scholarly journals Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Ka Band ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
State Capacitance

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

scholarly journals Design and Analysis of Shunt Configuration-Based RF MEMS Switch

2019 ◽  
Vol 8 (9) ◽  
pp. 2034-2039
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Beam Width ◽  
Switching Speed ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
State Capacitance

In this paper a shunt type RF MEMS switch design and analysis for tunable applications is presented. Switch works based on the electrostatic actuation principle. Theoretical calculated Switch parameters are compared with the electromechanical and electromagnetic simulation results. The effect of various materials like conductor and dielectrics & parameters like airgap, beam width on the electromechanical parameters of the switch is analyzed to get low pull-in voltage, high switching speed, better capacitance ratio, return loss, insertion loss, and isolation loss. The switch up and down state capacitance are 40.9fF and 4.45pF respectively. Down to up state capacitance ratio of this switch is 108.69. The designed switch has an actuation voltage of 32V. RF performance is simulated from 1-10GHz. In ON state switch has return loss of -35dB, insertion loss of -0.1dB. In the OFF-state switch has return loss of -1dB and an isolation loss of -11dB.

scholarly journals Design and Simulation of Capacitive MEMS Switch for Ka Band Application

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Vinay Bhatia ◽  
Sukhdeep Kaur ◽  
Kuldeep Sharma ◽  
Punam Rattan ◽  
Vishal Jagota ◽  
...  
Keyword(s):  
Frequency Band ◽  
Phase Shifter ◽  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
3D Structure ◽  
Structure Design ◽  
High Resistivity ◽  
Ka Band ◽  
Mems Switch

In this paper, RF MEMS switch with capacitive contact is designed and analyzed for Ka band application. A fixed-fixed beam/meander configuration has been used to design the switch for frequency band 10 GHz to 40 GHz. Electromagnetic and electromechanical analysis of three-dimensional (3D) structure/design has been analyzed in multiple finite element method (FEM) based full-wave simulator (Coventorware and high-frequency structure simulator). A comparative study has also been carried out in this work. The high resistivity silicon substrate ( tan δ = 0.010 , ρ > 8   k Ω − cm , ε r = 11.8 ) with a thickness of 675 ± 25   μ m has been taken for switch realization. The designed structure shows an actuation voltage of around 9.2 V. Impedance matching for the switch structure is well below 20 dB, loss in upstate, i.e., insertion loss >0.5 dB, and isolation of >25 dB throughout the frequency band is observed for the aforesaid structure. Furthermore, to increase the RF parameters, AIN dielectric material has been used instead of SiO2 resulting in capacitance in downstate that increases hence improved the isolation. The proposed switch can be utilized in various potential applications such as any switching/tunable networks phased-array radar, reconfigurable antenna, RF phase shifter, mixer, biomedical, filter, and any transmitter/receiver (T/R) modules.

Design of elliptical-shaped reconfigurable patch antenna with shunt capacitive RF-MEMS switch for satellite applications

2020 ◽  
pp. 1-10
Author(s):  
Bokkisam Venkata Sai Sailaja ◽  
Ketavath Kumar Naik
Keyword(s):  
Return Loss ◽  
Satellite Communication ◽  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Split Ring Resonator ◽  
Antenna Design ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Satellite Applications

Abstract In this paper, non-uniform meandered line shunt capacitive RF-MEMS switch is presented at an elliptical patch etched with a split-ring resonator (SRR) for satellite communication applications. The non-uniform meander line shunt capacitive is a fixed-fixed type of RF-MEMS switch that is introduced in this model antenna. The proposed antenna design is resonated at 10.46 GHz with the return loss of −37.6 dB. The performance evolution of the proposed antenna design is evaluated with and without integrated RF-MEMS switch on the proposed antenna SRR. It is observed that the proposed model at the ON-state switch resonates at 10.57 GHz frequency with the return loss of −30 dB. Similarly, at the OFF-state switch, it resonates at 10.53 GHz frequency with the return loss of −43 dB. Al3N4 (aluminum nitride) is used for the switch as a dielectric material, hence the switch attains higher isolation. The actuation voltage of 7.9 V is required for the switch to actuate from ON to OFF state. The switch attains minimum insertion and return loss which is discussed in further sections. The proposed antenna is fabricated and tested by a vector network analyzer; there is a good agreement between the simulated and measured results.

scholarly journals Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 390 ◽  
Author(s):  
Ke Han ◽  
Xubing Guo ◽  
Stewart Smith ◽  
Zhongliang Deng ◽  
Wuyu Li
Keyword(s):  
Rf Mems ◽  
Coplanar Waveguide ◽  
Metal Insulator ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
Switch Design ◽  
And Performance ◽  
Metallic Membrane

This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

2006 ◽  
Vol E89-C (12) ◽  
pp. 1880-1887 ◽  
Author(s):  
Y.-T. SONG ◽  
H.-Y. LEE ◽  
M. ESASHI
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch
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