scholarly journals Модель контакта двумерного металла и графеноподобного соединения с учетом их взаимодействия

2021 ◽  
Vol 55 (7) ◽  
pp. 578
Author(s):  
С.Ю. Давыдов ◽  
О.В. Посредник
Keyword(s):  
Charge Transfer ◽  
Schottky Barrier ◽  
Weak Coupling ◽  
Schottky Barrier Height ◽  
Green Functions ◽  
Two Dimensional ◽  
Interlayer Interaction ◽  
Occupation Numbers ◽  
Diagonal Approach ◽  
Analytical Expressions

With the account of interlayer interaction, system of graphene-like compound (GLC) and two-dimensional d-metal (2DM) is considered. Within the scope of the diagonal approach corresponding Green functions are obtained. Regime of GLC ̶ 2DM weak coupling is studied thoroughly and analytical expressions for the corrections to the occupation numbers, charge transfer and Schottky barrier height are fulfilled. It is demonstrated that the corrections obtained are of significant importance for the metals of the beginning and the end of the d-rows.

scholarly journals Роль кулоновского взаимодействия в дефектной модели барьера Шоттки

2021 ◽  
Vol 47 (5) ◽  
pp. 28
Author(s):  
С.Ю. Давыдов ◽  
О.В. Посредник
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Short Range ◽  
Schottky Barrier Height ◽  
Coulomb Repulsion ◽  
Semiconductor Defects ◽  
Metal Atoms ◽  
Occupation Numbers ◽  
Analytical Expressions ◽  
Barrier Model

Schottky barrier model is proposed which is characterized by the interface di-mers consist of semiconductor defects and nearest neighboring metal atoms. Short-range Coulomb repulsion between defects and metal atoms electrons is taken into account. Analytical expressions for the occupation for the atoms and defects occupation numbers and Schottky barrier height are obtained.

scholarly journals Барьер Шоттки на контакте магнитного 3d-металла с полупроводником

2021 ◽  
Vol 47 (11) ◽  
pp. 37
Author(s):  
С.Ю. Давыдов ◽  
О.В. Посредник
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Model ◽  
Band Model ◽  
Defect State ◽  
Local Defect ◽  
Analytical Expressions

With the aim of the Friedel transition metal d-band model and semiconductor local defect state model the analytical expressions for metal – semiconductor charge transfer and Schottky barrier height are obtained. It is shown that the account of metal magnetization leads to the increase of the charge transfer and corresponding contribution to the Schottky barrier height. Numerical estimates are made for the contacts of Co and Ni with 6H- and 4H-SiC polytypes.

scholarly journals Кластерная модель латеральной графеноподобной гетероструктуры: оценки перехода заряда

2018 ◽  
Vol 60 (9) ◽  
pp. 1815
Author(s):  
С.Ю. Давыдов
Keyword(s):  
Charge Transfer ◽  
Boron Nitride ◽  
Cluster Model ◽  
Binary Compound ◽  
Metal Substrate ◽  
Two Dimensional ◽  
Occupation Numbers ◽  
Densities Of States ◽  
Local Densities ◽  
Analytical Expressions

AbstractA simple cluster model is proposed to describe zigzag and armchair contacts of graphene to a hexagonal two-dimensional binary compound adsorbed on a metal substrate. A graphene–boron nitride heterostructure (HS) is studied in detail. Analytical expressions are obtained for the local densities of states and the occupation numbers of contact atoms. The charge transfer for quasi-free HSs is analyzed. The energy of binding of a HS to a metal substrate is estimated.

scholarly journals Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

2021 ◽  
Vol 9 ◽  
Author(s):  
Wenjun Xiao ◽  
Tianyun Liu ◽  
Yuefei Zhang ◽  
Zhen Zhong ◽  
Xinwei Zhang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
First Principles ◽  
Schottky Barrier Height ◽  
Optoelectronic Devices ◽  
Strain Condition ◽  
Two Dimensional ◽  
Photoelectric Device ◽  
Horizontal Strain ◽  
P Type

