A New Strategy for Fabricating Low Haze p-Type Cui Film

Abstract As an intrinsic p-type transparent conductor with a wide band gap of 3.1 eV, γ-CuI full of potential has gradually attracted the attention of researchers. However, γ-CuI films deposited by various techniques generally present high haze with a frosted-glass-like appearance, significantly hampering the device’s performance. Herein, a new strategy is proposed, where truly p-type CuI thin films with low haze were successfully synthesized at room temperature. The specular transmittance of CuI film above 85% in the visible region (400-800 nm) can be achieved. The haze of the as-prepared γ-CuI films can be as low as 0.7%. Meanwhile, the as-prepared CuI film possesses a FOM as high as 230 MΩ -1 . This ideal stable p-type optoelectronic performance was a significant achievement among various typical p-type transparent conductive films.

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Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Scientific Reports ◽

10.1038/srep19537 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 16

Author(s):

Zhiqiang Liu ◽

Xiaoyan Yi ◽

Zhiguo Yu ◽

Guodong Yuan ◽

Yang Liu ◽

...

Keyword(s):

Hole Concentration ◽

Wide Band ◽

High Concentration ◽

Wide Band Gap ◽

Superlattice Structure ◽

Resonant States ◽

Effect Model ◽

New Strategy ◽

Order Of Magnitude ◽

P Type

Abstract In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

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Wide band gap and p-type conductive Cu-Nb-O films

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201105010 ◽

2011 ◽

Vol 5 (4) ◽

pp. 153-155 ◽

Cited By ~ 8

Author(s):

Seiji Yamazoe ◽

Shunsuke Yanagimoto ◽

Takahiro Wada

Keyword(s):

Band Gap ◽

Wide Band ◽

Wide Band Gap ◽

P Type

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Crystal structure, stability, and optoelectronic properties of the organic-inorganic wide-band-gap perovskite CH3NH3BaI3 : Candidate for transparent conductor applications

Physical Review B ◽

10.1103/physrevb.94.180105 ◽

2016 ◽

Vol 94 (18) ◽

Cited By ~ 31

Author(s):

Akash Kumar ◽

K. R. Balasubramaniam ◽

Jiban Kangsabanik ◽

Vikram ◽

Aftab Alam

Keyword(s):

Crystal Structure ◽

Band Gap ◽

Wide Band ◽

Optoelectronic Properties ◽

Structure Stability ◽

Transparent Conductor ◽

Wide Band Gap

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A pathway to p-type wide-band-gap semiconductors

Applied Physics Letters ◽

10.1063/1.3247890 ◽

2009 ◽

Vol 95 (17) ◽

pp. 172109 ◽

Cited By ~ 26

Author(s):

Anderson Janotti ◽

Eric Snow ◽

Chris G. Van de Walle

Keyword(s):

Band Gap ◽

Wide Band ◽

Wide Band Gap ◽

Wide Band Gap Semiconductors ◽

P Type

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Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

MRS Proceedings ◽

10.1557/proc-162-555 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 2

Author(s):

Koh Era ◽

Osamu Mishima

Keyword(s):

High Pressure ◽

High Temperature ◽

Boron Nitride ◽

Room Temperature ◽

Cubic Boron Nitride ◽

Visible Region ◽

Vibrational Structure ◽

Luminescence Properties ◽

Optoelectronic Applications ◽

P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

Applied Physics Letters ◽

10.1063/1.3130718 ◽

2009 ◽

Vol 94 (20) ◽

pp. 202103 ◽

Cited By ~ 231

Author(s):

Min-Ling Liu ◽

Fu-Qiang Huang ◽

Li-Dong Chen ◽

I-Wei Chen

Keyword(s):

Band Gap ◽

Thermoelectric Material ◽

Wide Band ◽

Wide Band Gap ◽

P Type

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GaN Based p-n Structures Grown on SiC Substrates

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300002015 ◽

1996 ◽

Vol 1 ◽

Cited By ~ 26

Author(s):

V.A. Dmitriev

Keyword(s):

Band Gap ◽

Bright Light ◽

Wide Band ◽

Injection Laser ◽

Light Emitters ◽

Wide Band Gap ◽

High Quality ◽

P Type

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

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Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.717.205 ◽

2013 ◽

Vol 717 ◽

pp. 205-209 ◽

Cited By ~ 1

Author(s):

Yuan Yuan Sun ◽

Xi He Zhang ◽

Qiu Rui Jia ◽

Zheng Li ◽

Shi Bo Liu

Keyword(s):

Optoelectronic Devices ◽

Wide Band ◽

Semiconductor Materials ◽

Wide Band Gap ◽

Preparation Technology ◽

Optimization Of Parameters ◽

Growth Method ◽

P Type ◽

Growth Quality ◽

Gan Film

GaN semiconductor was one of the most promising semiconductor materials with direct wide band gap transition. It was regarded as one of the most desirable materials to prepare short wavelength optoelectronic devices for the good optoelectronic properties and excellent mechanical behavior. In this paper, n and p-type GaN films were prepared on Al2O3 substrates by MOCVD. Through the optimization of parameters, we obtained effective in doped Mg and carrier concentration for 1019. MSM structural ultraviolet photoelectric devices were prepared on GaN film by two step epitaxy growth method. The highest transmittance and best epitaxial growth quality has been gained at 570°C for buffer layer of the samples.

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