Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors

1999 ◽  
Author(s):  
Uwe Hommerich
2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.


2013 ◽  
Vol 87 (15) ◽  
Author(s):  
Yongfeng Li ◽  
Rui Deng ◽  
Weinan Lin ◽  
Yufeng Tian ◽  
Haiyang Peng ◽  
...  

2012 ◽  
Vol 545 ◽  
pp. 27-31 ◽  
Author(s):  
P.R.S. Wariar ◽  
V.R. Kumar ◽  
V.M. Nair ◽  
M.M. Yusoff ◽  
R. Jose ◽  
...  

A group of perovskites with general formula A2(RE,B)O6(A=Ba, Sr; RE=Rare-Earth; B=Sb, Zr) were synthesized as nanocrystals owing to the enhanced specific surface area that nanomaterials posses. These perovskites are characterized by varied crystal structure depends on the relative sizes of the cations occupying the A and B sites of the perovskite lattice. The new materials were either insulators or semiconductors. They possess moderate dielectric constant (~30) and relatively low dielectric loss (10-4); and therefore, they could be used as substrates in microwave circuits. Some of them falls to the semiconducting range with band gap ~3.3 eV; and therefore, could be used as transparent wide band gap semiconductors. Furthermore, the new perovskites were found to be chemically stable with two mostly considered high temperature ceramic superconductors for practical applications, viz. YBa2Cu3O7-δ(YBCO) and (Bi,Pb)2Sr2Ca2Cu3Ox(BSCCO).


Author(s):  
R.J. Graham

As a characterization technique for semiconductors, cathodoluminescence (CL) performed in TEM has several useful advantages over the more common SEM-based technique, the most important being that the acquisition of CL data from localized regions in an electron transparent specimen allows a correlation of microstructural and optical/electronic information. For example, it is possible to determine the distribution of low concentrations of optically active impurities and their possible association with defects, often at submicron resolution. Examples of TEM CL as a method of characterizing defects in semiconducting materials presented here are taken from wide band gap materials which are of current interest including CVD-grown diamond films and β-GaN on Si.


2001 ◽  
Vol 89 (2) ◽  
pp. 1130-1137 ◽  
Author(s):  
Minseo Park ◽  
C. W. Teng ◽  
V. Sakhrani ◽  
M. B. McLaurin ◽  
R. M. Kolbas ◽  
...  

2013 ◽  
Vol 48 (11) ◽  
pp. 3936-3942 ◽  
Author(s):  
Chunyan Zeng ◽  
Weixin Zhang ◽  
Bin Bin Li ◽  
Xiaofeng Xu ◽  
Christina F. de Souza ◽  
...  

2004 ◽  
Vol 158 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
R. Nédélec ◽  
R. Vianden ◽  

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