scholarly journals The Effect of Time-varying Substrate Temperature on Structural Properties of CdS Thin Films Produced by Ultrasonic Spray Pyrolysis

2020 ◽  
pp. 156-162
Author(s):  
Murat KALELİ ◽  
Celal Alp YAVRU
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Structural Properties ◽  
Ultrasonic Spray Pyrolysis ◽  
Time Varying ◽  
Ultrasonic Spray ◽  
Cds Thin Films

scholarly journals Characteristics of SnO<sub>2</sub>:F Thin Films Deposited by Ultrasonic Spray Pyrolysis: Effect of Water Content in Solution and Substrate Temperature

2012 ◽  
Vol 03 (10) ◽  
pp. 690-696 ◽  
Author(s):  
Mario A. Sánchez-García ◽  
Arturo Maldonado ◽  
Luis Castañeda ◽  
Rutilo Silva-González ◽  
María de la Luz Olvera
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Water Content ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Effect Of Water ◽  
Ultrasonic Spray

scholarly journals Structural and Photoelectrochemical Properties of Cu-Doped CdS Thin Films Prepared by Ultrasonic Spray Pyrolysis

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Rui Xie ◽  
Jinzhan Su ◽  
Mingtao Li ◽  
Liejin Guo
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Indium Tin Oxide ◽  
Ultrasonic Spray Pyrolysis ◽  
Annealing Treatment ◽  
Cost Effective ◽  
Photoelectrochemical Properties ◽  
Ultrasonic Spray ◽  
Cds Thin Films ◽  
P Type

Cu-doped CdS thin films of variable doping levels have been deposited on indium tin oxide-coated glass substrate by simple and cost-effective ultrasonic spray pyrolysis. The influences of doping concentration and annealing treatment on the structure and photoelectrochemical properties of the films were investigated. The deposited films were characterized by XRD, SEM, and UV-Vis spectra. Moreover, the films were investigated by electrochemical and photoelectrochemical measurements with regard to splitting water for solar energy conversion. The results showed that the Cu impurity can cause a structural change and red shift of absorption edge. It was found that the photocurrent can be improved by the Cu-doping process for the unannealed films under the weak illumination. The unannealed 5 at.% Cu-doped sample obtained the maximum IPCE, which achieved about 45% at 0.3 V versus SCE potential under 420 nm wavelength photoirradiation. In addition, the p-type CdS was formed with a doping of 4 at.%~10 at.% Cu after 450°C 2 h annealed in vacuum.

Deposition of ZnO:Al Thin Films by Ultrasonic Spray Pyrolysis

2010 ◽  
Vol 150-151 ◽  
pp. 1617-1620 ◽  
Author(s):  
Lin Dong ◽  
Teng Fei Pei ◽  
Hong Qing Li ◽  
Da Yan Xu
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Doping Level ◽  
Spray Pyrolysis Technique ◽  
Ultrasonic Spray Pyrolysis ◽  
Atmospheric Environment ◽  
Molar Ratio ◽  
Zno Films ◽  
Ultrasonic Spray

Transparent conducting Al-doped ZnO films were prepared by ultrasonic spray pyrolysis technique on amorphous glass substrates under atmospheric environment with substrate temperature ranging from 350 to 500 , and Al/ZnO molar ratio of 1, 3 and 5 %. The impacts of the substrate temperature and doping level on structural, optical and electrical properties of the ZnO:Al thin films were investigated. The texture coefficient calculated from XRD data indicates that the substrate temperature at 450 and the doping level of 3 at.% is beneficial for crystal growth along (002) orientation. The Band gap (Eg) and Urbach parameter (E0) deduced by the optical absorption edge increases and decreases with the increase of Al doping level, respectively. The increase in sheet resistance is assumed to be associated with the decrease in preferential orientation and formation of Al2O3-x clusters.

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