scholarly journals Surface Texturing Behavior of Nano-copper Particles under Various Copper Salts System during Copper-assisted Chemical Etching

2021 ◽  
Author(s):  
Shihao Hong ◽  
Liang Ma ◽  
Xiuhua Chen ◽  
Shaoyuan Li ◽  
Wenhui Ma ◽  
...  
Keyword(s):  
Chemical Etching ◽  
High Efficiency ◽  
Etching Rate ◽  
Copper Particle ◽  
Silicon Wafers ◽  
Future Application ◽  
Copper Salts ◽  
Deposition Behavior ◽  
Copper Particles ◽  
Inverted Pyramid

Abstract In this work, the effects of different copper salts on the etching behavior of n-type monocrystalline silicon wafers were detailedly studied by Cu-assisted chemical etching method. Firstly, the inverted pyramid, inverted pyramid-like and oval pit texturing structures were obtained by HF/H2O2/Cu(NO3)2, HF/H2O2/CuSO4 and HF/H2O2/CuCl2 etching systems. Then, the evolution of copper particles deposition behavior was studied to reveal the influencing mechanism of different anion species, the textured wafer surfaces were characterized by scanning electron microscopy (SEM) and ultraviolet-visible (UV) spectrophotometer, the etching rate, silicon wafer thinning and the deposition amount of copper particle was systematically analyzed. We conclude that the binding force between anion and cation, the oxidation of anions and the formation of complex groups [CuCl2]− lead to great difference in the deposition behavior of copper, resulting in different etching morphology and etching rate. The moderate size copper particles deposited from HF/H2O2/Cu(NO3)2 system make that the etching process is mild and the anisotropic etching ability can fully demonstrated, and the regular inverted pyramid structures can be formed under low thinning of silicon wafers. This work will provide guidance for controllable preparation of inverted pyramid structure and future application in high efficiency solar cells.

Ultra-Thin Silicon Wafers Fabrication and Inverted Pyramid Texturing Based on Cu-Catalyzed Chemical Etching

Silicon ◽  
2020 ◽  
Author(s):  
Altyeb Ali Abaker Omer ◽  
Zudong He ◽  
Shihao Hong ◽  
Yuanchih Chang ◽  
Jie Yu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Silicon Wafers ◽  
Inverted Pyramid ◽  
Thin Silicon

Surface Texturing Behavior of Nano-Copper Particles under Copper-Assisted Chemical Etching with Various Copper Salts System

Silicon ◽  
2021 ◽  
Author(s):  
Shihao Hong ◽  
Yuxin Zou ◽  
Liang Ma ◽  
Xiuhua Chen ◽  
Shaoyuan Li ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Surface Texturing ◽  
Copper Salts ◽  
Copper Particles

Microfabricated Fiber Probe by Combination of Electric Arc Discharge and Chemical Etching Techniques

2012 ◽  
Vol 462 ◽  
pp. 38-41 ◽  
Author(s):  
Wan Maisarah Mukhtar ◽  
P. Susthitha Menon ◽  
Sahbudin Shaari
Keyword(s):  
Optical Fibers ◽  
Chemical Etching ◽  
Arc Discharge ◽  
Etching Rate ◽  
Electric Arc ◽  
Buffer Solution ◽  
Fiber Probe ◽  
Optical Fiber Probes ◽  
Electric Arc Discharge ◽  
Fiber Probes

In this study, optical fiber probes were fabricated by combination of electric arc discharge and chemical etching techniques. Size of tips diameters fabricated using different etching solutions were observed. When the optical fibers were pulled and heated by the electric arc discharge using a fusion splicer, fiber tips with few microns in diameter were obtained. To minimize the tips diameter, the pulled fiber probes were etched vertically for 10 minutes using two different etching solutions namely 49% HF and HF buffer solution (49% HF and 40% NH4F) with ratio of 2:1. A thick overlayer was added on top of the HF solution to prevent dangerous vapors escape to the environment. When the tapered part of the pulled fiber (FP1) was dipped into 49% HF solution, the diameter of tip was slightly decreased from 4.41μm to 1.31μm with etching rate of 5.17x10-3 μms-1. When the pulled fiber (FP2) was etched into HF buffer solution, the etching rate was increased up to 52.35% with the etching rate of 10.85x10-3μms-1. The tip diameter was reduced from 7.01μm to 468.9 nm in diameter. Combination of “heat and pull” technique with chemical etching by using HF buffer solution produced fiber probe with small tip diameter.

scholarly journals Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3179
Author(s):  
Qi Wang ◽  
Kehong Zhou ◽  
Shuai Zhao ◽  
Wen Yang ◽  
Hongsheng Zhang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Etching Rate ◽  
Surface Damage ◽  
Device Fabrication ◽  
Irreversible Damage ◽  
Catalytic Role ◽  
Metal Assisted Chemical Etching ◽  
Gan Etching

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

scholarly journals Проблемы при использовании травителя KOH-IPA для текстурирования кремниевых пластин

2020 ◽  
Vol 90 (10) ◽  
pp. 1758
Author(s):  
Н.А. Чучвага ◽  
Н.М. Кислякова ◽  
Н.С. Токмолдин ◽  
Б.А. Ракыметов ◽  
А.С. Серикканов
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Main Type ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Optimal Parameters ◽  
Crystal Silicon ◽  
High Efficiency Solar Cells ◽  
Wet Chemical ◽  
Manufacturing Techniques

The wet chemical treatment of monocrystalline silicon wafers, said method comprising texturing, represents one of the fundamental steps of manufacturing techniques of high-efficiency solar cells. As part of this work, methods for texturing single-crystal silicon wafers for solar cells were studied.As a result of studies, the optimal parameters of texturing technology for the studied samples were determined. The main type of etchant for texturing processes, which is a solution of KOH with isopropanol, is also determined.

Laser removal of copper particles from silicon wafers using UV, visible and IR radiation

2001 ◽  
Vol 73 (2) ◽  
pp. 219-224 ◽  
Author(s):  
J.M. Lee ◽  
C. Curran ◽  
K.G. Watkins
Keyword(s):  
Silicon Wafers ◽  
Ir Radiation ◽  
Copper Particles ◽  
Uv Visible
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