scholarly journals Photonic Integration by Hybrid Silicon/Silica Waveguide Systems

2020 ◽  
Vol 42 (3) ◽  
pp. 245
Author(s):  
Hirohito YAMADA
Keyword(s):  
Photonic Integration ◽  
Hybrid Silicon

scholarly journals Hybrid Multisite Silicon Neural Probe with Integrated Flexible Connector for Interchangeable Packaging

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2605
Author(s):  
Ashley Novais ◽  
Carlos Calaza ◽  
José Fernandes ◽  
Helder Fonseca ◽  
Patricia Monteiro ◽  
...  
Keyword(s):  
Fabrication Process ◽  
High Signal ◽  
Wafer Level ◽  
Neural Probes ◽  
Insertion Force ◽  
Precise Integration ◽  
Flexible Cable ◽  
Flexible Polymer ◽  
Hybrid Silicon

Multisite neural probes are a fundamental tool to study brain function. Hybrid silicon/polymer neural probes combine rigid silicon and flexible polymer parts into one single device and allow, for example, the precise integration of complex probe geometries, such as multishank designs, with flexible biocompatible cabling. Despite these advantages and benefiting from highly reproducible fabrication methods on both silicon and polymer substrates, they have not been widely available. This paper presents the development, fabrication, characterization, and in vivo electrophysiological assessment of a hybrid multisite multishank silicon probe with a monolithically integrated polyimide flexible interconnect cable. The fabrication process was optimized at wafer level, and several neural probes with 64 gold electrode sites equally distributed along 8 shanks with an integrated 8 µm thick highly flexible polyimide interconnect cable were produced. The monolithic integration of the polyimide cable in the same fabrication process removed the necessity of the postfabrication bonding of the cable to the probe. This is the highest electrode site density and thinnest flexible cable ever reported for a hybrid silicon/polymer probe. Additionally, to avoid the time-consuming bonding of the probe to definitive packaging, the flexible cable was designed to terminate in a connector pad that can mate with commercial zero-insertion force (ZIF) connectors for electronics interfacing. This allows great experimental flexibility because interchangeable packaging can be used according to experimental demands. High-density distributed in vivo electrophysiological recordings were obtained from the hybrid neural probes with low intrinsic noise and high signal-to-noise ratio (SNR).

scholarly journals A Review on Terahertz Technologies Accelerated by Silicon Photonics

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
Large Scale ◽  
Cost Effective ◽  
Single Chip ◽  
Photonic Integrated Circuit ◽  
Hybrid Silicon ◽  
The Cost ◽  
Silicon Based ◽  
Thz Applications

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

scholarly journals Optoelectronic frequency-modulated continuous-wave terahertz spectroscopy with 4 THz bandwidth

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lars Liebermeister ◽  
Simon Nellen ◽  
Robert B. Kohlhaas ◽  
Sebastian Lauck ◽  
Milan Deumer ◽  
...  
Keyword(s):  
Fiber Optics ◽  
Continuous Wave ◽  
Dynamic Range ◽  
Terahertz Spectroscopy ◽  
Beat Signal ◽  
Photonic Integration ◽  
Terahertz Time Domain Spectroscopy ◽  
Destructive Testing ◽  
Optical Delay ◽  
Broadband Terahertz

AbstractBroadband terahertz spectroscopy enables many promising applications in science and industry alike. However, the complexity of existing terahertz systems has as yet prevented the breakthrough of this technology. In particular, established terahertz time-domain spectroscopy (TDS) schemes rely on complex femtosecond lasers and optical delay lines. Here, we present a method for optoelectronic, frequency-modulated continuous-wave (FMCW) terahertz sensing, which is a powerful tool for broadband spectroscopy and industrial non-destructive testing. In our method, a frequency-swept optical beat signal generates the terahertz field, which is then coherently detected by photomixing, employing a time-delayed copy of the same beat signal. Consequently, the receiver current is inherently phase-modulated without additional modulator. Owing to this technique, our broadband terahertz spectrometer performs (200 Hz measurement rate, or 4 THz bandwidth and 117 dB peak dynamic range with averaging) comparably to state-of-the-art terahertz-TDS systems, yet with significantly reduced complexity. Thickness measurements of multilayer dielectric samples with layer-thicknesses down to 23 µm show its potential for real-world applications. Within only 0.2 s measurement time, an uncertainty of less than 2 % is achieved, the highest accuracy reported with continuous-wave terahertz spectroscopy. Hence, the optoelectronic FMCW approach paves the way towards broadband and compact terahertz spectrometers that combine fiber optics and photonic integration technologies.

Integrated Microwave Photonic Filter on a Hybrid Silicon Platform

2010 ◽  
Vol 58 (11) ◽  
pp. 3213-3219 ◽  
Author(s):  
Hui-Wen Chen ◽  
Alexander W. Fang ◽  
Jonathan D. Peters ◽  
Zhi Wang ◽  
Jock Bovington ◽  
...  
Keyword(s):  
Microwave Photonic ◽  
Hybrid Silicon

Compact, High-Speed Hybrid Silicon Microring Lasers for Computer Interconnects

2010 ◽  
Author(s):  
John E. Bowers ◽  
Di Liang ◽  
Marco Fiorentino ◽  
Raymond G. Beausoleil
Keyword(s):  
High Speed ◽  
Hybrid Silicon

scholarly journals Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration

2009 ◽  
Vol 15 (3) ◽  
pp. 482-487 ◽  
Author(s):  
D.C. Byrne ◽  
J.P. Engelstaedter ◽  
Wei-Hua Guo ◽  
Qiao Yin Lu ◽  
B. Corbett ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Photonic Integration

HYBRID SILICON-MOLECULAR ELECTRONICS

2008 ◽  
Vol 22 (12) ◽  
pp. 1183-1202 ◽  
Author(s):  
QILIANG LI
Keyword(s):  
Molecular Electronics ◽  
New Technologies ◽  
Electronic System ◽  
Cmos Technology ◽  
Smooth Transition ◽  
Molecular Memory ◽  
Molecular Systems ◽  
Redox Active ◽  
Hybrid Silicon ◽  
Intensive Investigation

As CMOS technology extends beyond the current technology node, many challenges to conventional MOSFET were raised. Non-classical CMOS to extend and fundamentally new technologies to replace current CMOS technology are under intensive investigation to meet these challenges. The approach of hybrid silicon/molecular electronics is to provide a smooth transition technology by integrating molecular intrinsic scalability and diverse properties with the vast infrastructure of traditional MOS technology. Here we discuss: (1) the integration of redox-active molecules into Si -based structures, (2) characterization and modeling of the properties of these Si /molecular systems, (3) single and multiple states of Si /molecular memory, and (4) applications based on hybrid Si /molecular electronic system.

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