With a direct bandgap, two-dimensional (2D) ZnSe is a promising semiconductor material in photoelectric device fields. In this work, based on first-principles methods, we theoretically studied the modulation of the Schottky barrier height (SBH) by applying horizontal and vertical strains on graphene/ZnSe heterojunction. The results show that the inherent electronic properties of graphene and ZnSe monolayers are both well-conserved because of the weak van der Waals (vdW) forces between two sublayers. Under horizontal strain condition, the n(p)-type SBH decreases from 0.56 (1.62) eV to 0.21 (0.78) eV. By changing the interlayer distance in the range of 2.8 Å to 4.4 Å, the n(p)-type SBH decreases (increases) from 0.88 (0.98) eV to 0.21 (1.76) eV. These findings prove the SBH of the heterojunction to be tuned effectively, which is of great significance to optoelectronic devices, especially in graphene/ZnSe-based nano-electronic and optoelectronic devices.

scholarly journals Цепочечная модель зигзагообразного контакта латеральных графеноподобных гетероструктур

2018 ◽  
Vol 44 (21) ◽  
pp. 55
Author(s):  
С.Ю. Давыдов
Keyword(s):  
Boron Nitride ◽  
Density Of States ◽  
Structural Model ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Occupation Numbers ◽  
Densities Of States ◽  
Spectrum Density ◽  
Analytical Expressions ◽  
Good Agreement

AbstractA simple structural model is proposed for the zigzag interface formed by contacting two-dimensional graphene-like compounds AB and CD (both free and formed on a metal). For the graphene–hexagonal boron nitride system, analytical expressions for the electron spectrum, density of states, and atom occupation numbers at the interface are obtained. The results of calculating the densities of states and occupation numbers within two alternative approximations are in good agreement.

scholarly journals О контакте двумерного переходного металла с графеноподобным соединением

2021 ◽  
Vol 63 (6) ◽  
pp. 817
Author(s):  
С.Ю. Давыдов
Keyword(s):  
Charge Transfer ◽  
Simple Model ◽  
Barrier Height ◽  
Two Dimensional ◽  
Analytical Expressions ◽  
Metal Character

Within the scope of the simple model analytical expressions for the charge transfer and the Shottky barrier height on the contact of two-dimensional d-metal with graphene-like ANB8-N compound are obtained. It is shown that 2D metal character can be taken into account by the d-band contraction. Using Gr – 2DM and hBN – 2DM systems as an example, it is demonstrated that the proposed approach gives the appropriate results.

CALCULATION OF THE DEPENDENCE OF THE DISTANCE TO THE LOCATED OBJECT FROM THE CORNER POSITION OF THE VEHICLE LINE

2018 ◽  
pp. 14-18
Author(s):  
V. V. Artyushenko ◽  
A. V. Nikulin
Keyword(s):  
Real Time ◽  
Statistical Physics ◽  
Angular Position ◽  
Three Dimensional ◽  
Line Of Sight ◽  
Two Dimensional ◽  
Radar Station ◽  
Flight Mode ◽  
Vector Algebra ◽  
Analytical Expressions

To simulate echoes from the earth’s surface in the low flight mode, it is necessary to reproduce reliably the delayed reflected sounding signal of the radar in real time. For this, it is necessary to be able to calculate accurately and quickly the dependence of the distance to the object being measured from the angular position of the line of sight of the radar station. Obviously, the simplest expressions for calculating the range can be obtained for a segment or a plane. In the text of the article, analytical expressions for the calculation of range for two-dimensional and three-dimensional cases are obtained. Methods of statistical physics, vector algebra, and the theory of the radar of extended objects were used. Since the calculation of the dependence of the range of the object to the target from the angular position of the line of sight is carried out on the analytical expressions found in the paper, the result obtained is accurate, and due to the relative simplicity of the expressions obtained, the calculation does not require much time.

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