scholarly journals Электронная структура и оптические спектры соединений GdFeAl и GdFeSi

2021 ◽  
Vol 63 (6) ◽  
pp. 700
Author(s):  
Ю.В. Князев ◽  
А.В. Лукоянов ◽  
Ю.И. Кузьмин ◽  
А.Г. Кучин ◽  
С.П. Платонов

Results of investigations of electronic structure and optical properties of GdFeAl and GdFeSi compounds are presented. Spin-plarized density of states and interband optical conductivity spectra were calculated in frame of DFT+U technique with a correction for strong correlation effects in 4f shell of Gd. Optical properties were measured by ellipsometric technique in wavelength interval of 0.22 – 16 μm. Nature of quantum light absorption is discussed on the base of comparative analysis of experimental and calculated spectra. It is shown that main features of frequency dependencies of the optical conductivity are interpret qualitatively by the calculated density of electronic states.

2020 ◽  
Vol 62 (1) ◽  
pp. 85
Author(s):  
Ю.В. Князев ◽  
А.В. Лукоянов ◽  
Ю.И. Кузьмин

Electronic structure and optical properties of the FeAl2 intermetallic compound are investigated. Spin-polarized calculations of the electronic structure were carried out, magnetic moments of the atoms were determined. Optical properties of the compound were measured by ellipsometric technique in spectral interval 0.22 – 15 μm. It is shown that the experimental optical conductivity is satisfactory interpreted on the base of the calculated density of electronic states.


2020 ◽  
Vol 62 (7) ◽  
pp. 1004
Author(s):  
Ю.В. Князев ◽  
Ю.И. Кузьмин

Ellipsometric investigation of the optical properties of YFe2 and TbFe2 intermetalic compounds have been carried out in wavelength range of 0.22 –15 μm. A number of electronic and spectral characteristic was determined. Nature of interband light absorption in these materials is discussed on base of comparative analyses of experimental and theoretical optical conductivity spectra. Experimental optical conductivities of the compounds are shown to conform qualitatively to spectra calculated from densities of electronic states in the region of quantum electron transitions.


2010 ◽  
Vol 168-169 ◽  
pp. 529-532 ◽  
Author(s):  
Yu.V. Knyazev ◽  
Y.I. Kuz’min ◽  
A.V. Lukoyanov ◽  
Anatoly G. Kuchin

Optical properties of the LaNi5-xCux (x = 0, 0.6, 1, 1.2) compounds were studied. It was shown that substitution of copper for nickel led to noticeable changes in the optical conductivity spectra. Calculations of the electronic structure of compounds with x = 0, 1, 2 were performed using a generalized gradient approximation. The interband optical conductivity of these intermetallics was calculated. The optical ellipsometrical measurements and theoretical calculations testify to the appearance of a broad absorption structure associated with the Cu 3d  Ni 3d electron transitions and increasing with the growth of copper content.


2016 ◽  
Vol 18 (42) ◽  
pp. 29543-29548 ◽  
Author(s):  
S. F. Bychkov ◽  
A. G. Sokolov ◽  
M. P. Popov ◽  
A. P. Nemudry

Within the framework of the itinerant electron model, the dependence of the oxide nonstoichiometry on the oxygen activity was related to the density of electronic states near the Fermi level.


2017 ◽  
Vol 19 (6) ◽  
pp. 4500-4506 ◽  
Author(s):  
A. S. Shkvarin ◽  
Yu. M. Yarmoshenko ◽  
A. I. Merentsov ◽  
Yu. M. Zhukov ◽  
A. A. Titov ◽  
...  

The electronic structure of NixTiSe2 intercalation compounds with disordered and ordered Ni atoms is studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray spectra and density of electronic states.


1997 ◽  
Vol 55 (7) ◽  
pp. 4206-4214 ◽  
Author(s):  
Y. Okimoto ◽  
T. Katsufuji ◽  
T. Ishikawa ◽  
T. Arima ◽  
Y. Tokura

2019 ◽  
Vol 126 (4) ◽  
pp. 432
Author(s):  
Ю.В. Князев ◽  
Ю.И. Кузьмин

AbstractThe optical properties of binary GdFe_2 and LuFe_2 compounds are studied by the ellipsometric method in the 0.22–17 μm spectral range. A number of spectral and electronic characteristics are determined. The experimental dependences of optical conductivity in the light quantum absorption region are interpreted based on previously published calculations of electronic states densities.


1999 ◽  
Vol 60 (1) ◽  
pp. 41-51 ◽  
Author(s):  
Takanori Itoh ◽  
Kazuo Fueki ◽  
Yasumoto Tanaka ◽  
Hideo lhara

2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Dhanabalakrishnan Kovilpalayam Palaniswamy ◽  
Pandiyan Arumugan ◽  
Ravindiran Munusami ◽  
A Chinnasamy ◽  
S. Madhu ◽  
...  

InSb the group III-V semiconductor with narrow band gap is combined with Mn in various concentrations and that InSb–Mn alloy is doped with poly methyl methacrylate (PMMA). The optical properties and electronic structure of ternary InSb–Mn alloy with PMMA are investigated by first principles calculations using the DFT method. Varying Mn concentrations play an important role in the improvement of the absorption coefficient and optical conductivity. It is observed that the band gap of InSb–Mn: PMMA decreases monotonously with the increase in Mn concentration. Optical properties of InSb–Mn: PMMA, such as the optical absorption coefficient and optical conductivity, are greater than those of pure InSb. InSb–Mn: PMMA alloy is doped with PMMA polymer in order to make a thin film as PMMA is a transparent thermoplastic polymer. These results suggest a promising application of InSb–Mn: PMMA thin film in optoelectronics when the InSb doping is 24% with improved conductivity when compared with other doping ratios. This states the optimum doping ratio and the major finding in the carried out research based on modelling and simulation.


2019 ◽  
Vol 20 (2) ◽  
pp. 127-132
Author(s):  
Yu.V. Stadnyk ◽  
V.V. Romaka ◽  
V.A. Romaka ◽  
A.M. Нoryn ◽  
L.P. Romaka ◽  
...  

The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.


Sign in / Sign up

Export Citation Format

Share Document