scholarly journals (Ce, Gd):YAG-Al2O3 composite ceramics for high-brightness yellow light-emitting diode applications

Author(s):  
Xiaoyun Li ◽  
Jian Chen ◽  
Zhuguang Liu ◽  
Zhonghua Deng ◽  
Qiufeng Huang ◽  
...  

Abstract Gd3+ ions were doped in Ce:YAG ceramics as the phosphor material for the high-brightness yellow LED (565-590 nm). Besides the role of spectral modulation, the introduction of Gd3+ ions also exacerbates the thermal quenching effect. To increase its thermal performance, Al2O3 were introduced as the second phase and (Ce0.6%Y69.4%Gd30%)3Al5O12-z% Al2O3 (z=0, 10, 20, 30, 40) composite ceramics were fabricated by vacuum sintering. Their composite microstructures and phase structures were characterized. As the amount of Al2O3 increases from 0 wt% to 40 wt%, there is a noticeable improvement on the thermal conductivity. The thermal stability also increases and the operating temperature of ceramics reduced from 141.1 °C to 132.2 °C. Collaborating composite ceramics with InGaN blue chips, the steady-state luminous efficiency of 40 wt%-Al2O3 yellow LED reaches the highest value of 109.49 lm/W, which is 8.54 % higher than that of Al2O3-free sample. Additionally, scattering behavior and conversion efficiency of composite ceramics with different thicknesses were investigated.

2014 ◽  
Vol 61 (4) ◽  
pp. 71-78
Author(s):  
S.-J. Lee ◽  
H.-J. Park ◽  
J.-B. Park ◽  
D.-W. Jeon ◽  
J. H. Baek ◽  
...  

2007 ◽  
Vol 46 (No. 40) ◽  
pp. L960-L962 ◽  
Author(s):  
Kenji Iso ◽  
Hisashi Yamada ◽  
Hirohiko Hirasawa ◽  
Natalie Fellows ◽  
Makoto Saito ◽  
...  

2009 ◽  
Vol 24 (8) ◽  
pp. 2589-2595 ◽  
Author(s):  
Mei Zhang ◽  
Baohong Li ◽  
Jing Wang ◽  
Zhiyang Zhang ◽  
Qiuhong Zhang ◽  
...  

The influences of (SiN)+ and Eu2+ concentration on the optical properties of BaAl2−xSixO4−xNx:Eu2+ were investigated. The lifetime results show that there are two different cation sites occupied by Eu2+ ions and the energy transfer occurs between them. The Huang–Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forward-bias current of 20 mA was successfully fabricated on the basis of a structure consisting of BaAl2−xSixO4−xNx:Eu2+ phosphor and near-ultraviolet (∼395 nm) GaN chip.


2009 ◽  
Vol 21 (27) ◽  
pp. 2767-2770 ◽  
Author(s):  
Xiao-Mei Zhang ◽  
Ming-Yen Lu ◽  
Yue Zhang ◽  
Lih-J. Chen ◽  
Zhong Lin Wang

ACS Photonics ◽  
2016 ◽  
Vol 3 (10) ◽  
pp. 1912-1918 ◽  
Author(s):  
Guogang Zhang ◽  
Xu Guo ◽  
Fang-Fang Ren ◽  
Yi Li ◽  
Bin Liu ◽  
...  

2021 ◽  
Vol 29 (21) ◽  
pp. 34126
Author(s):  
Yu-Chen Zhang ◽  
Zhi-Yuan Yu ◽  
Xia-Yan Xue ◽  
Fei-Long Wang ◽  
Shuai Li ◽  
...  

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