Preliminary proposal for investigations of liquid metal film bearings

We reported a stretchable and flexible radiation-shielding film based on room-temperature liquid metal. Conceptual experiments showed that the liquid metal based printing technology can achieve an ultrathin flexible radiation-shielding film with a thickness of 0.3 mm. Moreover, the yield strength and ultimate strength of the liquid metal film appear much better than those of a conventional lead-particle-containing radiation-shielding material. In order to evaluate the radiation-shielding performance of the liquid metal material, X-ray radiation experiments to compare the liquid metal film and conventional lead-particle-based shielding material under different stretching conditions were performed. The results indicate that the liquid metal shielding film could achieve a certain radiation-shielding performance. Furthermore, because of the screen-printing properties of liquid metal, a low-cost X-ray mask method using a liquid metal selective radiation-shielding film was also studied, which could serve as a highly efficient and practical method for the medical X-ray shielding applications or semiconductor lithography industry.

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The state of the metal film covering the needle of a liquid metal indium ion source

Vacuum ◽

10.1016/0042-207x(94)90222-4 ◽

1994 ◽

Vol 45 (9) ◽

pp. 973-976

Author(s):

HM Fehringer ◽

FG Rüdenauer ◽

A Sieber ◽

W Steiger

Keyword(s):

Liquid Metal ◽

Metal Film ◽

Ion Source ◽

The State ◽

Indium Ion

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Effect of a moving liquid-metal film on pyrolysis of naphtha fractions

Chemistry and Technology of Fuels and Oils ◽

10.1007/bf00723853 ◽

1988 ◽

Vol 24 (11) ◽

pp. 477-482

Author(s):

G. V. Mamontov ◽

I. V. Beletskii ◽

V. A. Pozdnyakov ◽

A. D. Reznikov ◽

Yu. M. Zhorov

Keyword(s):

Liquid Metal ◽

Metal Film ◽

Moving Liquid

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Light Induced Etching Of Gaas In A Zinc Atmosphere

MRS Proceedings ◽

10.1557/proc-17-65 ◽

1982 ◽

Vol 17 ◽

Author(s):

R.P. Salathe ◽

G. Baskhara Rao

Keyword(s):

Liquid Metal ◽

Thermal Diffusion ◽

High Temperatures ◽

Laser Power ◽

Metal Film ◽

Etch Depth ◽

Semiconductor Surface ◽

Etch Pits ◽

Gaas Substrates ◽

Surface Reflectivity

ABSTRACTN-type GaAs substrates have been exposed to zinc atmospheres at 600 – 800 deg.C and focused light from a Krion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2 – 10 KW/cm2 and exposure times of 5 – 60 minutes. They are characterized by a smooth profile with typical diameters of 50 – 80μm and depths of 0.1 – 50 μ The etch depth depends strongly on the laser power and on the zinc and arsenic vapor concentrations. The onset of etching is characterized by an increase in surface reflectivity of up to 10 per cent which is probably due to the formation of a thin liquid metal film. The growth of this film is initiated by optically generated holes at the semiconductor surface. The film is not saturated and dissolves GaAs from the substrate. In addition to etching, thermal diffusion of zinc can be observed in samples subjected to long exposure times or high temperatures.

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