as density of states (total density of states and partial density of states) evidence the metallic behavior for all the compounds. The analysis of Mulliken bond populations and charge density maps give the existence of covalent and metallic bonding in these compounds. The optical properties point out that all phases can be used as coating materials at low energies. For all the phases the Debye temperatures have been calculated via elastic constant data. We have also evaluated the minimum thermal conductivity for these compounds. All compounds possess the relatively low minimum thermal conductivity with the low value of Debye temperatures which also evidence that all compounds could be applied like thermal fence covering material.


2012 ◽  
Vol 512-515 ◽  
pp. 883-889
Author(s):  
Qing Lin Xia ◽  
Liu Xian Pan ◽  
Yuan Dong Peng ◽  
Li Ya Li ◽  
Hong Zhong Wang ◽  
...  

we investigate the electronic structure, chemical bonding, optical and elastic properties of the novel rhenium nitrides, hexagonal phase re3n and re2n by using density-functional theory (dft) within generalized gradient approximation (gga). the calculated equilibrium lattice constants of both re3n and re2n are in reasonable agreement with the experimental results. the band structure along the higher symmetry axes in the Brillouin zone, the density of states (dos) and the partial density of states (pdos) are presented. the calculated energy band structures and dos show that re3n and re2n are metal compounds. The dos and pdos show that the dos at the fermi level (ef) is located at the bottom of a valley and originate mainly from the 5d electrons of re. population analyses suggest that the chemical bonding in re3n and re2n has predominantly covalent character with mixed covalent and ionic characteristics. the dielectric function, reflectivity, absorption coefficient, refractive index, electron energy-loss function and optical conductivity are presented in an energy range for discussing the optical properties of re3n and re2n. basic mechanical properties, such as elastic constants cij, bulk modulus b and shear modulus g are calculated. The young’s modulus e, poisson's ratio ν and bh/gh are also predicted. results conclude that the hexagonal phase re3n and re2n are mechanical stable and behaves in a ductile manner. polycrystalline elastic anisotropy is also derived from polycrystalline bulk modulus b and shear modulus g.


2017 ◽  
Vol 72 (4) ◽  
pp. 295-301 ◽  
Author(s):  
Li Li ◽  
Zhao-Yi Zeng ◽  
Ting Liang ◽  
Mei Tang ◽  
Yan Cheng

AbstractThe influence of pressure on the elastic and mechanical properties of the hexagonal transition-metal dichalcogenide WS2 is investigated using the first-principles calculations. With the increase in pressure, the lattice parameters and the volume of WS2 decrease, which is exactly in agreement with the available experimental data and other calculated results. The elastic constants Cij, bulk modulus B, shear modulus G, Young’s modulus E, and Poisson’s ratio σ of WS2 also increase with pressure. At last, for the first time, the band gaps of energy, the partial density of states, and the total density of states under three different pressures are obtained and analysed. It is found that the band gap of WS2 decreases from 0.843 to 0 eV when the external pressure varies from 0 to 20 GPa, which implies that WS2 may transform from semiconductors to semimetal phase at a pressure about 20 GPa.


Ground state properties of ATiO3 (A = Ca, Sr, Ba & Pb) pervoskite structures in cubic and tetragonal phase were studied by tight binding linear muffin-tin orbital (TB-LMTO) method in the framework of density functional theory (DFT) with the atomic-sphere approximation (ASA). The total energy of all the compounds come under the above said structures have shown that the cubic phase is the stable structure in the ambient condition. Among these pervoskites maximum bulk modulus was obtained for BaTiO3 . Direct (cubic) and indirect (tetragonal) band gap was observed from the band structure calculations and the values fall within the range of 1.5 – 1.7 eV. Electron distribution of each element in the valence and conduction bands was clearly obtained from the density of states (DOS) and partial density of states (PDOS) for all the compounds. The magnetization values were found in the range of 0.4 – 0.56 x 10-5µB. The‘d’ orbital position of Ti was observed for all the ABO3 compounds and shifted away from the Fermi level except for Ti in BaTiO3 . The refractive indices of the pervoskites were calculated from the energy band gap and the value is above 3 for all the compounds.


2020 ◽  
Vol 71 (6) ◽  
pp. 178-193
Author(s):  
Liao Chunfa ◽  
Xu Zhenxin ◽  
Zou Jianbai ◽  
Jiang Pinguoo

Based on the density functional theory, this paper presents the calculated cellular electronic properties of BiCl3, BiOCl and Bi3O4Cl, including unit cell energy, band structure, total density of states, partial density of states, Mulliken population, overlapping population, etc. Combined with the thermodynamic analysis of Bi3+ hydrolysis process in chlorine salt system, the conversion mechanism of oxychloride bond in BiCl3 to form BiOCl and Bi3O4Cl by hydrolysis, ethanololysis and ethylene glycol alcohololysis was obtained by infrared spectroscopy. The results indicate that the energy of Bi3O4Cl cell system was lower than that of BiOCl cell, indicating that the structure of Bi3O4Cl was more stable. From the analysis of bond fluctuation, the electron nonlocality in BiOCl belt was relatively large, and the orbital expansibility was strong; thus the structure of BiOCl was relatively active. The state density map of Bi3O4Cl had the widest energy gap, i.e., the covalent bond between Bi3O4Cl was stronger than BiOCl. Therefore, the hydrolysis of BiCl3 would preferentially generate Bi3O4Cl with a more stable structure. The number of charge arrangement, overlapping population and infrared spectrogram indicate that there were two basic ways in the hydrolysis and alcoholysis of BiCl3. Firstly, two chlorine atoms in BiCl3 were replaced by hydroxyl groups ionized by water and alcohol to form [Bi(OH)2Cl] monomer, and BiOCl and Bi3O4Cl were formed by intra-molecular dehydration or inter-molecular dehydration. The other way was that the Bi atom directly reacted with the OH ionized by water and alcohol to form the [Bi-OH] monomer, and the Cl atom replaced the H atom on the hydroxyl group in the [Bi-OH] monomer to further form BiOCl and Bi3O4Cl.


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