Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

2013 ◽  
Vol 6 (3) ◽  
pp. 253-257 ◽  
Author(s):  
Sergey Brantov ◽  
Dmitry Borisenko ◽  
Ivan Shmytko ◽  
Edward Steinman
Keyword(s):  
Silicon Carbide ◽  
Carbon Foil ◽  
Carbide Layer

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

2019 ◽  
Vol 61 (12) ◽  
pp. 2386-2391 ◽  
Author(s):  
O. N. Sergeeva ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
T. S. Il’ina ◽  
S. A. Kukushkin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Silicon Substrate ◽  
Carbide Layer

Suppression of Local Heating on a Silicon Carbide Layer by Means of Divided Potentials

1984 ◽  
Vol EI-19 (4) ◽  
pp. 294-302 ◽  
Author(s):  
K. Kimura ◽  
M. Tsukiji ◽  
T. Tani ◽  
S. Hirabayashi
Keyword(s):  
Silicon Carbide ◽  
Local Heating ◽  
Carbide Layer

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

2017 ◽  
Vol 59 (2) ◽  
pp. 399-402 ◽  
Author(s):  
V. V. Antipov ◽  
S. A. Kukushkin ◽  
A. V. Osipov
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Cadmium Telluride ◽  
Carbide Layer

Effect of an intermediate silicon carbide layer on the reaction of a carbon filter with nickel

1976 ◽  
Vol 15 (10) ◽  
pp. 772-774
Author(s):  
S. E. Salibekov ◽  
A. A. Zabolotskii ◽  
V. S. Kilin ◽  
V. A. Turchenkov ◽  
N. P. Ignatova
Keyword(s):  
Silicon Carbide ◽  
Carbide Layer ◽  
Carbon Filter

Silica gel-coated silicon carbide layer deposited by atmospheric plasma spraying

2020 ◽  
Vol 110 ◽  
pp. 173-181
Author(s):  
Geng-Sheng Lin ◽  
Yu-Cheng Liu ◽  
Ramasamy Anbarasan ◽  
Keizo Nakagawa ◽  
Tomohisa Yoshioka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Spraying ◽  
Silica Gel ◽  
Atmospheric Plasma Spraying ◽  
Atmospheric Plasma ◽  
Carbide Layer

Construction and Application of Environmental Cell

1972 ◽  
Vol 30 ◽  
pp. 614-615 ◽  
Author(s):  
A. Fukami ◽  
M. Katoh
Keyword(s):  
Silicon Carbide ◽  
Carbon Layer ◽  
Objective Lens ◽  
Window Frame ◽  
Carbide Layer ◽  
Key Points ◽  
Environmental Cell ◽  
Grid Technique ◽  
Window Film ◽  
The Difference

The key points of constructing an environmental cell are an environmental window frame which transmits electron beam from vacuum to the cell, and an environmental window film put on the frame.From our experimental results, the window frame is made from a copper aperture having a 300 μmϕ hole covered with a copper screen having 40 μmϕ holes, and the window film is made from doubly vacuum-evaporated film which consists of carbon layer (350 Å in thickness, facing to vacuum side) and silica or silicon carbide layer (150 Å, facing to atmospheric side), using the micro grid technique developed by us). Carbon layer has high mechanical strength against to the difference in pressure between in and out of the cell (0.01 to 760 Torr.), and silica or silicon carbide layer has desirable durability for electron irradiation in gases. The thickness of atmospheric space is controled by a spacer (10 to 200 μm), and a specimen is generally put on the window film facing to the objective lens.

Formation Mechanism of Porous Silicon Carbide Ceramic Synthesized by Coat-Mix Process

2011 ◽  
Vol 284-286 ◽  
pp. 1412-1416 ◽  
Author(s):  
Hong Sheng Zhao ◽  
Zhong Guo Liu ◽  
Kai Hong Zhang ◽  
Zi Qiang Li ◽  
Xiao Xue Liu
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Formation Mechanism ◽  
Liquid Silicon ◽  
Carbon Surface ◽  
Porous Silicon Carbide ◽  
Carbide Layer ◽  
Carbide Ceramics ◽  
Silicon Carbide Particles ◽  
Silicon Carbide Ceramics

Porous silicon carbide ceramics were prepared by coat mix process using silicon powders and phenolic resin as silicon and carbon resource. The formation mechanism of silicon carbide was proposed based on the liquid silicon infiltration mechanism, reaction dynamics and thermodynamics analysis. Results show that the formation of silicon carbide by the coat mix process includes the following phases. 1) Infiltration of liquid silicon into porous carbon gap. 2) Formation of silicon carbide particles through the contact and reaction between liquid silicon and silicon surface. 3) Fracture and falling off of silicon carbide layer from the carbon surface. 4) Formation of new silicon carbide layer and particles. 5) The repetition of phase 3) and phase 4) till the reaction is complete and the porous silicon carbide ceramics are formed.

Sign in / Sign up

Export Citation Format

Share Document