scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

scholarly journals A Gated Four Probe Technique for Field Effect Measurements on Disordered Organic Semiconductors

2008 ◽  
Vol 63 (9) ◽  
pp. 591-595 ◽  
Author(s):  
Elizabeth von Hauff ◽  
Nicolas Spethmann ◽  
Jürgen Parisi
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Organic Field Effect Transistors ◽  
Transport Parameters ◽  
Electric Field Dependence ◽  
High Impedance ◽  
Current Voltage

A gated four probe measurement technique to isolate contact resistances in field effect measurementson disordered organic semiconductors was investigated. Organic field effect transistors (OFETs) were prepared with two additional electrodes in the contact geometry protruding into the source-drain channel to monitor the variation in potential across the channel. Two high impedance electrometers were used to determine the potential at the contacts. This technique allows to directly determine the magnitude of the parasitic contact resistances between metal contact and organic semiconductor from the drop in potential at the contact regions. The effects of contact resistances, which can falsify measurements on bulk transport parameters such as the field effect mobility, can be then eliminated during material characterization. Additionally, the temperature and electric field dependence of the contact resistances offers valuable information about the charge injection and extraction processes between metal and organic semiconductor. The effects of the four probe geometry, specifically the effect of the channel electrodes on the current-voltage characteristics, of hole transport in a polythiophene (P3HT) OFET with Au contacts were investigated and found not to influence device performance, except at currents « 1 nA. The IV characteristics were shown to follow the expected FET behaviour. From the variation in potential along the channel it was found that contact resistances at the source contact (charge injecting contact) are minimal while contact resistances at thedrain contact (charge extracting contact) are significant, resulting in a much lower effective sourcedrain voltage than that applied to the device.

scholarly journals Особенности вольт-амперных характеристик полевых транзисторов с активными слоями на основе композитных пленок полупроводниковых полимеров с наночастицами неорганических перовскитов

2019 ◽  
Vol 45 (23) ◽  
pp. 47
Author(s):  
Е.В. Остроумова ◽  
А.Н. Алешин
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Gain ◽  
Light Emitting ◽  
Active Layers ◽  
Composite Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Minority Carriers ◽  
Improved Characteristics

The current – ​​voltage characteristics of composite field effect transistors with active layers based on inorganic perovskites - nanocrystals of cesium halides CsPbBr3 embedded in a PFO semiconductor polymer matrix (PFO: CsPbBr3) are analyzed. An increase of the current gain β in the current – ​​voltage characteristics as a negative gate voltage increase was discovered and explained. It is shown that the appearance of additional injection of minority carriers from the electrodes into the induced channel,makes it possible to create the composite light-emitting field-effect transistors with improved characteristics.

Unification of the Charge Transport in Field-Effect Transistors and Light-Emitting Diodes Based on Organic Semiconductors

2011 ◽  
Vol 687 ◽  
pp. 222-227 ◽  
Author(s):  
L. G. Wang ◽  
Huai Wu Zhang ◽  
Xiao Li Tang ◽  
Yuan Qiang Song
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Light Emitting ◽  
Current Voltage ◽  
Physically Based ◽  
Current Voltage Characteristics ◽  
Gaussian Disorder Model

A physically based mathematical model for the charge transport in field-effect transistors and lighting-emitting diodes based on disordered organic semiconductors has been presented. It is developed basing on the Gaussian disorder model and extends the pioneering work of Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)] to higher carrier densities and large electric field. The experimental current voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this model. Furthermore, we calculate and analyze some electrical properties for the relevant polymers in detail using this model.

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