scholarly journals Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC

2007 ◽  
Vol 36 (4) ◽  
pp. 324-331 ◽  
Author(s):  
SIDDARTH G. SUNDARESAN ◽  
MULPURI V. RAO ◽  
YONGLAI TIAN ◽  
JOHN A. SCHREIFELS ◽  
MARK C. WOOD ◽  
...  
Keyword(s):  
Solid State ◽  
Furnace Annealing ◽  
Microwave Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

scholarly journals Microwave Annealing of Ion Implanted 6H-SiC

1996 ◽  
Vol 430 ◽  
Author(s):  
J. A. Gardner ◽  
M. V. Rao ◽  
Y. L. Tian ◽  
O. W. Holland ◽  
G. Kelner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Rapid Thermal Annealing ◽  
Photoluminescence Spectra ◽  
Furnace Annealing ◽  
Microwave Annealing ◽  
Conventional Furnace ◽  
Good Lattice ◽  
Lattice Damage ◽  
Conventional Furnace Annealing ◽  
Van Der Pauw

AbstractMicrowave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1400 °C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1600 °C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

Rapid Thermal Annealing of Ion Implanted GaAs and InP

1983 ◽  
Vol 23 ◽  
Author(s):  
K.V. Vaidyanathan ◽  
H.L. Dunlap
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Annealing Process ◽  
Electrical Activation ◽  
High Fluence ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

ABSTRACTThis paper discusses the properties of high intensity lamp-annealed silicon or beryllium-implanted GaAs and InP samples. We find this annealing process can result in efficient activation of dopants. Conventional furnace annealing at the same temperature does not result in increased electrical activation of the dopants. High fluence silicon implants can be activated in anneal times as short as 2 seconds, while low fluence silicon implants require more extended annealing. Activation of low fluence implants in GaAs depends strongly on the properties of the bulk semiinsulating material.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Rapid Optical Annealing for Improved GaAs Fet Uniformity

1985 ◽  
Vol 52 ◽  
Author(s):  
Thomas E. Kazior ◽  
Kamal Tabatabaie-Alavi
Keyword(s):  
Low Noise ◽  
Drift Mobility ◽  
Gate Length ◽  
Furnace Annealing ◽  
Zero Bias ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Performance Results ◽  
Doping Profiles ◽  
Excellent Reproducibility

ABSTRACTAn Eaton Nova Rapid Optical Annealer (ROA 400) has been used to activate n and n+ Si implants for use in power and low noise FET structures for GaAs MMIC's. PECVD SiN capped 3" SI GaAs wafers were annealed at temperatures ranging from 800 to 970 °C for times ranging from 0 (transient light pulse) to 20 sec. Doping profiles were determined using a Polaron concentration profiler; FATFET's were used for measuring drift mobility; and short gate (l.0μm gate length) FET's were fabricated to establish activation uniformity and to determine d.c. and r.f. performance. Results have indicated peak implant activation as high as 90% and electron mobilities of up to 4700cm2/V-sec for carrier concentrations of 1.3×1017/cm3 – results comparable to conventional furnace annealing. The most significant improvement of optical annealing comes in device uniformity. Saturated current uniformities of < ±3% have been achieved over 3" wafers with excellent reproducibility from wafer to wafer. Power FET structures with zero bias gm of 120mS/mm with uniformities of <±5mS/mm have been measured. R.f. measurements on these devices yielded output powers of >500mW/mm with power added efficiencies as high as 35%.

scholarly journals Solid-state microwave annealing of ion-implanted 4H–SiC

2007 ◽  
Vol 261 (1-2) ◽  
pp. 616-619 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Yong-lai Tian ◽  
Mark C. Ridgway ◽  
Nadeemullah A. Mahadik ◽  
Syed B. Qadri ◽  
...  
Keyword(s):  
Solid State ◽  
Microwave Annealing ◽  
Ion Implanted

Nitridation of vanadium in molecular nitrogen: a comparison of rapid thermal processing (RTP) and conventional furnace annealing

Vacuum ◽  
2001 ◽  
Vol 61 (2-4) ◽  
pp. 479-484 ◽  
Author(s):  
I Galesic ◽  
U Reusch ◽  
C Angelkort ◽  
H Lewalter ◽  
A Berendes ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Molecular Nitrogen ◽  
Rapid Thermal Processing ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing

A New Annealing Method to Obtain High Quality Poly-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Yoon-Ho Song ◽  
Jong-Tae Baek ◽  
Kee-Soo Nam ◽  
Sang-Won Kang
Keyword(s):  
Field Effect ◽  
Field Effect Mobility ◽  
High Quality ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Good Uniformity ◽  
Conventional Furnace Annealing ◽  
Annealing Method ◽  
Si Thin Film ◽  
Free Nucleus

ABSTRACTA new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

Quantum State in Solid-Phase Crystallization of a-Si:H by FA

2010 ◽  
Vol 44-47 ◽  
pp. 4154-4156
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xiang Ju Han ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Quantum States ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Different Temperatures ◽  
Conventional Furnace Annealing ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

Smooth Silicide Formation by Ion Beam Mixing of Ti/Si-Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
K. Kohlhof ◽  
S. Mantl ◽  
B. Stritzker
Keyword(s):  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Substrate Temperatures

AbstractIon beam mixing experiments of Ti-Si layers have been performed with Kr ions of 250 keV energy and doses ranging from 7 1015 to 7 1016 cm-2 at temperatures between liquid nitrogen temperature and 450°C. At substrate temperatures below 120°C no silicide formation could be detected. Only weak mixing at the Ti-Si interface is observed. At temperatures above 120°C the formation of TiSi2 could be verified by Rutherford backscattering and X-ray diffractometry. Layers of TiSi2 produced by ion beam mixing show smooth surfaces in contrast to those prepared by conventional furnace annealing. Those display rough surfaces and interfaces.

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