scholarly journals Влияние температуры спекания на термоэлектрические свойства соединения Bi-=SUB=-1.9-=/SUB=-Gd-=SUB=-0.1-=/SUB=-Te-=SUB=-3-=/SUB=-

Author(s):  
М.Н. Япрынцев ◽  
А.Е. Васильев ◽  
О.Н. Иванов

AbstractThe regularities of the influence of the sintering temperature (750, 780, 810, and 840 K) on the elemental composition, crystal-lattice parameters, electrical resistivity, Seebeck coefficient, total thermal conductivity, and thermoelectric figure of merit of the Bi_1.9Gd_0.1Te_3 compound are investigated. It is established that the elemental composition of the samples during high-temperature sintering varies due to intense tellurium evaporation, which can lead to the formation of various point defects (vacancies and antisite defects) affecting the majority carrier (electron) concentration and mobility. The sintering temperature greatly affects the electrical resistivity of the samples, while the influence on the Seebeck coefficient and total thermal conductivity is much weaker. The largest thermoelectric figure of merit ( ZT ≈ 0.55) is observed for the sample sintered at 750 K.

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


2020 ◽  
Vol 62 (4) ◽  
pp. 537
Author(s):  
А.В. Сотников ◽  
В.В. Баковец ◽  
Michihiro Ohta ◽  
А.Ш. Агажанов ◽  
С.В. Станкус

The temperature dependences of Seebeck coefficient, electrical conductivity (Т=300–873K), thermal conductivity and figure of merit (Т=300–770K) of polycrystalline samples of solid solutions based on gadolinium and dysprosium sulfides with γ-GdxDy1-xS1.49 (x=0.1, 0.2, 0.3, 0.4) composition were studied. It was established that samples morphological features, namely, the specific surface area of crystallites causing a change in the number of deformation centers determines the thermal conductivity of -GdxDy1-xS1.49, and it was found that there is an anomalous decrease in thermal conductivity for composition with х = 0.2. For this composition the lowest values of Seebeck coefficient -371 mkV/K at 873K, electrical resistivity 880 mkΩ∙m at 873K and thermal conductivity 0.68 ± 0.03 W/m·K at 770K were obtained, in this case the thermoelectric figure of merit reaches ZT = 0.23.


Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1529 ◽  
Author(s):  
Amin Nozariasbmarz ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee

Thermoelectric materials could play a crucial role in the future of wearable electronic devices. They can continuously generate electricity from body heat. For efficient operation in wearable systems, in addition to a high thermoelectric figure of merit, zT, the thermoelectric material must have low thermal conductivity and a high Seebeck coefficient. In this study, we successfully synthesized high-performance nanocomposites of n-type Bi2Te2.7Se0.3, optimized especially for body heat harvesting and power generation applications. Different techniques such as dopant optimization, glass inclusion, microwave radiation in a single mode microwave cavity, and sintering conditions were used to optimize the temperature-dependent thermoelectric properties of Bi2Te2.7Se0.3. The effects of these techniques were studied and compared with each other. A room temperature thermal conductivity as low as 0.65 W/mK and high Seebeck coefficient of −297 μV/K were obtained for a wearable application, while maintaining a high thermoelectric figure of merit, zT, of 0.87 and an average zT of 0.82 over the entire temperature range of 25 °C to 225 °C, which makes the material appropriate for a variety of power generation applications.


2012 ◽  
Vol 1490 ◽  
pp. 69-73
Author(s):  
N. Yoshida ◽  
T. Naito ◽  
H. Fujishiro

ABSTRACTThermoelectric properties of the Li-doped Cu0.95-xM0.05LixO (M=divalent metal ion; Mn, Ni, Zn) were investigated at the temperature up to 1273 K. In the doped divalent metal ions, Zn2+ ion was the most effective to reduce the thermal conductivity, and the Ni2+ substitution was preferable to decrease the electrical resistivity. For the Cu0.95-xNi0.05LixO sample at x=0.03, the maxima of the dimensionless thermoelectric figure of merit ZT and the power factor P at 1246 K were 4.2×10-2 and 1.6 ×10-4 W/K2m, respectively. The enhancement of the thermoelectric properties of the Li-doped Cu0.95-xM0.05LixO system was discussed.


2013 ◽  
Vol 665 ◽  
pp. 179-181 ◽  
Author(s):  
Anup V. Sanchela ◽  
Varun Kushwaha ◽  
Ajay. D. Thakur ◽  
C.V. Tomy

FeSb2 was recently found to be a narrow-gap semiconductor with strong electronelectron correlation and a large thermopower at low temperatures. We report measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity between 5 K to 300 K on polycrystalline samples of FeSb2 and FeSb1.9. We found that the deficiency of Sb in the parent compound leads to a giant anomalous peak in thermopower (S) at low temperatures, reaching ~ 426 μV/K at 20 K, resulting in a high thermoelectric power factor at low temperatures, achieving 10 μW/K2m at 27 K.. Consequently, a significantly enhanced thermoelectric figure of merit ZT ~ 0.0015 is achieved near room temperature. At low temperatures there is no improvement in ZT values due to the high thermal conductivity (phonon dominant region). Keywords: Seebeck coefficient, thermal conductivity, resistivity, thermoelectric figure of merit. PACS: 72.20.Pa, 71.27.+a, 71.28.+d


