Особенности механизма диффузии в структуре алюминий-кремний при облучении ее поверхности внеэлектродной плазмой высоковольтного газового разряда
Features of the diffusion mechanism in Al-Si structure when its surface is irradiated by off-electrode plasma of high-voltage gas discharge at discharge current I=50 mA, accelerating voltage U=4 kV and radiation durations 90 s < t ≤ 600 s are investigated. Model for calculating the concentration profiles of aluminum impurity distribution in silicon plate as a function of Al-Si structure irradiation parameters is proposed; corresponding analytical dependences and also good consent of the theory and experiment are obtained. It is shown that the maximum values of diffusant concentration are reached at a penetration depth of electrons into the semiconductor because of forming of vacancies by them in a layer (х ≈ 0.25 μm). Specified is followed by increase at 2-3 orders of coefficient of thermal diffusion.