Microwave annealing of ion implanted 6H-SiC

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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Defects in ion implanted silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109070 ◽

1978 ◽

Vol 36 (1) ◽

pp. 386-387

Author(s):

J.A. Lambert ◽

P.S. Dobson

Keyword(s):

Defect Structure ◽

Dislocation Loops ◽

Frank Loop ◽

Burgers Vector ◽

Temperature Range ◽

Perfect Dislocation ◽

Contrast Analysis ◽

Image Position ◽

Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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A technique to prepare cross-sectional TEM specimens of semiconducting devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014508x ◽

1986 ◽

Vol 44 ◽

pp. 742-743

Author(s):

A. K. Rai ◽

P. P. Pronko

Keyword(s):

Thin Films ◽

Surface Region ◽

Sample Surface ◽

Specific Region ◽

Cross Sectional ◽

Thin Sections ◽

The Past ◽

Device Structures ◽

Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

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Microwave annealing of ion implanted 6H-SiC

Solid-state microwave annealing of ion-implanted 4H–SiC

Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing

Microwave Annealing of Ion Implanted 4H-SiC

Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC

Effective dopant activation via low temperature microwave annealing of ion implanted silicon

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

Dopant activation in ion implanted silicon by microwave annealing

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

Defects in ion implanted silicon

A technique to prepare cross-sectional TEM specimens of semiconducting devices

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