scholarly journals Роль кулоновского взаимодействия в дефектной модели барьера Шоттки

2021 ◽  
Vol 47 (5) ◽  
pp. 28
Author(s):  
С.Ю. Давыдов ◽  
О.В. Посредник
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Short Range ◽  
Schottky Barrier Height ◽  
Coulomb Repulsion ◽  
Semiconductor Defects ◽  
Metal Atoms ◽  
Occupation Numbers ◽  
Analytical Expressions ◽  
Barrier Model

Schottky barrier model is proposed which is characterized by the interface di-mers consist of semiconductor defects and nearest neighboring metal atoms. Short-range Coulomb repulsion between defects and metal atoms electrons is taken into account. Analytical expressions for the occupation for the atoms and defects occupation numbers and Schottky barrier height are obtained.

scholarly journals Модель контакта двумерного металла и графеноподобного соединения с учетом их взаимодействия

2021 ◽  
Vol 55 (7) ◽  
pp. 578
Author(s):  
С.Ю. Давыдов ◽  
О.В. Посредник
Keyword(s):  
Charge Transfer ◽  
Schottky Barrier ◽  
Weak Coupling ◽  
Schottky Barrier Height ◽  
Green Functions ◽  
Two Dimensional ◽  
Interlayer Interaction ◽  
Occupation Numbers ◽  
Diagonal Approach ◽  
Analytical Expressions

With the account of interlayer interaction, system of graphene-like compound (GLC) and two-dimensional d-metal (2DM) is considered. Within the scope of the diagonal approach corresponding Green functions are obtained. Regime of GLC ̶ 2DM weak coupling is studied thoroughly and analytical expressions for the corrections to the occupation numbers, charge transfer and Schottky barrier height are fulfilled. It is demonstrated that the corrections obtained are of significant importance for the metals of the beginning and the end of the d-rows.

scholarly journals Барьер Шоттки на контакте магнитного 3d-металла с полупроводником

2021 ◽  
Vol 47 (11) ◽  
pp. 37
Author(s):  
С.Ю. Давыдов ◽  
О.В. Посредник
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Model ◽  
Band Model ◽  
Defect State ◽  
Local Defect ◽  
Analytical Expressions

With the aim of the Friedel transition metal d-band model and semiconductor local defect state model the analytical expressions for metal – semiconductor charge transfer and Schottky barrier height are obtained. It is shown that the account of metal magnetization leads to the increase of the charge transfer and corresponding contribution to the Schottky barrier height. Numerical estimates are made for the contacts of Co and Ni with 6H- and 4H-SiC polytypes.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

Sign in / Sign up

Export Citation Format

Share Document