scholarly journals Current transport and thermoelectric properties of very high power factor Fe3O4/SiO2/p-type Si(001) devices

2014 ◽  
Vol 115 (3) ◽  
pp. 033709 ◽  
Author(s):  
M. Zervos ◽  
Z. Viskadourakis ◽  
G. Athanasopoulos ◽  
R. Flores ◽  
O. Conde ◽  
...  
2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .


2020 ◽  
Vol 30 (28) ◽  
pp. 2001760 ◽  
Author(s):  
Travis G. Novak ◽  
Jin Kim ◽  
Jungmo Kim ◽  
Anand P. Tiwari ◽  
Hosun Shin ◽  
...  

2016 ◽  
Vol 113 (48) ◽  
pp. 13576-13581 ◽  
Author(s):  
Ran He ◽  
Daniel Kraemer ◽  
Jun Mao ◽  
Lingping Zeng ◽  
Qing Jie ◽  
...  

Improvements in thermoelectric material performance over the past two decades have largely been based on decreasing the phonon thermal conductivity. Enhancing the power factor has been less successful in comparison. In this work, a peak power factor of ∼106 μW⋅cm−1⋅K−2is achieved by increasing the hot pressing temperature up to 1,373 K in the p-type half-Heusler Nb0.95Ti0.05FeSb. The high power factor subsequently yields a record output power density of ∼22 W⋅cm−2based on a single-leg device operating at between 293 K and 868 K. Such a high-output power density can be beneficial for large-scale power generation applications.


2019 ◽  
Vol 21 (3) ◽  
pp. 1315-1323 ◽  
Author(s):  
Zhen Li ◽  
Siyu Han ◽  
Yuanchun Pan ◽  
Naihua Miao ◽  
Jian Zhou ◽  
...  

The high power factor of a p-type BST single QL is ensured by the robust multi-valley character of valence bands.


2019 ◽  
Vol 10 ◽  
pp. 634-643 ◽  
Author(s):  
Srashti Gupta ◽  
Dinesh Chandra Agarwal ◽  
Bathula Sivaiah ◽  
Sankarakumar Amrithpandian ◽  
Kandasami Asokan ◽  
...  

The present study aims to see the enhancement in thermoelectric properties of bismuth telluride (Bi2Te3) annealed at different temperatures (573 and 773 K) through silver (Ag) nano-inclusions (0, 2, 5, 10, 15 and 20 wt %). Transmission electron microscopy (TEM) images of Ag incorporated in Bi2Te3 annealed at 573 K shows tubular, pentagonal, trigonal, circular and hexagonal nanoparticles with sizes of 6–25 nm (for 5 wt % Ag ) and 7–30 nm (for 20 wt % Ag). Ag incorporated in Bi2Te3 annealed at 773 K shows mainly hexagonally shaped structures with particle sizes of 2–20 nm and 40–80 nm (for 5 wt % Ag) and 10–60 nm (for 20 wt % Ag). Interestingly, the samples annealed at 573 K show the highest Seebeck coefficient (S, also called thermopower) at room temperature (p-type behavior) for 5% Ag which is increased ca. five-fold in comparison to Ag-free Bi2Te3, whereas for samples with the same content (5% Ag) annealed at 773 K the increment in thermopower is only about three-fold with a 6.9-fold enhancement of the power factor (S 2σ). The effect of size and shape of the nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit.


RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14415-14421
Author(s):  
Changhoon Lee ◽  
Sujee Kim ◽  
Won-Joon Son ◽  
Ji-Hoon Shim ◽  
Myung-Hwan Whangbo

The ternary selenides A2Sb4Se8 (A = K, Rb, Cs) are predicted to be a high-performance n-type thermoelectric material, and the conformationally-flexible Sb–Se(2)–Se(2)–Sb bridges are crucial in determining the thermoelectric properties of A2Sb4Se8.


2013 ◽  
Vol 1558 ◽  
Author(s):  
Baozhu Wang ◽  
Bahadir Kucukgok ◽  
Qinyue He ◽  
Andrew G. Melton ◽  
Jacob Leach ◽  
...  

ABSTRACTIn this study, thermoelectric properties of bulk and epitaxy GaN with various doping concentration are investigated. Seebeck coefficients decreased with the increase of carrier concentration for both bulk and epitaxial GaN samples, and the Seebeck coefficients of epitaxial GaN samples are found to be larger than that of bulk GaN samples in the similar carrier density due to the higher dislocation scattering. For epitaxial samples, a high power factor of 4.72 × 10-4 W/m-K2 is observed. The power factors of the bulk GaN samples are in the range of from 0.315× 10-4W/m-K2 to 0.354× 10-4W/m-K2 due to the low Seebeck coefficients.


2018 ◽  
Vol 6 (41) ◽  
pp. 20128-20137 ◽  
Author(s):  
Xianfu Meng ◽  
Yuan Liu ◽  
Bo Cui ◽  
Dandan Qin ◽  
Jian Cao ◽  
...  

Filled skutterudites, possessing a high power factor and good mechanical properties, have attracted intensive attention for the intermediate-temperature power generation.


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