Electron-Phonon Interaction, Transport and Ultrafast Processes in Semiconductor Microstructures

1992 ◽  
Author(s):  
Sankar Das Sarma
Keyword(s):  
Phonon Interaction ◽  
Ultrafast Processes ◽  
Electron Phonon Interaction

The simulation of the electron-phonon interaction in silicon

2018 ◽  
Vol 30 (12) ◽  
pp. 3-16
Author(s):  
A. Berezin ◽  
◽  
Yu. Volkov ◽  
M. Markov ◽  
I. Tarakanov ◽  
...  
Keyword(s):  
Phonon Interaction ◽  
Electron Phonon Interaction

Linear electron-phonon interaction in dye-doped polymers

1989 ◽  
Vol 162 (3) ◽  
pp. 217-220 ◽  
Author(s):  
S. Saikan ◽  
A. Imaoka ◽  
Y. Kanematsu ◽  
T. Kishida
Keyword(s):  
Linear Electron ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Polymers

scholarly journals Electron-phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles

2021 ◽  
Author(s):  
I. Yu. Sklyadneva ◽  
Rolf Heid ◽  
Pedro Miguel Echenique ◽  
Evgueni Chulkov
Keyword(s):  
Density Functional Theory ◽  
Double Layer ◽  
First Principles ◽  
Linear Response ◽  
Density Functional ◽  
Single Layer ◽  
Phonon Interaction ◽  
Functional Theory ◽  
Electron Phonon Interaction ◽  
The Density Functional Theory

Electron-phonon interaction in the Si(111)-supported rectangular √(7 ) ×√3 phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer √(7 ) ×√3 structures, it...

Pseudo-Anomalous Size-Dependent Electron–Phonon Interaction in Graded Energy Band: Solving the Fano Paradox

2021 ◽  
pp. 2044-2051
Author(s):  
Manushree Tanwar ◽  
Devesh K. Pathak ◽  
Anjali Chaudhary ◽  
Alexander S. Krylov ◽  
Herbert Pfnür ◽  
...  
Keyword(s):  
Energy Band ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Size Dependent

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

Non‐Local Electron‐Phonon Interaction in Naphthalene Diimide Derivatives, its Experimental Probe and Impact on Charge‐Carrier Mobility

2021 ◽  
pp. 2001281
Author(s):  
Mikhail V. Vener ◽  
Olga D. Parashchuk ◽  
Oleg G. Kharlanov ◽  
Dmitry R. Maslennikov ◽  
Dmitry I. Dominskiy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Local Electron ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Naphthalene Diimide ◽  
Non Local
Sign in / Sign up

Export Citation Format

Share Document