GROWTH AND CHARACTERIZATION OF p-Type GaAs LAYERS USING ATOMIC HYDROGEN AS A REAGENT

Atomic hydrogen has been found to have a great number of useful applications in the technological field of semiconducting materials. It has been used as a reagent in the epitaxial growth processes to control the incorporation of residual impurities. Atomic hydrogen can react with GaAs thus producing Ga- and As- hydrogen volatile species in controlled conditions. The atomic hydrogen can be produced in a chemical vapor deposition chamber using a hot tungsten filament. In this work we report the results of a study on GaAs layers grown using the close space vapor deposition technique with atomic hydrogen as a reagent. The conductivity type of the grown layers is closely related to the conductivity type of the GaAs source. We have grown p-type GaAs layers with l×1018 cm-3 hole concentration using GaAs sources with the same acceptor concentration. 10 K photoluminesence measurements were nlade on the source and the epitaxial GaAs layers. The PL spectra revealed that the residual impurities in the GaAs layers were originated from the source. The mirror like appearance of the grown layers as well as their electrical and optical characteristics demonstrate they can be used in the manufacture of GaAs semiconductor devices.

Download Full-text

Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1415 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1415-1426 ◽

Cited By ~ 46

Author(s):

Shinsuke Miyajima ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Nanocrystalline Silicon Carbide ◽

P Type

Download Full-text

Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1787 ◽

1994 ◽

Vol 33 (Part 1, No. 4A) ◽

pp. 1787-1792 ◽

Cited By ~ 4

Author(s):

Ting-Chang Chang ◽

Chun-Yen Chang ◽

Tz-Guei Jung ◽

Wen-Chung Tsai ◽

Guo-Wei Huang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Deposition Technique ◽

Strained Layer ◽

Chemical Vapor Deposition Technique ◽

Vapor Deposition Technique ◽

Strained Layer Superlattices

Download Full-text

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

MRS Proceedings ◽

10.1557/proc-415-31 ◽

1995 ◽

Vol 415 ◽

Cited By ~ 5

Author(s):

Baolin Zhang ◽

Yixin Jin ◽

Tianming Zhou ◽

Hong Jiang ◽

Yongqiang Ning ◽

...

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Hole Concentration ◽

Chemical Vapor ◽

Infrared Transmission ◽

Long Wavelength ◽

Measurement Results ◽

P Type ◽

Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

Download Full-text

Effect of Boron Doping on Microcrystalline Germanium Carbon Thin Films

MRS Proceedings ◽

10.1557/proc-0989-a05-04 ◽

2007 ◽

Vol 989 ◽

Cited By ~ 1

Author(s):

Yasutoshi YASHIKI ◽

Seiichi KOUKETSU ◽

Shinsuke MIYAJIMA ◽

Akira YAMADA ◽

Makoto KONAGAI

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Boron Doping ◽

Dark Conductivity ◽

Hot Wire ◽

Boron Doped ◽

Vapor Deposition Technique ◽

Type C ◽

P Type

AbstractEffects of boron doping on microcrystalline germanium carbon alloy (μc-Ge1-xCx:H) thin films have been investigated. We deposited boron-doped p-type μc-Ge1-xCx:H thin films by hot-wire chemical vapor deposition technique using hydrogen diluted monomethylgermane (MMG) and diborane (B2H6). A dark conductivity of 1.3 S/cm and carrier concentration of 1.7 x 1020 cm-3 were achieved with B2H6/MMG ratio of 0.1. Furthermore, the activation energy decreased from 0.37 to 0.037 eV with increasing B2H6/MMG ratio from 0 to 0.1. We also fabricated p-type μc-Ge1-xCx:H/n-type c-Si heterojunction diodes. The diodes showed rectifying characteristics. The typical ideality factor and rectifying ratio were 1.4 and 3.7 x 103 at ¡Ó 0.5 V, respectively.

Download Full-text

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.442.195 ◽

2010 ◽

Vol 442 ◽

pp. 195-201

Author(s):

F. Iqbal ◽

A. Ali ◽

A. Mehmood ◽

M. Yasin ◽

A. Raja ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Crystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Single Crystalline ◽

Type Silicon ◽

Vapor Deposition Technique ◽

Pressure Chemical ◽

P Type

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

Download Full-text