Characterization of an Atomic Hydrogen Source for Use in Charge Exchange Measurements

Atomic hydrogen has been found to have a great number of useful applications in the technological field of semiconducting materials. It has been used as a reagent in the epitaxial growth processes to control the incorporation of residual impurities. Atomic hydrogen can react with GaAs thus producing Ga- and As- hydrogen volatile species in controlled conditions. The atomic hydrogen can be produced in a chemical vapor deposition chamber using a hot tungsten filament. In this work we report the results of a study on GaAs layers grown using the close space vapor deposition technique with atomic hydrogen as a reagent. The conductivity type of the grown layers is closely related to the conductivity type of the GaAs source. We have grown p-type GaAs layers with l×1018 cm-3 hole concentration using GaAs sources with the same acceptor concentration. 10 K photoluminesence measurements were nlade on the source and the epitaxial GaAs layers. The PL spectra revealed that the residual impurities in the GaAs layers were originated from the source. The mirror like appearance of the grown layers as well as their electrical and optical characteristics demonstrate they can be used in the manufacture of GaAs semiconductor devices.

Download Full-text

Characterization of atomic hydrogen-etched HgCdTe surfaces

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00393-5 ◽

1998 ◽

Vol 191 (3) ◽

pp. 594-598 ◽

Cited By ~ 5

Author(s):

K.S Ziemer ◽

C.D Stinespring ◽

L.S Hirsch ◽

T.H Myers

Keyword(s):

Atomic Hydrogen

Download Full-text

Microstructure Characterization of Amorphous Silicon-Nitride Films by Effusion Measurements

MRS Proceedings ◽

10.1557/proc-0910-a06-05 ◽

2006 ◽

Vol 910 ◽

Cited By ~ 6

Author(s):

Wolfhard Beyer ◽

H.F.W. Dekkers

Keyword(s):

Solar Cells ◽

Atomic Hydrogen ◽

Antireflection Coating ◽

Compact Structure ◽

Silicon Nitride Films ◽

Si Solar Cells ◽

Defect Passivation ◽

Annealing Effects ◽

Substrate Temperatures

AbstractThe microstructure of a-Si:N:H films, which are applied as antireflection coating and for defect passivation in multicrystalline silicon (mc-Si) solar cells, was studied by gas effusion experiments. The results show for as-deposited material of low substrate temperatures (TS = 200 – 300°C) a predominant diffusion of molecular hydrogen for temperatures up to 800°C in agreement with the presence of interconnected openings (voids). At higher substrate temperatures, the material has a more compact structure and atomic hydrogen is the dominant diffusing species in the accessible temperature range. Annealing effects were also studied. The results are consistent with the concept that atomic hydrogen released from the a-Si:N:H coating serves for defect passivation in μc-Si solar cells.

Download Full-text