scholarly journals Дифференциальная туннельная проводимость в многокомпонентных твердых растворах Bi-=SUB=-2-x-=/SUB=-Sb-=SUB=-x-=/SUB=-Te-=SUB=-3-y-z-=/SUB=-Se-=SUB=-y-=/SUB=-S-=SUB=-z-=/SUB=-

Author(s):  
Л.Н. Лукьянова ◽  
И.В. Макаренко ◽  
О.А. Усов

Differential tunnel conductance of the interlayer van der Waals surface (0001) was investigated in n-Bi2-xSbxTe3-y-zSeySz multicomponent solid solutions at x = 0.2, y = z = 0.09, optimized for near room temperatures with a high power factor, and at x = 0.4, y = 0, z = 0.06 with optimal thermoelectric properties for low temperatures and a high Seebek coefficient. It is shown that the intensity of the fluctuations of the Dirac point energy, a shift the top of the valence band and presence of surface levels in the energy gap formed by impurity defects is determined with composition and thermoelectric properties of solid solutions. The contribution of the surface states of Dirac fermions increases in n-Bi1.8Sb0.2Te2.82Se0.09S0.09 solid solution with a high power factor due to significant decrease of the surface concentration near the charge neutrality point and the growth of fermion mobility.

2014 ◽  
Vol 115 (3) ◽  
pp. 033709 ◽  
Author(s):  
M. Zervos ◽  
Z. Viskadourakis ◽  
G. Athanasopoulos ◽  
R. Flores ◽  
O. Conde ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14415-14421
Author(s):  
Changhoon Lee ◽  
Sujee Kim ◽  
Won-Joon Son ◽  
Ji-Hoon Shim ◽  
Myung-Hwan Whangbo

The ternary selenides A2Sb4Se8 (A = K, Rb, Cs) are predicted to be a high-performance n-type thermoelectric material, and the conformationally-flexible Sb–Se(2)–Se(2)–Sb bridges are crucial in determining the thermoelectric properties of A2Sb4Se8.


2013 ◽  
Vol 1558 ◽  
Author(s):  
Baozhu Wang ◽  
Bahadir Kucukgok ◽  
Qinyue He ◽  
Andrew G. Melton ◽  
Jacob Leach ◽  
...  

ABSTRACTIn this study, thermoelectric properties of bulk and epitaxy GaN with various doping concentration are investigated. Seebeck coefficients decreased with the increase of carrier concentration for both bulk and epitaxial GaN samples, and the Seebeck coefficients of epitaxial GaN samples are found to be larger than that of bulk GaN samples in the similar carrier density due to the higher dislocation scattering. For epitaxial samples, a high power factor of 4.72 × 10-4 W/m-K2 is observed. The power factors of the bulk GaN samples are in the range of from 0.315× 10-4W/m-K2 to 0.354× 10-4W/m-K2 due to the low Seebeck coefficients.


Author(s):  
Makoto Tachibana ◽  
Ahmad Rifqi Muchtar ◽  
Takao Mori

Abstract We report the thermal conductivity (κ) of perovskite Sr1−x(La0.5Na0.5)xTiO3 (0 ≤ x ≤ 1) and the thermoelectric properties of Nb-doped samples for x = 0.1 and 0.2. The κ of the solid solution shows a distinct minimum near the cubic-tetragonal phase boundary at x = 0.2, where the value becomes close to the minimum theoretical κ. Nb doping to x = 0.2 retains the high power factor found in Nb-doped SrTiO3, but also raises the κ to result in a thermoelectric figure of merit of 0.24 at 773 K.


Author(s):  
Л.Н. Лукьянова ◽  
И.В. Макаренко ◽  
О.А. Усов ◽  
П.А. Дементьев

Topological surface states of Dirac fermions in n-Bi2Te3−ySey thermoelectrics L.N. Lukyanova, I.V. Makarenko, O.A. Usov, P.A. Dementev Ioffe Institute, 194021 St. Petersburg, Russia Abstract In n-Bi2Te3 and n-Bi2Te3−ySey thermoelectrics, the surface states of Dirac fermions of the interlayer van der Waals plane (0001) were studied by scanning tunneling microscopy (STM) and spectroscopy. The surface morphology and modulated line profiles of the images in tunneling microscopy is determined by local distortions of the surface electron states density and depend on the composition. The Dirac point ED of the studied compositions is localized in the energy gap, and it shifts to the top of the valence band with increase of Se content in the solid solutions. The dependence between Dirac surface state parameters (the Dirac point position, the Fermi velocity, the fermion surface concentration) and thermoelectric properties (Seebeck coefficient and the power factor) is established for the thermoelectrics studied.


2013 ◽  
Vol 210 (12) ◽  
pp. 2628-2637 ◽  
Author(s):  
E. M. Levin ◽  
R. Hanus ◽  
M. Hanson ◽  
W. E. Straszheim ◽  
K. Schmidt-Rohr

Science ◽  
2021 ◽  
pp. eabi8668
Author(s):  
Bingchao Qin ◽  
Dongyang Wang ◽  
Xixi Liu ◽  
Yongxin Qin ◽  
Jin-Feng Dong ◽  
...  

Thermoelectric materials transfer heat and electrical energy, being useful for power generation or cooling applications. Many of these materials have narrow bandgaps, especially for cooling applications where this property has been seen as particularly important for enhancing the thermoelectric properties. We developed SnSe crystals with a wide bandgap Eg ~ 33 kBT with attractive thermoelectric properties through Pb alloying. The momentum and energy multiband alignment promoted by Pb alloying resulted in an ultra-high power factor ~75 μWcm–1K–2 at 300 K, and a ZTave ~ 1.90. We show that a 31-pair thermoelectric device can produce a power generation efficiency ~4.4% and a cooling ΔTmax ~ 45.7 K. These results demonstrate that wide bandgap compounds can be used for thermoelectric cooling applications.


2018 ◽  
Vol 6 (46) ◽  
pp. 23730-23735 ◽  
Author(s):  
Shaojun Liang ◽  
Jingtao Xu ◽  
Jacques Guillaume Noudem ◽  
Hongxiang Wang ◽  
Xiaojian Tan ◽  
...  

The hot deformation process enhances the textured degree of ploycrystalline SnSe, leading to better electrical conductivity and a high power factor of 10.2 μW cm−1 K−2 at 823 K.


2010 ◽  
Vol 4 (2) ◽  
pp. 1-6
Author(s):  
S. Sankar ◽  
◽  
G. Gokula Krishnan ◽  

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