scholarly journals Numerical Simulations of Carrier-selective Contact Silicon Solar Cells: Role of Surface Passivation and Carrier-Selective Layers Electronic Properties

2021 ◽  
Author(s):  
KRISHNA SINGH ◽  
Dipak Kumar Singh ◽  
Vamsi K. Komarala
Keyword(s):  
Work Function ◽  
Open Circuit Voltage ◽  
Surface Passivation ◽  
Inversion Layer ◽  
Open Circuit ◽  
Rear Side ◽  
Cell Structures ◽  
Strong Inversion ◽  
A Cell

Abstract Ag/ITO/MoOx/n-Si/LiFx/Al carrier-selective contact (CSC) solar cell structures are modelled and numerically simulated based on the experimental data using an industrial quality base silicon wafer by the Sentaurus TCAD software. The role of (1) electron-selective lithium fluoride (LiFx) layer and its thickness, (2) hole-selective molybdenum oxide (MoOx) work function variation, and (3) front contact (MoOx/n-Si) surface passivation interlayer are explored on the device performance. The electron-selective LiFx layer at the rear side is led to the strong enhancement in device photocurrent by providing the electrical barrier to the minority carriers (holes) and slight improvement in open-circuit voltage, but the thickness of the layer is sensitive to efficient extraction of the majority carriers (electrons). The hole-selective MoOx layer work function needs to engineer for inducing the strong inversion layer with better built-in potential at the MoOx/n-Si junction to achieve high open-circuit voltage from a cell. A thin SiOx interlayer at the MoOx/n-Si junction has enhanced the device open-circuit voltage significantly by minimizing the minority carrier recombination at the interface.

Investigating the Role of Dye Dipole on Open Circuit Voltage in Solid-State Dye-Sensitized Solar Cells

2011 ◽  
Vol 50 (6) ◽  
pp. 06GF08 ◽  
Author(s):  
Shyam S. Pandey ◽  
Kyung-Young Lee ◽  
Azwar Hayat ◽  
Yuhei Ogomi ◽  
Shuzi Hayase
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Open Circuit Voltage ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

How charges separate: correlating disorder, free energy, and open-circuit voltage in organic photovoltaics

2019 ◽  
Vol 216 ◽  
pp. 236-251 ◽  
Author(s):  
Débora P. Mroczek ◽  
Vladimir Lankevich ◽  
Eric R. Bittner
Keyword(s):  
Free Energy ◽  
Density Of States ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Organic Polymer ◽  
Type Ii ◽  
Model Type ◽  
Polymer Photovoltaics ◽  
Energetic Disorder

In this paper, we discuss our recent efforts to correlate the role of density of states, entropy, and configurational and energetic disorder to the open-circuit voltage, VOC, of model type-II organic polymer photovoltaics.

717‐mV open‐circuit voltage silicon solar cells using hole‐constrained surface passivation

1994 ◽  
Vol 64 (2) ◽  
pp. 199-201 ◽  
Author(s):  
J. Zhao ◽  
A. Wang ◽  
A. Aberle ◽  
S. R. Wenham ◽  
M. A. Green
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Surface Passivation ◽  
Open Circuit ◽  
Silicon Solar Cells

Crucial Role of the Electron Transport Layer and UV Light on the Open-Circuit Voltage Loss in Inverted Organic Solar Cells

2017 ◽  
Vol 9 (39) ◽  
pp. 34131-34138 ◽  
Author(s):  
Aurélien Tournebize ◽  
Giorgio Mattana ◽  
Thérèse Gorisse ◽  
Antoine Bousquet ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Electron Transport ◽  
Organic Solar Cells ◽  
Crucial Role ◽  
Open Circuit Voltage ◽  
Uv Light ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Voltage Loss

Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces

2013 ◽  
Vol 205-206 ◽  
pp. 128-135 ◽  
Author(s):  
Andrew Findlay ◽  
Jacek Lagowski ◽  
Marshall Wilson ◽  
John D'Amico ◽  
Alexandre Savtchouk ◽  
...  
Keyword(s):  
Field Effect ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Dielectric Films ◽  
Saturation Current ◽  
Cause Analysis ◽  
Root Cause ◽  
Dielectric Charge

Recently introduced techniques for whole wafer mapping and imaging create new possibilities for root cause analysis of emitter passivation defects. Inline compatible PL imaging identifies such defects as localized regions with increased emitter saturation current and reduced implied open circuit voltage. Advanced offline evaluation of defective areas can be then performed with multiparameter noncontact measurements capable to establish the role of surface recombination, the interface trap density, or the dielectric charge that controls the field-effect passivation. The relevant novel metrologies are discussed and are illustrated using examples of advanced silicon passivation by dielectric films and by a-Si heterojunction structures.

Performance of μ-Si:H Solar Cells with Amorphous P-Layer

1998 ◽  
Vol 507 ◽  
Author(s):  
Frank Siebke ◽  
Shigeo Yata ◽  
Yoshihiro Hishikawa ◽  
Makoto Tanaka
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Silicon Layer ◽  
Amorphous Layer ◽  
Open Circuit ◽  
Optimized Design ◽  
Microcrystalline Silicon ◽  
Cell Structures ◽  
Proper Design

ABSTRACTWe investigated p-i-n solar cells with microcrystalline absorber but amorphous contact layers. Fill factor and open circuit voltage depend sensitively on the p/i interface. Using an optimized design of the p/i interface, cells with fill factors up to 65% and open circuit voltages of 0.45 V were deposited on amorphous p-layers. They are comparable to cells on micro- crystalline p-layers. A further increase of the open circuit voltage was achieved by variation of the p/i interface treatment but up to now it was accompanied by a decrease of the fill factor. We attribute this effect to a thin undoped amorphous layer at the p/i interface. Under non-optimized deposition conditions an amorphous instead of a microcrystalline silicon layer is grown at the p/i interface which can be detected by Raman measurements on cell structures. While the proper design of the p/i interface is crucial for the cell performance we did not observe significant differences between cells with amorphous and microcrystalline n-layers. The results reveal that the open circuit voltage is limited by the bulk properties of the undoped microcrystalline silicon.

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