2015 ◽  
Vol 16 (1) ◽  
pp. 62-67
Author(s):  
O. M. Matkivsky

An X-ray diffraction structural study and measurement of Seebeck coefficient (S), the electrical conductivity (σ) and thermal conductivity (χ) for Lead Telluride with nanoinclusions of ZnO. The calculated value of the specific thermoelectric power (S2σ) and thermoelectric figure of merit (ZT). It was established that the addition of ZnO powder Nanodispersed diameter grains (40-60) nm PbTe reduces the thermal conductivity of the material, and at 0.5 wt.% ZnO to an increase of lead telluride thermoelectric figure of merit to ZT≈1,3.


2006 ◽  
Vol 510-511 ◽  
pp. 1070-1073 ◽  
Author(s):  
Il Ho Kim ◽  
J.B. Park ◽  
Tae Whan Hong ◽  
Soon Chul Ur ◽  
Young Geun Lee ◽  
...  

Zn4Sb3 was successfully produced by a hot pressing technique, and its thermoelectric properties were investigated in the temperature range from 4K to 300K. The Seebeck coefficient, electrical conductivity, thermal conductivity, and thermoelectric figure of merit showed a discontinuity in variation at 242K, indicating the α-Zn4Sb3 to β-Zn4Sb3 phase transformation. Lattice thermal conductivity was found to be dominant in the total thermal conductivity of Zn4Sb3. Therefore, it is expected that thermoelectric properties can be improved by reducing the lattice thermal conductivity inducing phonon scattering centers.


2014 ◽  
Vol 787 ◽  
pp. 210-214 ◽  
Author(s):  
Yi Li ◽  
Jian Liu ◽  
Chun Lei Wang ◽  
Wen Bin Su ◽  
Yuan Hu Zhu ◽  
...  

The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced in various conditions, were investigated in the temperature range from 323K to 1073K. Both the electrical resistivity and the absolute Seebeck coefficient decreased with the deepening degree of oxygen-reduction. However, the decrease of the electrical resistivity had a major influence on the thermoelectric power factor. Therefore, the more heavily reduced sample can gain the higher value of thermoelectric power factor. It has been observed that the thermal conductivity increased with the deepening degree of oxygen-reduction, which indicates that the scattering of the oxygen vacancies produced by reduction does not play a dominant role in the thermal conduction. In spite of the increase of the thermal conductivity, the oxygen-reduction still promoted the thermoelectric figure of merit via the increase of the thermoelectric power factor. And the most heavily reduced Sr0.61Ba0.39Nb2O6 ceramic has the highest thermoelectric figure of merit (~0.18 at 1073 K) among all the samples.


2000 ◽  
Vol 626 ◽  
Author(s):  
Takaaki Koga ◽  
Stephen B. Cronin ◽  
Mildred S. Dresselhaus

ABSTRACTThe concept of carrier pocket engineering applied to Si/Ge superlattices is tested experimentally. A set of strain-symmetrized Si(20Å)/Ge(20Å) superlattice samples were grown by MBE and the Seebeck coefficient S, electrical conductivity σ, and Hall coefficient were measured in the temperature range between 4K and 400K for these samples. The experimental results are in good agreement with the carrier pocket engineering model for temperatures below 300K. The thermoelectric figure of merit for the entire superlattice, Z3DT, is estimated from the measured S and σ, and using an estimated value for the thermal conductivity of the superlattice. Based on the measurements of these homogeneously doped samples and on model calculations, including the detailed scattering mechanisms of the samples, projections are made for δ-doped and modulation-doped samples [(001) oriented Si(20Å)/Ge(20Å) superlattices] to yield Z3DT ≈ 0.49 at 300K.


2011 ◽  
Vol 1329 ◽  
Author(s):  
Sumithra. Santhanam ◽  
Nathan J. Takas ◽  
Westly M. Nolting ◽  
Pierre F.P. Poudeu ◽  
Kevin L. Stokes

ABSTRACTThe carrier concentration and electronic transport properties in Bi2-xSbxTe3 alloy can be tuned by varying the Bi to Sb ratio, for high thermoelectric figure of merit. The concentration of intrinsic antisite defects in these alloys is also known to change with Bi to Sb ratio. Here we report the thermoelectric figure of merit of Sn doped Bi0.5Sb1.5Te3 alloy. Different atomic percentages of Sn was substituted at Bi/Sb site in Bi0.5Sb1.5Te3 alloy, synthesized by planetary ball milling. The electrical conductivity decreases with increasing Sn doping but for higher Sn content the electrical conductivity increases compared to undoped alloy. The Seebeck coefficient changes in accordance to electrical conductivity, resulting in small decrease in power factor for highest Sn doping. The lattice thermal conductivity shows a systematic decrease, with increasing Sn concentration resulting in a significant thermal conductivity reduction. Hence an increase in thermoelectric figure of merit could be achieved for the highest Sn (3at%) doping in Bi0.5Sb1.5Te3 alloy as compared to undoped alloy.


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